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600V
N-channel 30A - 600V TO-247 very fast PowerMESH™ IGBT
Datasheet
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Last Updated: 11/01/2008
Pages: 11
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STGW20NC60VD
N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESHTM IGBT
Table 1: General Features
TYPE STGW20NC60VD
s s
Figure 1: Package
IC @100C 30 A
VCES 600 V
VCE(sat) (Max) @25C < 2.5 V
s s
s
s s
OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE LOW ER CRES /CIES RATIO NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION
3 2 1
TO-247 Weight: 4.41gr 0.01 Max Clip Pressure: 150 N/mm2 Figure 2: Internal Schematic Diagram
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency applications.
APPLICATIONS HIGH FREQUENCY INVERTERS s SM PS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UP S s MO TO R DRIVERS
s
Table 2: Order Codes
SALES TYPE STGW20NC60VD MARKING GW20NC60VD PACKAGE TO-247 PACKAGING TUBE
Rev. 4 July 2004 1/11
STGW20NC60VD
Table 3: Absolute Maximum ratings
Symbol VCES V E CR VGE IC IC ICM (1) If PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25C (#) Collector Current (continuous) at 100C (#) Collector Current (pulsed) Diode RMS Forward Current at TC = 25C Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature Value 600 20 20 60 30 100 30 200 1.6 55 to 150 Symbol V V V A A A A W W/C C
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min. Rthj-case Rthj-case Rthj-amb TL Thermal Resistance Junction-case (IGBT) Thermal Resistance Junction-case (Diode) Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) ---Typ. ---300 Max. 0.625 1.5 50 C/W C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: Off
Symbol VBR(CES) ICES Parameter Collectro-Emitter Breakdown Voltage Collector-Emitter Leakage Current (VCE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 1 mA, VGE = 0 VGE = Max Rating Tc=25C Tc=125C VGE = 20 V , VCE = 0 Min. 600 Typ. Max. Unit V
10 1 100
A mA nA
IGES
Table 6: On
Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE= VGE, IC= 250 A VGE= 15 V, IC= 20A, Tj= 25C VGE= 15 V, IC= 20A, Tj= 125C Min. 3.75 1.8 1.7 Typ. Max. 5.75 2.5 Unit V V V
(#) Calculated according to the iterative formula: T T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R ×V (T , I ) THJ C C E SA T (M A X) C C
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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic
Symbol gfs(1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current Test Conditions VCE = 15 V, IC= 20 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 15 2200 225 50 100 16 45 100 140 Max. Unit S pF pF pF nC nC nC A
VCE = 390 V, IC = 20 A, VGE = 15V, (see Figure 21) Vclamp = 480 V , Tj = 150C RG = 10 , VGE= 15V Test Conditions VCC = 390 V, IC = 20 A RG= 3.3, VGE= 15V, Tj= 25C (see Figure 19) VCC = 390 V, IC = 20 A RG= 3.3, VGE= 15V, Tj= 125C (see Figure 19)
Table 8: Switching On
Symbol td(on) tr (di/dt)on Eon (2) td(on) tr (di/dt)on Eon (2) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Min. Typ. 31 11 1600 220 31 11.5 1500 450 Max. Unit ns ns A/s J ns ns A/s J
300
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C)
Table 9: Switching Off
Symbol tr(Voff) td(off) tf Eoff (3) Ets tr(Voff) td(off) tf Eoff (3) Ets Parameter Off Voltage Rise Time Turn-off Delay Time Current Fall Time Turn-off Switching Loss Total Switching Loss Off Voltage Rise Time Turn-off Delay Time Current Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 390 V, IC = 20 A, RGE = 3.3 , VGE = 15 V Tj = 125 C (see Figure 19) Test Conditions Vcc = 390 V, IC = 20 A, RGE = 3.3 , VGE = 15 V TJ = 25 C (see Figure 19) Min. Typ. 28 100 75 330 550 66 150 130 770 1220 450 750 Max. Unit ns ns ns
J J
ns ns ns
J J
(3)Turn-off losses include also the tail of the collector current.
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STGW20NC60VD
Table 10: Collector-Emitter Diode
Symbol Vf trr ta Qrr Irrm S trr ta Qrr Irrm S Parameter Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Test Conditions If = 10 A If = 10 A, Tj = 125 C If = 20 A ,VR = 40 V, Tj = 25C, di/dt = 100 A/s (see Figure 22) Min. Typ. 1.3 1 44 32 66 3 0.375 88 56 237 5.4 0.57 Max. 2.0 Unit V V ns ns nC A ns ns nC A
If = 20 A ,VR = 40 V, Tj =125C, di/dt = 100 A/s (see Figure 22)
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ST GW20N C 60VD
Figure 3: Output Characteristics Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Temp e rat u re
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Normalized Gate Threshold vs Temp e rat u re
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STGW20NC60VD
Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Capacitance Variations
Figure 13: Total Switching Losses vs Temperature
Figure 11: Total Switching Losses vs Gate Resistance
Figure 14: Total Switching Losses vs Collector C u rren t
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ST GW20N C 60VD
Figure 15: Thermal Impedance Figure 18: Ic vs Frequency
Figure 16: Turn-Off SOA For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) 1) The maximum power dissipation is limited by maximum junction to case thermal resistance: PD = T / RTHJ-C considering T = TJ - TC = 125 C- 75 C = 50C 2) The conduction losses are: PC = IC * VCE(SAT) * with 50% of duty cycle, VCESAT typical value @ 125 C . 3) Power dissipation during ON & OFF commutations is due to the switching frequency: PSW = (EON + EOFF) * freq. 4) Typical values @ 125C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 3.3 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3).
Figure 17: Emitter-Collector Diode Characteri st i cs
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STGW20NC60VD
Figure 19: Test Circuit for Inductive Load Switching Figure 21: Gate Charge Test Circuit
Figure 20: Switching Waveforms
Figure 22: Diode Recovery Times Waveform
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ST GW20N C 60VD
Table 11: Revision History
Date 12-July-2004 Revision 4 Stylesheet update. Added Max Values see Table 8 and 9 Added Figure 22 Description of Changes
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STGW20NC60VD
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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ST GW20N C 60VD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
11/11
Document Number: 9983
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