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ST has recently introduced the new 650 V MDmesh II and the 800 V
MDmesh I series in response to the increasing demand for higher
efficiency adapters in the 75 W up to 230 W power ranges.
The types of Power MOSFETs chosen by adapter designers differentiate
themselves in breakdown voltage and maximum on-resistance depending
on the topology and the range of power involved. In flyback single
switch adapters designers may use 600 V to 800 V Power MOSFETs.
|
Most popular topologies
used |
|
Type |
Power
range
[W]
|
Topology
|
Operating
mode
|
Voltage
[V] |
Low-power adapters |
up to 50 |
Flyback |
DCM |
600 / 800 |
Medium-power
adapters |
up to 75 |
Flyback |
QR |
650 / 800 |
up to 120 |
Active clamp
flyback |
CCM |
650 / 800 |
High-power
adapters |
up to
230
and over |
Half bridge |
PWM / ZVS |
500 / 600 |
Half
bridge |
Resonant
LLC |
500 / 600 |
Depending on the winding ratio of the transformer, and the voltage
and current capability of the diode used on the secondary side,
designers may improve the efficiency of their applications by using
a 650 V Power MOSFET instead of a 600 V device.
When designers require higher breakdown voltage levels, the 800
V MDmesh devices are the right choice for the most demanding high-efficiency
adapters. In fact, thanks to STs' Super-junction technology, 800
V devices greatly reduce switching losses.
|
650 V MDmesh II
key features |
|
Standard packages TO-220, D2PAK, I2PAK, TO-220FP
and TO-247
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitance
Very high-speed switching
Extreme dv/dt rating
Exceptionally low RDS(on)
650 V MDmesh II
main benefits |
The range of VGS used to drive the 650 V devices has been lowered
(threshold voltage range Vth: 2 V < Vth < 4 V) keeping the
same threshold spread (2 V), ensuring high noise immunity that prevents
the circuit from accidentally switching. An energy-optimized driver
circuit enables the Power MOSFET to drive higher currents at a lower
voltage gate threshold.
Typical adapter schematic using a DC-DC converter in flyback
topology
650 V and 800 V
MDmesh product range |
Part
number
|
BVDSS
|
RDS(on)
max
|
ID
(cont)
|
Package |
|
650 V |
480 mΩ
|
9 A
|
DPAK, IPAK,
D2PAK, TO-220/FP |
|
380 mΩ |
12 A |
D2PAK, I2PAK,
TO-220/FP, TO-247
|
|
270 mΩ
|
15.5 A
|
|
190 mΩ
|
19 A
|
|
800
V
|
1.05 Ω
|
6.5 A
|
TO-220/FP, DPAK,
IPAK
|
|
0.4 Ω
|
11 A
|
TO-220/FP, D2PAK,
TO-247
|
Note: 650 V devices = MDmesh II technology, 800 V devices =
MDmesh I
800 V MDmesh I Main
benefits |
Thanks to its extremely low on-resistance per area, the 800 V device
is recommended for PFC in lighting, adapters and most high-efficiency
converters for switching applications. The wide variety of packages
allow designers maximum flexibility in their applications.
800 V MDmesh I key
features |
100 % avalanche tested
3 V < Vth < 5 V
Low input capacitance
Low gate charge
Low gate input resistance
|
|
|
|
