* MODELLING FOR STP200NF04
 
.SUBCKT STP200NF04 1 2 3
LG 2 4  7.5n
LS 12 3 2.1n
LD 6 1  4.5n
RG 4 5  2.299
RS 9 12 0.883E-04
RD 7 6  0.451E-03
RJ 8 7  0.192E-04
CGS 5 9   0.469E-08
CGD 7 10  0.891E-08
CK  11 7  0.168E-08
DGD 11 7 DGD
DBS 12 6 DBS
DBD  9 7 DBD
MOS  13 5 9 9 MOS L=1u W=1u
E1  10 5 101 0 1
E2  11 5 102 0 1
E3  8 13 POLY(2) 6 8 6 12 0 0 0 0  0.995
G1  0 100 7 5 1u
D1  100 101  DID
D2  102 100  DID
R1  101 0  1MEG
R2  102 0  1MEG
.ENDS STP200NF04
 
.MODEL MOS NMOS
+ LEVEL = 3
+ VTO   = 3.584
+ PHI   = 0.838
+ IS    = 0.1P
+ JS    = 0
+ THETA = 0.743E-02
+ KP    = 119.563
+ eta   = 0.985E-02
 
.MODEL DGD D
+ IS    = 0.1P
+ CJO   = 0.234E-11
+ VJ    = 0.741
+ M     = 0.345
.MODEL DBD D
+ IS    = 0.1P
+ CJO   = 0.177E-11
+ VJ    = 0.748
+ M     = 0.343
.MODEL DBS D
+ IS    = 0.1P
+ BV    = 44
+ N     = 1
+ TT    = 0.829E-07
+ RS    = 0.103E-01
.MODEL DID D
+ IS    = 0.01P
+ RS    = 0
+ BV    = 52
 
* END OF MODELLING