1,500V Power MOSFETs STx4N150: Beyond the 1000V frontline

STx4N150 Product Selector ST is offering its first 1,500V Power MOSFET based on the well consolidated High Voltage Mesh Overlay technology. The strengthened layout coupled with new proprietary edge termination structure give the lowest RDS(on) per area in this voltage range, unrivalled gate charge and switching characteristics as shown in the following table.

Part number	VDSS [V]	RDS(on) @ 10V [Ohm]	QG [nC]	Package
STP4N150	1500	<7	30	TO-220
STW4N150	1500	<7	30	TO-247
STFV4N150	1500	<7	30	TO-220FH

These devices are available either in standard TO-220 and TO-247 packages, or in the fully isolated plastic TO-220FH package, where the creepage distance between each lead and between the leads and the heatsink has been increased ( >4mm). This increase means the device is able to meet all the severe safety norms applicable to very high voltage applications.



3-phase auxiliary power supply schematic

Typical R_DS(on) = 5 Ohm
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitances
High speed switching

Three phase auxiliary SMPS
Internal cardioverter defribillator (ICD)
Motor drives
HV piezoelectric driver class B amplifier

In order to investigate its electrical and thermal performance the STP4N150 has been tested on a 45W 3-phase auxiliary power supply based on a flyback converter topology.
The analysis was performed considering the maximum output load applied (45W) and considering two different input voltage conditions: 290Vac and 470Vac .
All measurements were performed at ambient temperature with the devices mounted on a heatsink in free air.

The main electrical parameters and thermal results of STP4N150 at 290Vac and 470Vac are shown in the table below.