Product Pages: 
STP60NS04ZB STP80NS04ZB
Based on the well proven Mesh Overlay Strip MOSFET process, this latest versions of the “NS” series have achieved excellent performance in terms of ruggedness and thermal behaviour, mainly due to the use of:
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More stable dielectric component |
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Thicker gate oxide (575 ) |
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Integrated gate resistance |
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Die passivation |
These changes and the very simple “diffusion process” allow very rugged MOSFETs to be available at a very competitive price.
In particular the high gate oxide thickness and the built-in zener diodes ensure exceptional robustness against voltage spikes wherever they occur.
It is also possible to withstand repetitive inductive switching currents avoiding operation in breakdown mode.
An integrated gate series resistance allows the devices to safely operate in parallel configuration. This means less stress is put on the device improving its reliability and thus the life of the whole application.
The impressive amount of data collected and analysed for these devices proves that the “NS” series can easily withstand all the harsh automotive environments where such devices operate.
