STS01DTP06
Dual NPN-PNP complementary Bipolar transistor
General features
VCE(sat) 0.35V
hFE >100
IC 1A
High gain Low VCE(sat) Simplified circuit design Reduced component count S O- 8
Applications
Push-Pull or Totem-Pole configuration MOSFET and IGBT gate driving Motor, relay and solenoid driving
Internal schematic diagram
Description
The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar techlogy. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver.
Order codes
Part Number STS01DTP06 Marking S01DTP06 Package SO-8 Packing Tape & reel
March 2006
Rev 2
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Contents
STS01DTP06
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STS01DTP06
1
Electrical ratings
Table 1.
S y mb o l
Absolute maximum ratings
Parameter NPN Value PNP -60 -30 -5 -3 -6 -1 -2 2 1.6 -65 to 150 150 V V V A A A A W W C C Uni t
VCBO VCEO VEBO IC ICM IB IBM Ptot Ptot Tstg TJ
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at T c = 25C single Total dissipation at T c = 25C couple Storage temperature Max. operating junction temperature
60 30 5 3 6 1 2
Table 2.
S y mb o l
Thermal data
Parameter Value 62.5 78 Uni t C/W C/W
Rthj-amb 1 Thermal resistance junction-ambient____M__mMax (Single operation) Rthj-amb 1 Thermal resistance junction-ambient____M__mMax (Dual operation)
1
When mounted on 1 inch square pad of 2 oz. copper, t 10 sec.
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Electrical characteristics
STS01DTP06
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 3.
S y mb o l ICBO ICEO IEBO
Q1-NPN transistor electrical characteristics
Parameter Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test Conditions VCB = 60V VCE = 30V VEB = 5V Min. Typ. Max. 0.1 1 1 Unit A A A
Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) VCE(sat) (1) VBE(sat) (1) hFE (1) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
IC = 10mA IC = 1A IC = 2A IC = 1A IC = 1A IC = 3A IB = 10mA IB = 100mA IB = 10mA VCE = 2V VCE = 2V
30 0.35 1 0.7 1.1
V V V V
0.85 100 30
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
(Tcase = 25C unless otherwise specified) Table 4.
S y mb o l ICBO ICEO IEBO
Q2-PNP transistor electrical characteristics
Parameter Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test Conditions VCB = -60V VCE = -30V VEB = -5V Min. Typ. Max. -0.1 -1 -1 Unit A A A
Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage
IC = -10mA IC = -1A IC = -2A IB = -10mA IB = -100mA
-30 -0.35 -1 -0.7
V V V
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STS01DTP06 Table 4.
S y mb o l VBE(sat) (1) hFE (1)
Q2-PNP transistor electrical characteristics
Parameter Base-emitter saturation voltage DC current gain Test Conditions IC = -1A IC = -1A IC = -3A IB = -10mA VCE = -2V VCE = -2V 100 30 Min. Typ. -0.85 Max. -1.1 Unit V
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
2.1
Electrical characteristics (curve)
Figure 1. Reverse biased area Q1 NPN Figure 2. transistor DC current gain Q1 NPN transistor
Figure 3.
DC current gain Q1 NPN transistor
Figure 4.
Collector-emitter saturation voltage Q1 NPN transistor
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Electrical characteristics Figure 5. Base-emitter saturation voltage Q1 NPN transistor Figure 6.
STS01DTP06 Reverse biased area Q2 PNP transistor
Figure 7.
DC current gain Q2 PNP transistor
Figure 8.
DC current gain Q2 PNP transistor
Figure 9.
Collector-emitter saturation voltage Q2 PNP transistor
Figure 10. Base-emitter saturation voltage Q2 PNP transistor
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STS01DTP06
2.2
Test circuits
Figure 11. Typical application
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Package mechanical data
STS01DTP06
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STS01DTP06
SO-8 MECHANICAL DATA
DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP M AX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. M AX . 0.068 0.009 0.064 0.033 0.018 0.010 0.019
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Revision history
STS01DTP06
4
Revision history
Table 5.
Dat e 22-Apr-2005 22-Mar-2006 30-Mar-2006
Revision history
Revision 1 2 3 Initial release. New template The limit of current in figure number six has been modified from 6.5A to 6A. Changes
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STS01DTP06
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