BUL741
Product Page |
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The introduction of BUL741 will further
enlarge ST’s wide product range
for HF ballast applications, offering
the best cost competitive product for
low power solutions. The new BUL741
has been specifically designed to fit
electronic ballasts of up to 2 x 32Watt
in 120Volt push pull configuration and
277Volt half bridge in current FED topology. |
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Manufactured using multi-epitaxial planar technology
with proprietary cellular emitter layout, the
BUL741 is able to ensure the high current capability
needed in half bridge current fed topologies
and at the same time displaying outstanding
dynamic performance especially in turn off.
Additionally, an intermediate layer with increased
thickness has been used to enhance the base
collector junction breakdown capability (with
the junction JBE reverse biased), allowing the
bipolar to sustain high current levels in avalanche
conditions.
 High
breakdown voltage, BVces = 1050V
Fast
and tight switching times
Avalanche
proof, Ear = 4mJ with L = 2mH
Available
in popular TO-220, DPAK and IPAK packages
The multi-epitaxial planar technology, in addition
to a specific base profile, helps to reduce
the fall time and consequently the turn-off
losses that are the most significant switching
losses in standard operative conditions. An
optimized control of the life time of the minority
carriers brings tight dynamic parameters, leading
to an increased total system efficiency in open
load and short circuit operative conditions.
The increased breakdown of the B-C junction
means the bipolar device is able to sustain
stressful tests like the “arching test”.
The sudden change between open load and short
circuit causes current spikes during the off-phase
leading the BC junction into avalanche condition.
The BUL741 can be used in 2x32W lamp ballast
circuits, with high cost/benefit ratio. The
new BUL741 completes ST’s product range
dedicated to the universal input half bridge
in current fed topologies.
|
Power Bipolar For Universal Input
Topologies |
| Part
number |
Icn
[A] |
Power
(up to)
[W] |
Package |
|
2.5 |
2
x 32 |
TO-220,
DPAK, IPAK |
|
3 |
3
x 32 |
DPAK |
|
4 |
4
x 32 |
TO-220,
DPAK, IPAK |
|
5 |
140 |
TO-220,
TO-220FP |
BUL741 in avalanche condition during
the arching test.
The B-C junction acts as a zener diode,
stopping the
rise of VCE above 1050V, avoiding device
failure
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