BUL704
High voltage fast-switching NPN Power Transistor
Data Brief
General features
NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive
TO-220
1 2 3
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Internal schematic diagram
Applications
Electronic ballast for fluorescent lighting Dedicated for PFC solution in HF ballast halfbridge voltage fed
Order codes
Part Number BUL704 Marking BUL704 Package TO-220 Packing Tube
May 2006
Rev 1
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For further information contact your local STMicroelectronics sales office.
Electrical ratings
BUL704
1
Table 1.
S y mb o l VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Electrical ratings
Absolute maximum rating
Parameter Collector-em itter voltage (VBE = 0) Collector-em itter voltage (IB = 0) Em itter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25C Storage temperature M ax. operating junction temperature Value 700 400 10 4 8 2 4 70 -65 to 150 150 Uni t V V V A A A A W C C
Table 2.
S y mb o l Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-amb __max __max Value 1.78 62.5 Unit C /W C /W
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BUL704
Electrical characteristics
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 3.
Symbol ICES ICEO VEBO
Electrical characteristics
Parameter Collector cut-off current (V BE =-1.5V) Collector cut-off current (IB =0) Emitter-base voltage (IC = 0) Test Conditions VCE =700V VCE =700V VCE =400V IE =10mA IC =100mA L =25mH 400 IC =1A IC =2.5A IC =1A IC =2.5A IC =10mA IC =2A VCC =125V IB =0.2A IB =0.5A IB =0.2A IB =0.5A VCE =5V VCE =5V IC =2A 1.5 0.2 3 0.4 s s 10 14 28 0.5 0.8 1.1 1.2 V V V V V 10 Min. Typ. Ma x . 100 500 250 Uni t A A A V
Tj =125C
Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage Base-em itter saturation voltage DC current gain Resistive load Storage time Fall time Inductive load Storage time Fall time
VBE(sat) (1) hFE
ts tf ts tf
IB1 = -IB2 =0.4A tp = 30s (see fig.12 ) IC =2A VBE(off) =-5V IB1 =0.4A R BB =0
0.6 0.1
1 0.2
s s
Vclamp=200V (see fig.13)
Note (1) Pulsed duration = 300 s, duty cycle 1.5%
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Package mechanical data
BUL704
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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BUL704
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
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Q
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Revision history
BUL704
4
Table 4.
Date
Revision history
Revision history
R evision 1 Initial release. Changes
17-May-2006
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BUL704
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