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Dual NPN-PNP Bipolar transistor
for Power MOSFET and IGBT drivers

STS01DTP06 Product Page

Following the market demand for optimized electronic solutions, by improving circuit efficiency, saving the space and reducing the component count on the board, ST is introducing a new series of dual bipolar transistors in a single package suitable for driving functions. The first device of this new series is the STS01DTP06 housed in SMD dual island SO-8 package.

 
STS01DTP06

Functional Description of STS01DTP06


The STS01DTP06 is a hybrid complementary NPN and PNP bipolar transistor manufactured using the latest low voltage planar technology.
Extremely efficient performance is obtained by combining high pulse current, excellent gain and fast speed, resulting in low losses in high frequency applications. In fact, the STS01DTP06 offers a 30V NPN and PNP combination supporting a continuous collector current of 3A and the minimum gain of the two transistors is 100 at 1A collector current. These features make the new device ideal for switching circuits including converters, motor drivers, relay and solenoid drivers and buffers.
In these applications a MOSFET or an IGBT is used as a switch, therefore it is necessary that the gate driver circuitry charges and discharges the gate capacitance as rapidly as possible. The output stages of the switch mode controller ICs are rarely able to drive these power switches adequately. Consequently, the STS01DTP06 can be used in push-pull or totem pole circuit topologies in order to provide an interface between the logic controller and the switch.
The transistor elements are fully independent so that higher assembly flexibility is guaranteed and any possible interference between them is avoided.

STS01DTP06
Typical push-pull circuit topology

Package


Thanks to its reduced dimensions, cost structure and good thermal performance the lead-free SO-8 surface mounting package is ideal for this product tailored for buffer applications.

Features of STS01DTP06


High efficiency
Simplified circuit design
Reduced board space
Reduced component count

Applications of STS01DTP06


Push-pull or totem pole configuration
MOSFET and IGBT gate driving
Motor, relay and solenoid driving
Buffer

Main Characteristics of STS01DTP06


Type VCEO
[V]
IC
[A]
hFE @
IC =(-)1A
VCE =(-) 2V
VCE(sat) max
@ IC =(-)1A
IB =(-)10mA
Package
NPN 30 3 >100 1 SO-8
PNP -30 -3 > 100 -1

(-): PNP transistor