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600V
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT
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Last Updated: 02/08/2007
Pages: 14
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STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESHTM IGBT
Features
Type STGW30NC60WD
VCES 600V
VCE(sat)Max @25C < 2.5V
IC @100C 30A
High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-247
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application.
Figure 1.
Internal schematic diagram
Applications
High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies
Table 1.
Device summary
Marking GW30NC60WD Package TO-247 Packaging Tube
Order code STGW30NC60WD
July 2007
Rev 4
1/14
www.st.com 14
Contents
ST G W 30 NC 60 WD
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6
3 4 5
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STGW30NC60WD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VCES IC IC ICM(1) VGE PTOT Tstg Tj TL
Absolute maximum ratings
Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25C Collector current (continuous) at 100C Collector current (pulsed) Gate-emitter voltage Total dissipation at TC = 25C Storage temperature 55 to 150 Operating junction temperature Maximum lead temperature for soldering purpose (1.6mm from case, for 10 sec.) 300 C C Value 600 60 30 200 20 200 Unit V A A A V W
1. Pulse width limited by max junction temperature
Table 3.
Symbol Rthj-case Rthj-amb
Thermal resistance
Parameter Thermal resistance junction-case Thermal resistance junction-ambient Min. Typ. Max. Unit
0.625 C/W 62.5 C/W
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Electrical characteristics
STGW30NC60WD
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol VBR(CES) VCE(SAT) VGE(th) ICES IGES gfs
Static electrical characteristics
Parameter Collector-emitter breakdown voltage Test conditions IC = 1mA, VGE = 0 Min. 600 2.1 1.8 3.75 2.5 Typ. Max. Unit V V V V A mA nA S
Collector-emitter saturation VGE=15V, IC= 20A, Tj= 25C voltage VGE=15V, IC= 20A,Tj= 125C Gate threshold voltage Collector-emitter leakage current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250A VCE = Max Rating,Tc=25C VCE = Max Rating, Tc=125C VGE = 20V, VCE = 0 VCE = 15V, IC= 20A
5.75 10 1 100 15
Table 5.
Symbol Cies Coes Cres Qg Qge Qgc ICL
Dynamic electrical characteristics
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Turn-Off SOA minimum current Test conditions Min. Typ. 2080 175 52 102 17.5 47 200 140 Max. Unit pF pF pF nC nC nC A
VCE = 25V, f = 1MHz, VGE=0
VCE = 390V, IC = 20A, VGE = 15V, (see Figure 17) Vclamp = 480V , Tj = 150C RG = 10, VGE= 15V
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STGW30NC60WD
Electrical characteristics
Table 6.
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf
Switching on/off (inductive load)
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 20A , RG= 10 VGE= 15V, TJ= 25C (see Figure 17) VCC = 390V, IC = 20A , RG= 10 VGE= 15V, TJ= 125C (see Figure 17) Vcc = 390V, IC = 20A, RGE = 10 , VGE=15V,TJ=25C (see Figure 19) Vcc = 390V, IC = 20A, , RGE=10 VGE =15V, TJ=125C (see Figure 19) Min. Typ. 29.5 12 1640 29 13.5 1600 19.5 118 27 Max. Unit ns ns A/s ns ns A/s ns ns ns
Off voltage rise time Turn-off delay time Current fall time
46 151 38
ns ns ns
Table 7.
Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets
Switching energy (inductive load)
Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 20A , RG= 10 VGE= 15V, Tj= 25C (see Figure 19) VCC = 390V, IC = 20A , RG= 10 VGE= 15V, Tj= 125C (see Figure 19) Min. Typ. 305 181 486 455 355 801 Max. Unit J J J J J J
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current
5/14
Electrical characteristics
STGW30NC60WD
Table 8.
Symbol Vf trr Q rr I rr m S trr Q rr I rr m S
Collector-emitter diode
Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Softness factor of the diode Reverse recovery time Reverse recovery charge Reverse recovery current Softness factor of the diode Test conditions If = 10A If = 10A, Tj = 125C If = 20A, VR = 50V, di/dt=100A/s, Tj=25C (see Figure 20) Min. Typ. 1.5 1.1 44 66 3 0.375 88 237 5.4 0.57 Max. 2 Unit V V ns nC A
If = 20A, VR = 50V, di/dt=100A/s, Tj=125C (see Figure 20)
ns nC A
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STGW30NC60WD
Electrical characteristics
2.1
Figure 2.
Electrical characteristics (curves)
Output characteristics Figure 3. Transfer characteristics
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage vs temperature
Figure 6.
Gate charge vs gate-source voltage Figure 7.
Capacitance variations
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Electrical characteristics Figure 8. Normalized gate threshold voltage vs temperature Figure 9.
STGW30NC60WD Collector-emitter on voltage vs collector current
Figure 10. Normalized breakdown voltage vs temperature
Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current
8/14
STGW30NC60WD Figure 14. Thermal impedance
Electrical characteristics Figure 15. Turn-off SOA
Figure 16. Emitter-collector diode characteristics
9/14
Test circuit
ST G W 30 NC 60 WD
3
Test circuit
Figure 18. Gate charge test circuit
Figure 17. Test circuit for inductive load switching
Figure 19. Switching waveform
Figure 20. Diode recovery time waveform
10/14
STGW30NC60WD
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STGW30NC60WD
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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STGW30NC60WD
Revision history
5
Revision history
Table 9.
Date 21-Nov-2005 29-Nov-2005 06-Mar-2006 12-Jul-2007
Revision history
Revision 1 2 3 4 Initial release. Modified Figure 5 and Figure 6 New template Corrected Figure 11, Figure 12, Figure 13 Changes
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STGW30NC60WD
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