STS12NH3LL
N-channel 30 V - 0.008 - 12 A - SO-8 ultra low gate charge STripFETTM Power MOSFET
Features
Type STS12NH3LL
VDSS 30 V
RDS(on) <0.0105
ID 12 A
Optimal RDS(on) x Qg trade-off @ 4.5 V Switching losses reduced Low input capacitance Low threshold device SO-8
Application
Switching applications
Description
This series is based on the latest generation of ST's proprietary "STripFETTM" technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in high-frequency DC-DC converters. It's therefore ideal for high-density converters in telecom and computer applications.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking 12H3LL Packag SO-8 Packaging Tape & reel
Order code STS12NH3LL
November 2007
Rev 9
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www.st.com 13
Contents
STS12NH3LL
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . ... 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STS12NH3LL
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS(1) VGS(2) ID ID IDM
(3)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Operating junction temperature Storage temperature Value 30 16 18 12 7.5 48 2.7 -55 to 150 Unit V V V A A A W C
PTOT TJ Tstg
1. Continuous mode 2. Guaranteed for test time 15 ms 3. Pulse width limited by safe operating area
Table 3.
Symbol Rthj-amb
(1)
Thermal resistance
Parameter Thermal resistance junction-ambient Value 47 Unit C/W
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
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Electrical characteristics
ST S 1 2 N H 3 L L
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 16 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 6 A VGS= 4.5 V, ID= 6 A 1 0.008 0.0105 0.010 0.013 Min. 30 1 10
100
Typ.
Max.
Unit V A A nA V
Table 5.
Symbol gfs Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Gate Input Resistance Test conditions VDS =10 V, ID = 12 A VDS =25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 12 A VGS =4.5 V (see Figure 20) VDD=15 V, ID = 12 A VGS =4.5 V (see Figure 20) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain 1.2 nC Min. Typ. 38 965 285 38 9 3.7 3 2.5 12 Max. Unit S pF pF pF nC nC nC nC
RG
0.5
1.5
2.5
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STS12NH3LL
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15 V, ID= 6 A, RG=4.7 , VGS=4.5 V (see Figure 14) Min. Typ. 15 32 18 8.5 Max. Unit ns ns ns ns
Table 7.
Symbol ISD ISDM(1) VSD(2) t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12 A, VGS=0 ISD=12 A, di/dt = 100 A/s, VDD=20 V, Tj=150 C (see Figure 16) 24 17.4 1.45 Test conditions Min Typ. Max 12 48 1.3 Unit A A V ns nC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 s, duty cycle 1.5%
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Electrical characteristics
ST S 1 2 N H 3 L L
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area Figure 3. Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
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STS12NH3LL Figure 8. Gate charge vs gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
Figure 13. Normalized BVDSS vs temperature
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Test circuit
STS12NH3LL
3
Test circuit
Figure 15. Gate charge test circuit
Figure 14. Switching times test circuit for resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
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STS12NH3LL Figure 20. Gate charge waveform
Id Vds Vgs
Test circuit
Vgs(th)
Qgs1 Qgs2
Qgd
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Package mechanical data
STS12NH3LL
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STS12NH3LL
Package mechanical data
SO-8 MECHANICAL DATA
DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP M AX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. M AX . 0.068 0.009 0.064 0.033 0.018 0.010 0.019
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Revision history
STS12NH3LL
5
Revision history
Table 8.
Date 22-Jun2004 03-Aug-2004 08-Mar-2005 17-Mar-2005 23-Jun-2005 30-Mar-2006 17-Apr-2007 23-Apr-2007 26-Nov-2007
Document revision history
Revision 1 2 3 4 5 6 7 8 9 First release Some value change in Table 2 Complete version Ron value change (see Table 4) New Rg value on Table 5 The document has been reformatted New parameters on Table 5 and new Figure 20 Modified value on Table 2 Modified marking on Table 1 Changes
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STS12NH3LL
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