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N-Channel (>650V)
N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF
Datasheet
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Last Updated: 16/04/2008
Pages: 16
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Additional Information: 1,500V Power MOSFETs STx4N150: Beyond the 1000V frontline
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STFV4N150 - STFW4N150 STP4N150 - STW4N150
N-channel 1500 V - 5 - 4 A - PowerMESHTM Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF
Features
Type STFV4N150 STFW4N150 (1) STP4N150 STW4N150 VDSS 1500 V 1500 V 1500 V 1500 V RDS(on) max <7 <7 <7 <7 ID 4A 4A 4A 4A
3 1 2
1 2 3
TO-220
TO-247
1. All data which refers solely to the TO-3PF package is preliminary
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF and TO-220FH plastic packages Creepage distance path is 5.4 mm (typ.) for TO-3PF Creepage distance path is > 4 mm for TO-220FH Figure 1.
TO-3PF
3 1 2
1
2
3
TO-220FH
Internal schematic diagram.
Application
Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary
Order codes STFV4N150 STFW4N150 STP4N150 STW4N150 April 2008 Marking 4N150 4N150 P4N150 W4N150 Rev 6 Package TO-220FH TO-3PF TO-220 TO-247 Packaging Tube Tube Tube Tube 1/16
www.st.com 16
Contents
STFV4N150 - STFW4N150 - STP4N150 - STW4N150
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5
Test circuits
. . .. . .. . .. . .. . .. . .. . .. . .. . .. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM (1) PTOT Tstg Tj
Absolute maximum ratings
Value Parameter TO-220 TO-247 TO-220FH TO-3PF Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Storage temperature Max. operating junction temperature 4 2.5 12 160 4 2.5 12 1500 30 4 (1) 2.5 (1) 12 (1) 40 -55 to 150 150 4 (1) 2.5 (1) 12 (1) Tbd V V A A A W C C Unit
1. Pulse width limited by safe operating area
Table 3.
Symbol
Thermal data
Value Parameter TO-220 TO-247 TO-220FH TO-3PF Thermal resistance junction-case max Thermal resistance junctionambient max 62.5 Unit
Rthj-case Rthj-amb
0.78 50
3.12 62.5
Tbd
C/W C/W
Table 4.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (star ting Tj = 25 C, ID = IAR, VDD = 50 V) Value 4 350 Unit A mJ
3/16
Electrical characteristics
STFV4N150 - STFW4N150 - STP4N150 - STW4N150
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on
On/off states
Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125 C VGS = 30 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 2 A 3 4 5 Min. 1500 10 500 100 5 7 Typ. Max. Unit V A A nA V
Table 6.
Symbol gfs (1) Ciss Coss Crss td(on) Tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 30 V, ID = 2 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 3.5 1300 120 12 35 30 45 45 30 10 9 50 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDD = 750 V, ID = 2 A, RG = 4.7 , VGS = 10 V (see Figure 21) VDD = 600 V, ID = 4 A, VGS = 10 V (see Figure 22)
1. Pulsed: pulse duration=300 s, duty cycle 1.5%
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STFV4N150 - STFW4N150 - STP4N150 - STW4N150
Electrical characteristics
Table 7.
Symbol ISD ISDM(1) VSD(2) t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100A/s VDD = 45V (see Figure 21) ISD = 4 A, di/dt = 100 A/s VDD = 45V, Tj = 150C (see Figure 21) 510 3 12 Test conditions Min. Typ. Max. 4 12 2 Unit A A V ns C A
t rr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
615 4 12.6
ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
5/16
Electrical characteristics
STFV4N150 - STFW4N150 - STP4N150 - STW4N150
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220
Figure 4.
Safe operating area for TO-220FH
Figure 5.
Thermal impedance for TO-220FH
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
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STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Figure 8. Output characteristics Figure 9.
Electrical characteristics Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
7/16
Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature
STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Figure 15. Normalized on resistance vs temperature
Figure 16. Source-drain diode forward characteristics
Figure 17. Normalized BVDSS vs temperature
Figure 18. Maximum avalanche energy vs temperature
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STFV4N150 - STFW4N150 - STP4N150 - STW4N150
Test circuits
3
Test circuits
Figure 20. Unclamped inductive waveform
Figure 19. Unclamped inductive load test circuit
Figure 21. Switching times test circuit for resistive load
Figure 22. Gate charge test circuit
Figure 23. Test circuit for inductive load Figure 24. Switching time waveform switching and diode recovery times
9/16
Package mechanical data
STFV4N150 - STFW4N150 - STP4N150 - STW4N150
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STFV4N150 - STFW4N150 - STP4N150 - STW4N150
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
11/16
Package mechanical data
STFV4N150 - STFW4N150 - STP4N150 - STW4N150
TO-247 Mechanical data
mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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STFV4N150 - STFW4N150 - STP4N150 - STW4N150
Package mechanical data
TO-220FH (Fully plastic High voltage) MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9 15.9 9 14.5 2.4 28.6 9.8 3.4 16.4 9.3 15 0.626 0.354 0.570 0.094 4.4 2.5 2.5 0.45 0.75 1.3 1.3 4.95 2.4 10 16 30.6 10.6 1.126 0.385 0.134 0.645 0.366 0.590 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.8 1.8 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 0.630 1.204 0.417 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409
P011W
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Package mechanical data
STFV4N150 - STFW4N150 - STP4N150 - STW4N150
TO-3PF mechanical data
DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia mm . typ
min . 5 .30 2 .80 3 .10 1.80 0 .80 0 .65 1.80 10.30 15.30 9 .80 22.80 26.30 43.20 4.30 24.30 14.60 1 .80 3 .80 3 .40
m ax. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80
5.45 10
7627132_C
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STFV4N150 - STFW4N150 - STP4N150 - STW4N150
Revision history
5
Revision history
Table 8.
Date 29-Mar-2005 07-Jul-2005 07-Oct-2005 10-Aug-2006 06-Nov-2007 09-Apr-2008
Document revision history
Revision 1 2 3 4 5 6 Initial release Removed TO-220FP Document status promoted from preliminary data to datasheet Document reformatted, no content change Updated unit on Table 5: On/off states Added new packages: TO-220FH, TO-3PF Changes
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STFV4N150 - STFW4N150 - STP4N150 - STW4N150
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