Company
ST Home | Transistors | Power MOSFETs | Related Information | SAFeFET - STZ150NF55T

SAFeFET - STZ150NF55T
A new generation of power MOSFETs with simple added features

SAFeFET is a new generation of Power MOSFETs that combine the performance of ST’s STripFET technology with “Simple Added Features”. The resulting cost effective devices display embedded features such as current or temperature sensing and the possibility to have temperature or current processing. The added functions are obtained thanks to the combination of:

Thermal (poly diode) sensors
Current (split-strip based) sensors
N-channel signal Power MOSFET
Poly resistors
Poly diodes

  
SAFeFET - STZ150NF55T


STZ150NF55T
The first device in the SAFeFET series is the STZ150NF55T housed in P2PAK. For this device a chain of electrically isolated polysilicon diodes are integrated into the silicon structure with the anode and cathode termination available for external measurements. The voltage drop on the polysilicon diodes changes according to its negative temperature coefficient, consequently, by measuring Vf, the diode’s junction temperature can be predicted. Since the diodes are embedded into the die, their junction temperature is very close to the junction temperature of the main MOSFET.
This simple, cost effective way of building temperature sensing devices eliminates the need for other external components. ESD protection is also by the integration of a gate-to-source diode.


SAFeFET - STZ150NF55T
Typical derating curve for polysilicon diodes

STZ150NF55T Main Electrical Characteristics
P / N
BVDSS
[V] 		Rth j-c
max
[°C / W] 		RDS(on)
@ 10V
[mOhm]
STZ150NF55T
 55 0.6 9


Applications
Since the SAFeFET devices can function in both linear and switching mode, they are ideal for a large range of general purpose applications belonging to both the industrial and automotive market.


Features
Integrated temperature sensing
Integrated ESD protection
175°C operating temperature
Standard threshold level
Standard P2PAK package for SMD
100% avalanche tested
P.A.T. (Part Average Testing) applied at wafer probing


Built-In Added Features
The main benefits of this new MOSFET series is the possibility to offer single integrated solutions in order to achieve real cost effective systems.
The built-in features are:
Current limitation
Temperature sensing
Thermal shut-down
Drain to Gate active clamp
Gate to source ESD protection

Related Topics
Product Selector and Datasheets
Power MOSFETs
Support
Contact Technical Support
Lead Free/RoHS
Application Notes
PSpice Models