The use of 250 V MOSFETs brings several benefits such as improved ruggedness and better reliability, which are key factors in plasma generator equipment where the RF power transistors are exposed to large voltage swings.
With an output power from 150 W to 300 W (in single ended or push pull packages), the devices offer reliable operations under severe operating conditions thanks to their 3 dB overdrive and high VSWR load mismatch capability.
| 50 V - 100 V technology comparison |
A comparison between the 100 V and the 50 V products shows a significant enhancement in the overall RF performance when switching from the 50 V to the 100 V technology.
The improved results have been obtained thanks to a new process and layout which reduce the parasitic effects.
The following table shows a brief summary of the main static parameters. |
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SD3931-10
(100 V) |
SD2931-10
(50 V) |
| BVDSS |
>250 |
>125 |
| Coss |
134 |
190 |
| Crss |
6 |
18 |
Comparison between 100 V and 50 V products |
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The Crss and Coss values suggest, for the 100 V die, higher gain, better efficiency and bandwidth operations of up to UHF frequencies.
Three basic RF characterizations of the 100 V DMOS products are shown in the following graphs. The top graph in particular gives a clear confirmation of the expected improvements in the RF behavior for the SD39xx series. |
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