BUL810
High voltage fast-switching NPN power transistor
Features
High voltage capability Low spread of dynamic parameters Low base-drive requirements Ver y high switching speed Fully characterized at 125 C
3 2 1
Applications
Electronic transformer for halogen lamps Electronic ballast for fluorescent lighting Switch mode power supplies. Figure 1.
TO-247
Description
The BUL810 is manufactured using high voltage multiepitaxial mesa technology for cost-effective high performance. It uses a hollow emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
Internal schematic diagram
Table 1.
Device summary
Marking BUL810 Package TO -247 Packaging Tube
O rder code BUL810
March 2008
Rev 4
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Electrical ratings
BUL810
1
Electrical ratings
Table 2. Absolute maximum ratings
S y mb o l VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 C Storage temperature Max. operating junction temperature Value 1000 450 9 15 22 5 10 125 -65 to 150 150 Unit V V V A A A A W C C
Table 3.
S y mb o l Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-ambient __max __max Value 1 30 Uni t C/W C/W
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BUL810
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 C unless otherwise specified) Table 4.
S y mb o l ICES
Electrical characteristics
Parameter Collector cut-off current (VBE = 0) Collector cut-off current (IB = 0) Test conditions VCE = 1000 V VCE = 1000 V TC = 125 C VCE = 450 V Min. Typ. Ma x . 100 500 250 Uni t A A A
ICEO
Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VEBO Emitter-base voltage (IC = 0) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Inductive load Storage time Fall time Inductive load Storage time Fall time
IC = 100 mA
450
V
IE = 10 mA IC = 5 A IC = 8 A IC = 12 A IB = 1 A IB = 1.6 A IB = 2.4 A IB = 1 A IB = 1.6 A VCE = 5 V V CE = 5 V IB1 = 1.6 A L = 200 H RBB = 0.4 IB1 = 1.6 A L = 200 H RBB = 0.4
9 1 1.5 5 1.3 1.6 10 10 40
V V V V V V
VCE(sat) (1)
VBE(sat) (1) hFE (1)
IC = 5 A IC = 8 A IC = 10 mA IC = 5 A IC = 8 A VCL = 350 V VBE(off) = -5 V IC = 8 A VCL = 350 V VBE(off) = -5 V Tc = 100 C
ts tf
1.5 55
2.3 110
s ns
ts tf
1.9 80
s ns
1. Pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
BUL810
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4.
DC current gain
Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation voltage
Figure 7.
Base-emitter saturation voltage
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BUL810 Figure 8. Inductive load fall time Figure 9.
Electrical characteristics Inductive storage fall time
Figure 10. Reverse biased safe operating area
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Electrical characteristics
BUL810
2.2
Test circuit
Figure 11. Inductive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier
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BUL810
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
BUL810
TO-247 Mechanical data
mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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BUL810
Revision history
4
Revision history
Table 5.
Dat e 01-Feb-2003 12-Feb-2008
Document revision history
Revision 3 4 Package change from TO-218 to TO-247. Changes
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BUL810
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