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STC03DE170HV, STC03DE170HP

Hybrid emitter switched bipolar transistors
Datasheet | Orderable Products | Features and Description | Documentation
 
Datasheet
Reference Filesize Pages Last Updated
STC03DE170HV 284 KB 9 02/10/2006
STC03DE170HP 315 KB 9 02/10/2006
 
Orderable Products
Device Status RoHS Package Purchase
STC03DE170HV
Active Yes TO247-4L HV
STC03DE170HP Active Yes TO247-4L HP
 
 
Features and Description
Low equivalent ON resistance
Very fast-switching, up to 150 kHz
Squared RBSOA, up to 1700 V
Very low CISS driven by RG = 47 Ω
In compliance with the 2002/93/EC European Directive
 
Key parameters:
Part Number
RCS(ON) Δ[Ω]
VCS(ON)Δ [V]
tfΔ [ns]
PTOT [W]
Package
STC03DE170HV
0.55
1
14
100
TO247-4L HV
STC03DE170HP
35.5
TO247-4L HP*
Δ VCS=1 V, IC=1.8 A, IB=0.36 A
* Isolated
 
The STC03DE170HV and STC03DE170HP are high-voltage, 3 A hybrid emitter switched bipolar transistors (ESBTs) designed for use in 3-phase auxiliary switched mode power supplies. As members of ST’s family of hybrid ESBTs, they combine high-voltage bipolar and low-voltage MOSFET technologies in a single package. This results in reduced conduction and output losses, driving power and costs, while maximizing switching frequency and output power.

Another advantage of the STC03DE170HV/HP is its higher breakdown voltage, which allows designs to operate with a higher flyback voltage and, therefore, a higher duty cycle. A higher duty cycle, in turn, allows a power supply to handle higher power or accept a wider input-voltage range.

 
ESBT: STC03DE170
Three-phase auxiliary switch-mode power supply basic schematic diagram
Using the three-phase auxiliary power supply (above) as a reference circuit, both an STC03DE170HV and a popular 1500 V MOSFET were tested as primary switches. The following table compares the parameters of both devices:
 
Part Number
BV [kV]
Ron @ 1.5 A
[Ω]
Von @ 1.5A
[V]
tf
[ns]
High runner
MOSFET
1.5
12
18
60
STC03DE170HV
1.7
0.55
0.9
14
Both theoretical and practical analyses of their performance prove the STC03DE170HV to have a clear advantage over the MOSFET.
 
ESBT: STC03DE170
 
ESBT STC03DE170 waveforms in a flyback converter
 
ESBT: STC03DE170
 
Power MOSFET 2SK1317 waveforms in a flyback converter

 
Documentation
Application Notes
Reference Title
AN1699 Efficient driving network for ESBT to reduce the dynamic VCE(sat) and enhance switching performances
(Sept 2005, 216 KB) Download
   
Promotional Documents
Reference Title
SGESBT0707
ESBT® Emitter Switched Bipolar Transistors
(July 2007, 395 KB) Download