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STMicroelectronics Debuts World's Most Advanced Smart Card Memory Technology |
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Geneva, November 5, 2002 - STMicroelectronics (NYSE: STM), the world's third largest semiconductor supplier, today announced the world's most advanced smart card memory technology, Page Flash, a high performance Flash memory technology that will in the future, remove the need for EEPROM (Electrically Erasable Programmable Read-Only Memory) in high memory density smart card chips. A smart card technology demonstrator, which combines a sophisticated 32-bit secure microcontroller with 1Mbyte of Flash memory technology, is being used to validate the concept. The demonstrator, developed within the MEDEA+ project Esp@ss-is and codenamed ST22FJ1M, represents a quantum leap in smart card technology by adding Page Flash and Standard Flash memory to ST's proven 32-bit SmartJTM platform. The device offers a large (768Kbytes) User Flash memory for storing program code and 256Kbytes of Page Flash memory that replaces the traditional EEPROM. A Flash Loader enables application code to be loaded or updated, while an additional 128Kbytes of User ROM is available to hold fixed routine libraries. Storing application code in Flash rather than Read-Only Memory (ROM) greatly increases the flexibility of the card by allowing personalization of generic products, software upgrades and post-issuance downloads. "EEPROM technology played a crucial role in the growth of the smart card market but it is reaching the limit of its scalability. Our patented Page Flash technology paves the way for the next generation of smart card devices built in 0.13-micron technology and beyond, " said Maurizio Felici, Group Vice-President and General Manager of ST's Smart Card Division. EEPROM is widely used in smart card chips because it offers fast program/erase speeds (a few milliseconds) and excellent granularity i.e. a single data byte can be altered without affecting any other data stored in the EEPROM. However, EEPROM technology requires a relatively high voltage (18V) to be applied during the write process. As each new technology generation reduces the size of the transistors used to make the memory, it becomes increasingly difficult to design devices that can withstand 18V and therefore scalability of EEPROM becomes limited. Thus, while EEPROM sets the performance reference for today's applications and will remain important for low memory density products, it will not be suitable for high density product generations beyond 0.18-micron. Page Flash is a derivative of Standard Flash technology, in which ST is an established world leader*, both in stand-alone devices and in delivering System-on-Chip (SoC) solutions containing embedded Flash memory. Standard Flash is ideal for holding application program code: it offers the highest density, the ability to erase large sectors in around 1s, fast programming (~10µs), and an endurance of over 10K program/erase cycles. Page Flash offers the same fast programming time as Standard Flash but also allows individual data words (32-bits) to be erased in a few milliseconds and rewritten more than 100K times, thereby providing all the functional benefits of EEPROM in a future-proof technology. The two types of Flash memory can be mixed on the same silicon chip at no additional cost and without any modification to the standard Flash manufacturing process. "The ST22FJ1M demonstrator once again illustrates the strength of our modular platform strategy, which allows us to seamlessly integrate new technologies such as Ferroelectric memory (FeRAM) and Page Flash into tried and tested smart card platforms. ST is the only company that is a world leader in both smart card chips and Flash memory and this unique synthesis further reinforces our technology leadership in the smart card arena", said Maurizio Felici. The Flash/Page Flash memories open up a host of open platform opportunities. In the mobile market, the increased memory will facilitate the creation of new applications such as video services and mobile imaging (MMS) and full feature 3G/4G operation. SmartJTM is placed to become the standard platform for Mobile Network Access and for Secure Personal Portable Objects. Other applications areas include high-end Internet access and Pay TV solutions. At the beginning of 2003, the concepts developed and validated on the ST22FJ1M demonstrator will be used to create a range of products based upon the ST22 core with Flash/Page Flash. About STMicroelectronics STMicroelectronics, the world's third largest semiconductor company, is a global leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence markets. The Company's shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange. In 2001, the Company's net revenues were $6.36 billion and net earnings were $257.1 million. Further information on ST can be found at http://www.st.com. * According to independent market analysts, Gartner Dataquest, ST was the world's fourth largest supplier of Flash memories in 2001. Currently, ST is one of only two companies worldwide to have introduced NOR-based Flash memories made in 0.13-micron technology. |
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