STV300NH02L
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Power system designers are continuously searching for higher operating
efficiency and performance for their applications. ST is meeting
their needs by introducing a new Power MOSFET designed to reduce
losses in secondary rectification, as well as in the OR-ing function.
The STV300NH02L is a 20V N-channel low voltage, high current,
very low-on resistance Power MOSFET, which benefits from the latest
advanced design rules of ST’s proprietary STripFET™
technology. Housed in PowerSO-10™, the STV300NH02L has benefited
from the most recent technology innovations in ribbon bonding,
making it suitable for the most demanding high current OR-ing
applications on the market today. |
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Features of the STV300NH02L |
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RDS(on) industry benchmark (0.7mOhm
typ)
Very low drop OR-ing Power MOSFET
High current capability
Low threshold device
Innovative ribbon bonding
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Electrical Characteristics |
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| Part
number |
BV
[V] |
ID
[A] |
RDS(on)
max @
10V[mOhm] |
Package |
| |
24 |
300 |
<1 |
PowerSO-10 |
Innovative wire bonding of PowerSO-10
The STV300NH02L is particularly suited to server power supplies, targeting
the following range of applications in the industrial market:
OR-ing
DC-DC converters
The innovative PowerSO-10 ribbon package distinguishes
itself from other Power MOSFETs, in its extremely
low on-resistance, which:
Greatly reduces the losses of the OR-ing function
Boosts
efficiency in server power supplies, which are used in parallel redundancy
to ensure system reliability (more than 99%)
High protection in short circuit conditions
(turnoff typically 1.37ms at 12.7A OR-ing current,and
25.7 load current)
DC/DC converter efficiency vs load current (efficiency of the system
during power transfer from output power supply to load system)
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