* MODELLING FOR STB12NM50T4
.SUBCKT STB12NM50T4 1 2 3
LG 2 4  7.5E-09
LS 12 3 7.5E-09
LD 6 1  4.5E-09
RG 4 5  1.419
RS 9 12 0.149E-01
RD 7 6  0.136
RJ 8 7  0.667E-01
CGS 5 9   0.879E-09
CGD 7 10  0.981E-09
CK  11 7  0.206E-10
DGD 11 7 DGD
DBS 12 6 DBS
DBD  9 7 DBD
MOS  13 5 9 9 MOS L=1u W=1u
E1  10 5 101 0 1
E2  11 5 102 0 1
E3  8 13 POLY(2) 6 8 6 12 0 0 0 0  0.171
G1  0 100 7 5 1u
D1  100 101  DID
D2  102 100  DID
R1  101 0  1MEG
R2  102 0  1MEG
 
.MODEL MOS NMOS
+ LEVEL = 3
+ VTO   = 4.999
+ PHI   = 0.631
+ IS    = 0.1E-12
+ JS    = 0
+ THETA = 0.228
+ KP    = 5.001
 
.MODEL DGD D
+ IS    = 0.1E-12
+ CJO   = 0.219E-10
+ VJ    = 0.849
+ M     = 0.306
.MODEL DBD D
+ IS    = 0.1E-12
+ CJO   = 0.682E-10
+ VJ    = 0.824
+ M     = 0.387
.MODEL DBS D
+ IS    = 0.1E-12
+ BV    = 544
+ N     = 1
+ TT    = 0.188E-06
+ RS    = 0.798E-01
.MODEL DID D
+ IS    = 0.01E-12
+ RS    = 0
+ BV    = 554
.ENDS STB12NM50T4
 
* END OF MODELLING