STP200NF04 STB200NF04 - STB200NF04-1
N-CHANNEL 40V - 120 A - 3.3 m TO-220/D²PAK/I²PAK STripFETTMII MOSFET
Table 1: General Features
Type STB200NF04 STB200NF04-1 STP200NF04
s s
Figure 1: Package
ID 120 A 120 A 120 A Pw 310 W 310 W 310 W
3
3 1 2
VDSS 40 V 40 V 40 V
RDS(on) < 0.0037 < 0.0037 < 0.0037
STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO- 2 2 0
1
D2 P AK
DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
12
3
I2PAK Figure 2: Internal Schematic Diagram
APPLICATIONS s HIG H CURRENT, HIGH SWITCHING SPEED s AU TOM OT IVE
Table 2: Order Codes
SALES TYPE STB200NF04T4 STB200NF04-1 STP200NF04 MARKING B200NF04 B200NF04 P200NF04 PACKAGE D2PAK I2PAK TO-220 PACKAGING TAPE & REEL TUBE TUBE
Rev. 3 October 2004 1/15
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Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID (#) ID (#) IDM ( ) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 40 40 20 120 120 480 310 2.07 1.5 1.3 -55 to 175 Unit V V V A A A W W/C V/ns J C
( ) Pulse width limited by safe operating area (1) ISD 120A, di/dt 500A/s, VDD V(BR)DSS, T j TJMAX. (2) Starting Tj = 25C, Id = 60A, VDD=30 V (#) Current Limited by Package
Table 4: Thermal Data
TO-220 / I2PAK / D2PAK Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max Thermal Resistance Junction-ambient (Free air) Max Maximum Lead Temperature For Soldering Purpose 0.48 (see Figure 17) 62.5 300 C/W C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 90 A 2 3.3 Min. 40 1 10 100 4 3.7 Typ. Max. Unit V A A nA V m
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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V, ID = 90 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 150 5100 1600 600 Max. Unit S pF pF pF
Table 7: Switching On/Off
Symbol td(on) tr td(off) tf Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 20 V, ID = 90 A RG = 4.7 VGS = 10 V (see Figure 20) VDD = 20V, ID = 120 A, VGS = 10V (see Figure 23) Min. Typ. 30 320 140 120 170 30 62 210 Max. Unit ns ns ns ns nC nC nC
Table 8: Source Drain Diode
Symbol ISD ISDM (2) VSD (1) trr Q rr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A, VGS = 0 ISD = 120 A, di/dt = 100A/s VDD = 30V, Tj = 150C (see Figure 21) 85 190 4.5 Test Conditions Min. Typ. Max. 120 480 1.3 Unit A A V ns nC A
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area.
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Figure 3: Safe Operating Area Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
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Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Voltage vs Temperature
Figure 13: Normalized On Resistance vs Temp e rat u re
Figure 11: Dource-Drain Diode Forward Characteristics
Figure 14: Normalized Breakdown Voltage vs Temperature
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Figure 15: Thermal Resistance Rthj-a vs PCB Copper Area Figure 16: Max Power Dissipation vs PCB Copper Area
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Figure 17: Allowable lav vs. Time in Avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV W here: IAV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche To derate above 25 C, at fixed IAV, the following equation must be applied: IAV = 2 * (Tjmax - TCASE) / (1.3 * BVDSS * Zth) Where: Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV.
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SPICE THERMAL MODEL
Table 9: 6th Order RC Network
Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 CTHERM5 CTHERM6 Node 1-2 2-3 3-4 4-5 5-6 6-7 Value 1.4958E-3 3.5074E-2 5.939E-2 9.7411E-2 8.8596E-2 8.2755E-1
RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6
1-2 2-3 3-4 4-5 5-6 6-7
0.0384 0.0624 0.072 0.0912 0.1008 0.1152
Figure 18: Schematic of 6th Order RC Network
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Figure 19: Unclamped Inductive Load Test Circuit Figure 22: Unclamped Inductive Wafeform
Figure 20: Switching Times Test Circuit For Resistive Load
Figure 23: Gate Charge Test Circuit
Figure 21: Test Circuit For Inductive Load Switching and Diode Recovery Times
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TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
øP
Q
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D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 T YP M AX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0. 504 0795 0. 960 3. 937 1.197 BULK QTY 1000 1.039 0.520 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 0.35 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0.075 1.574 0.0098 0.0137 0.933 0. 956 MAX. 0. 421 0. 626 0. 063 0. 063 0. 073 0. 456 0. 197 0. 161 0. 476 0. 082
BASE QTY 1000
* on sales type
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Table 10: Revision History
Date 28-Sep-2004 11-Oct-2004 Revision 2 3 Description of Changes New Stylesheet. No Content Change Final datasheet
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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