LOW PROFILE MOSFETs FOR ADAPTORS High performance SuperMESH in I2SPAK & TO-220
Over the years power handling capability has been crucial in the evolution of SMPS. In order to meet the requirements of more compactness, higher power and lower profiles, numerous product developments and package innovations have been seen.
Since efficiency, reliability and cost have always played a binding role in all SMPS designs, ST is expanding its SuperMESH HV devices in both TO-220 and I2SPAK packages to meet these requirements. It features SuperMESH’s ultimate RDS(on) values which are on a par, or even better than the best TO-220 competition equivalents in the standard technology arena.
The tables above and below show RDS(on) values of our SuperMESH devices.
SuperMESH Vs Competition
Parameter
Toshiba
Fairchild
Fuji
ST
BVDSS (V)
500
500
500
500
RDS(on) (Ohm)
0.52
0.265
0.38
0.27
Qg typ (nC)
42
42
32
85
BVDSS (V)
600
600
600
600
RDS(on) (Ohm)
0.75
0.49
0.54
0.42
Qg typ (nC)
45
36
33
86
BVDSS (V)
-
650
-
650
RDS(on) (Ohm)
-
1.4
-
0.50
Qg typ (nC)
-
2.8
-
86
BVDSS (V)
800
800
800
800
RDS(on) (Ohm)
2.2
1.5
1.9
0.75
Qg typ (nC)
34
40
25
87
I2SPAK Versus TO-220/FP
Until recently the TO-220/FP was the preferred package for Power MOSFETs in adaptor applications. However, due to the high power density / lower profile adaptor requirements, designers are now looking for alternative solutions. Hence, the new I2SPAK offers a lower profile feature for the designer whenever height becomes a constraint.
I2SPAK Benefits
I2SPAK height is ~4.93mm less than TO-220’s; I2SPAK has short leads, thus lead trimming process is not required; I2SPAK allows the clip to assure an evenly distributed pressure with the external heatsink that translates into a better thermal contact; I2SPAK could become “the package” for high power density / low profile adaptors.