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STMicroelectronics Breaks the Rules with Smaller and More Robust Power Devices | | |
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 Geneva,
October 4, 2004 - STMicroelectronics (NYSE: STM), one of the world's
largest semiconductor manufacturers, has reinforced its leadership in
smart power technologies with the introduction of a new generation of
its proprietary
VIPowerTM (Vertical Intelligent Power) family of technologies.
Called M0-5, the new technology employs a patented control strategy that
allows the Company to significantly reduce chip and package sizes while
delivering the same power level as currently available devices, and at
the same time dramatically increasing robustness. The new technology is
particularly suitable for automotive applications, which are characterized
by a demand for smaller, lighter and less expensive modules. The M0-5
technology provides devices that must operate robustly under highly challenging
physical and electrical conditions.ST's new generation of automotive smart power technology is based on a thorough analysis of the physical mechanisms that can lead to device failure during abnormal operating conditions such as temporary or permanent short circuits and the fast thermal transients that can occur when a circuit is first switched on. The Company developed innovative control strategies that reduce the effect of these stresses on the most vulnerable elements of the circuit through active power limitation. In this way, while the die size (and hence the package size, with consequent decrease in system cost) required to implement a given power-handling specification has been reduced by an average of about 40%, the robustness of the devices has been enormously increased. "This is the most significant breakthrough in automotive semiconductor technology in many years," said Domenico Billè, VIPower & RF Division General Manager. "Historically, reducing the physical dimensions of the power transistors has always made them more susceptible to the kind of stresses that are inevitably found in real automotive applications. Now, through the embedding of novel active protection circuits, our new devices are not only more compact and cost-effective but also much more resistant to the effects of the anomalous operating conditions encountered in automotive applications." Like all of ST's VIPower technologies, the new M0-5 technology is based on vertical current flow, i.e. the high current (which typically drives lamps, motors, and solenoids in the car) flows vertically between the top and bottom of the silicon chip through high-performance power-transistor configurations, while the integrated control and diagnostic circuitry is formed horizontally on a top layer of the chip. This proven device architecture allows VIPower devices to achieve power-handling performances equal to or better than those of discrete devices while simultaneously allowing the integration of sophisticated control and diagnostic circuitry. ST's new technology combines advances in several different areas of chip and package design. In addition to the novel control strategy, which limits power dissipation under a variety of operating conditions, and the improved EMC (Electromagnetic Compatibility) characteristics, the new technology exhibits greatly reduced standby currents, down from 12-microamps per chip to only 2-microamps per chip. ST has designed a family of new high-side drivers based on the new technology. The new product family includes single, dual, and quad drivers with RDS(ON) values from 2 to 160mOhm. Samples will be available to automotive customers from Q4 2004. M0-5 DATASHEETS: VN5016AJ-E VND5012AK-E VNQ5050K-E About STMicroelectronics STMicroelectronics N.V. is a global leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence markets. The Company's shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange (Borsa Italiana). In 2003, the Company's net revenues were $7.24 billion and net earnings were $253 million. Further information on ST can be found at www.st.com. Notes for Editors * "Intelligent" current limitation is crucial; its value must be high during inrush conditions and low during overload conditions reducing the stress on the silicon and increasing the robustness of the devices. * By limiting the maximum dissipated power, the stress formerly imposed by FTT (Fast Thermal Transients) is removed in M0-5 devices. * The control strategy protects the devices for car battery voltages up to 36V. |
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