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STB200NF04 The lowest RDS(ON) for 40V MOSFETs
with standard threshold voltage
 STB200NF04 Product Page

A new MOSFET with standard threshold voltage is now available for the 12V Automotive environment and also for DC-DC conversion applications. This device shows the lowest RDS(on) achievable in TO-220 and/or D2PAK. The STB200NF04 belongs to the latest low voltage automotive-graded technology already qualified by some of the most important automotive customers worldwide. The following table shows the main electrical characteristics of the new device; such features also apply to I2PAK and TO-220.

A new 30V device with a standard threshold voltage, the STB240NF03T4, is now being introduced to our range of automotive devices. This device shows a typical RDS(on) of only 2mOhm at 10V gate source voltage, achieving the lowest RDS(on) for ST’s 30V devices.

STB200NF04

P / N

BVDSS

[V]
RTHJ-C
max
[°C/W]
RDS(on)
@10V
[mOhm]
40
0.46
3.7

Applications & Features of STB200NF04


High current switching applications:
  - E.P.A.S (Electric Power Assisted    Steering);
  - Integrated Starter-Alternator;
  - Electronic suspension;
  - Motor control;
  - DC / DC Converters.

175°C operating temperature;
Standard VGS(th) values;
Avalanche rated;
Very low RTHj-c values;
Up to 120A DC operations.

What’s New About STB200NF04?
The silicon line of the STB200NF04 is processed using the latest improvements introduced to minimize the resistive “passive components” of the STripFET III devices:

Low substrate resistivity; Lower wafer thickness.

Low Substrate Resistivity
The contribution to the final RDS(on) value, for 20V to 40V devices, is normally in the range from 10% to 15% maximum. Thus the impact on the total RDS(on) reduction due to the lower resistivity substrates seems to be negligible, but we have to consider that for these devices a reduction of fractions of milliohms has a big impact on the total RDS(on) value. This substrate has already been qualified due to its utilization in combination with the STripFET III technology.

Internal MOSFET structure
B200NF04

Low Substrate Resistivity
The wafer thickness contribution to the final RDS(on) value is also in the range from 10% to 20%. Now the impact is not only on the RDS(on) itself, but also on the thermal resistance RTHj-c.
Measured values allow a maximum value of 0.46 °C/Ohm to be guaranteed. Together the reduced die thickness and a silicon area of 29 mm2 yield an excellent thermal behaviour.

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