ESBT: STE50DE100
Hybrid Emitter Switched Bipolar Transistor In ISOTOP

STE50DE100 Product Page

ST's new family of Emitter Switched Bipolar Transistors is being launched with the introduction of the high power STE50DE100 housed in the screw mounted ISOTOP package. It is aimed primarily at induction heating, welding equipment and high-end PFCs for audio amplifiers.
With this device the power level has been substantially shifted to as high as 2.5kW. Enlarging ST's power actuator product range means customers will be able to convert existing problems into cost-effective, high performance solutions.

It is well known that ST has long been producing state-of-the-art devices with both these technologies. Many patents have been released in the past years and a constantly increasing market share confirms ST’s position amongst the transistor manufacturer leaders.
With the Emitter Switching technology / topology, a new family of devices combining all the strengths and eliminating the drawbacks of both Bipolar and MOSFET technologies, will be on the market.

For further information on the ESBT topology see AN1699.

Why Use The ESBT Technology/Topology?

Bipolar transistors have historically been, a power actuator for switching applications, working at low frequencies (<70kHz).

Benefits:

Low VCEsat (low conduction losses)

Drawbacks:

	Slow switching speed
	High current (Power) output needed from the driver (PWM)
	Difficult fine tuning driving circuit

Power MOSFETs in contrast, are well known for use in high frequency power actuators.

Benefits:

Low power needed from the driver (PWM)

Drawbacks:

	Higher cost technology (compared to Bipolar)
	High power consumption during conduction (High RDS(on) High VDS(on))

Safe Switching: Square RBSOA

Some of the tested application topologies could make the power switch operate in hard switching conditions, with possible critical cross points. This requirement does not match with the classical bipolar RBSOA. Thanks to the topology itself and the way in which the device is realized, it has surprisingly been possible to achieve a square RBSOA, which greatly improves the devices performance in terms of safe switching.

Application Example

The very strict electrical requirements of induction heating are easily met by the STE50DE100.
Below you can find the basic induction heating block schematic, together with a single switch common topology.

Critical Working Conditions

As further proof of the excellent performance of the STE50DE100, you can refer to the following waveforms showing the device working in all the critical conditions (turn-on, turn-off and conduction).

Part - Numbering System

A new dedicated nomenclature is used to define each product. It also gives information on technologies and packages.
From the nomenclature, it is evident that the STE50DE100 is a “Hybrid Bipolar plus MOSFET” in Emitter Switching configuration, housed in an ISOTOP package, able to withstand collector currents up to 50A and Drop voltages up to 1000V.