Product Pages:  STD65N55F3
STD60N55F3
Following the recent introduction of the STB180N55F3
and STB185N55F3,
ST has enlarged its range of devices designed in the
new STripFET III technology. The new STD65N55F3 and
STD60N55F3 compete well against the best industry technologies
to achieve one of the lowest R DS(on) values
in DPAK. |
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Instead of generating multi-application
devices, the individual requirements of
the automotive and industrial segments are
met in separate components. Consequently
the industrial market is the main target
for the STD60N55F3, while the STD65N55F3
has been developed for harsh automotive
applications, and is fully compliant to
all of ST's strict automotive rules.
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High current switching applications |
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DC / DC converters |
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Wiping systems |
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PWM motion control |
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PWM FAN control |
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Diesel glow plug |
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| "N...F3" Series Power MOSFETs
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The 55V "N...F3" series Power MOSFET comes
from the Multi-Drain approach now applied to low voltage
technology in order to significantly reduce the RDS(on)
per area.
The RDS(on) per area for these new "N...F3"
series Power MOSFETs is about 40% lower than that of the
previous "NF" series, as already seen for the
first devices housed in D2PAK, and TO-220. In fact, the
"N...F3" series provides the same RDS(on)
value with about 40% less silicon area.
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175°C operating temperature |
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Standard threshold drive |
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Typical RDS(on) in the range of 6.5mOhm. |
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100% avalanche rated tested, either at wafer level or finished parts |
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P.A.T. (Part Average Testing) applied during
wafer probing for the STD65N55F3. |
| Electrical Characteristics |
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Part number |
V(BR)DSS
[V] |
RDS(on) max
@ 10V
[mOhm] |
RTHJ-C
[°C/W] |
ID
[A] |
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STD65N55F3
STD60N55F3* |
55 |
8.5 |
1.36 |
80 |
* Also availalble in IPAK, D²PAK, TO-220, TO-220FP
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| Both STD65N55F3 and STD60N55F3 have a lower
gate charge value compared to STD60NF06, the
equivalent device made with standard STripFET
II technology. |
Gate charge improvement of the new MDmesh low voltage
technology compared to the previous STripFET II technology
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| The new devices also have a QGD / QGS ratio about three times lower than that of the “NF” series. This is important for minimizing cross-conduction power losses due to shoot-through, mainly in DC-DC converters and in full-bridge motion control applications. |
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