| Higher frequencies and lower losses in DC-DC converters |
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 The FDmesh II series belongs to the second generation of MDmesh technology. This associates a new vertical structure with the company’s strip layout, and combines all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. Their competitive conduction, switching performances and faster diode recovery phase, make them particularly suited for hard switching full-bridge topologies in the primary side sections of SMPSs for servers, and also for solar inverters and HID lighting applications.
FDmesh II vs. MDmesh II: Diode reverse recovery current |
Until now the MDmesh II family has covered the most common SMPS topologies, but now with the new high-current devices, the latest high power SMPS topologies used in servers and for PV solar converters are also targeted.
There are two main functional blocks in SMPS for servers in which high-current devices with more than 20 A are needed: the PFC and the main converter:
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600 V MDmesh™ II MOSFETs are usually suitable for the PFC section and the primary side of the main converter that is commonly a resonant LLC converter, this is a leading topology in terms of higher efficiency |
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600 V FDmesh II version is usually adopted in the primary side when a hard switching
full-bridge topology is adopted and an intrinsic fast body-diode has to be used in favor of the
freewheeling current. In inverters for solar power conversion, the 600 V, 60 mΩ, STW55NM60ND, has been tested in a DC-DC converter of a PHASE SHIFT ZVT providing almost 95% efficiency, thanks to the extremely low RDS(on) x area (45%
less than previous MDmesh devices) |
FDmesh II vs. MDmesh II: Diode reverse recovery current |
Id: 20 A/div Time: 200 ns/div
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| Datasheets and product selector |
 FDmesh II |
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| Features |
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The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 (only the STW55NM60ND) |
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100% avalanche tested |
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Extremely low input and output capacitances |
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Reduced recovery time (Trr) and charge (Qrr) |
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Extremely High dynamic dv/dt (40V/ns) |
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Gate charge minimized |
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| Benefits |
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Low conduction losses |
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Low switching losses and high switching speed |
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Reduced driving losses |
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Fast diode recovery phase |
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Avalanche and cross-conduction phenomena robustness |
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| Applications |
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SMPSs for servers |
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Solar inverters |
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HID lighting |
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| Promotional documents |
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Reference |
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| Power MOSFETs selection guide |
SGPMOS1107 |
Download (Oct. 2007, 893 Kb) |
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