* * _/_/_/_/_/_/ * _/ _/ * _/_/ _/ STMicroelectronics * _/ _/ * _/_/_/ _/ * www.st.com * * ***************************************************** * Model Generated by STMicroelectronics * * All Rights Reserved * * Commercial Use or Resale Restricted * ***************************************************** * CREATION DATES: 06-12-2007 * * * * POWER MOSFET Model (level 3) * * * * EXTERNAL PINS DESCRIPTION: * * * * PIN 1 -> Drain * * PIN 2 -> Gate * * PIN 3 -> Source * * * * ****C**** * * ********************** * * *************************************** * * PARAMETER MODELS EXTRACTED FROM MEASURED DATA * * <<<<<<<<<<<>>>>>>>>>>> * * *************************************** * * THIS MODEL CAN BE USED AT TEMPERATURE: 25 °C * * * ***************************************************** .SUBCKT STP20NM50FD 1 2 3 LG 2 4 7.5n LS 12 3 7.5n LD 6 1 4.5n RG 4 5 2.994 RS 9 12 0.781E-02 RD 7 6 0.129 RJ 8 7 0.356E-02 CGS 5 9 0.144E-08 CGD 7 10 0.146E-08 CK 11 7 0.174E-10 DGD 11 7 DGD DBS 12 6 DBS DBD 9 7 DBD MOS 13 5 9 9 MOS L=1u W=1u E1 10 5 101 0 1 E2 11 5 102 0 1 E3 8 13 POLY(2) 6 8 6 12 0 0 0 0 0.109 G1 0 100 7 5 1u D1 100 101 DID D2 102 100 DID R1 101 0 1MEG R2 102 0 1MEG .MODEL MOS NMOS + LEVEL = 3 + VTO = 4.784 + PHI = 1.051 + IS = 0.1P + JS = 0 + THETA = 0.499 + KP = 24.094 .MODEL DGD D + IS = 0.1P + CJO = 0.134E-09 + VJ = 0.618 + M = 0.439 .MODEL DBD D + IS = 0.1P + CJO = 0.239E-12 + VJ = 0.783 + M = 0.421 .MODEL DBS D + IS = 0.1P + BV = 544 + N = 1 + TT = 0.374E-06 + RS = 0.243E-01 .MODEL DID D + IS = 0.01P + RS = 0 + BV = 554 .ENDS STP20NM50FD * END OF MODELLING