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Transistors, Power Bipolar
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Low Voltage - High Performance
Low voltage fast-switching NPN power transistor
Datasheet
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Last Updated: 18/06/2007
Pages: 11
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Additional Information: Power bipolar high current density - The new high-efficiency, low voltage technology
Power Bipolar Transistors Product Page
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2STF1360 2STN1360
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
Features
VERY LOW COLLECTOR-EMITTER SATUARATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED IN COMPLANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE SURFACE MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING
2 2
3
SOT-89
1
SOT-223
Applications
EMERGENCY LIGHTING LE D CCFL DRIVERS (BACK LIGHTING) VOLTAGE REGULATION RELAY DRIVER
Internal Schematic Diagram
Description
The 2STF1360 and 2STN1360 are NPN transistors manufactured using new "PB-HDC" (Pow er Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Order Codes
Part Number 2STF1360 2STN1360 Marking 1360 N1360 Package SO T-89 SOT-223 Packing Tape & Reel Tape & Reel
November 2005
rev.1 1/11
www.st .com 11
1 Absolute Maximum Ratings
2STF1360 - 2STN1360
1
Table 1.
S y mb o l
Absolute Maximum Ratings
Absolute Maximum Rating
Parameter Value 2STF1360 SOT-89 VCBO VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Collector-Base Voltage (IE = 0) (IC = 0) 80 60 6 3 5 0. 2 0. 4 1. 4 -65 to 150 150 1.6 2STN1360 SOT-223 V V V A A A A W C C Unit
Collector-Emitter Voltage (IB = 0) Em itter-Base Voltage Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25C Storage Temperature M ax. Operating Junction Temperature
Table 2.
S y mb o l RthJ-amb #
Thermal Data
Parameter Therm al Resistance Junction-Ambient ______ ______Max SOT-89 89 SO T-223 78 C/W
N ote:
# Device mounted on a PCB area of 1 cm 2.
2/11
2STF1360 - 2STN1360
2 Electrical Characteristics
2
Table 3.
S y mb o l ICBO IEBO VBE VCE(sat) Note: 1 VBE(sat) Note: 1 hFE Note: 1 td tr ts tf fT
Electrical Characteristics
Electrical Characteristics (TCASE = 25C; unless otherwise specified)
Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (IC = 0) Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions VCB = 80 V VEB = 6 V VCE = 2 V IC = 2 A __ _ IC = 3 A IC = 2 A __ _ IC = 100 mA _ IC = 1 A _ RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time Transition Frequency VCC = 10 V (see figure 8) IC = 100 mA IB = 100 mA IB = 100 mA VCE = 2 V VC E = 2 V IC = 3 A 80 160 __ _ IB = 150 mA 630 670 150 210 0.89 Min. Typ. Max. 100 100 730 300 500 1.2 Uni t nA nA mV mV mV V
280
400
IB1 = - IB2 = 300 mA
17 81 620 54 130
20 100 720 65
ns ns ns ns M Hz
IC = 0.1 A ___
VCE = 10 V
Note: 1 Pulsed duration = 300 s, duty cycle 1.5%.
3/11
2 Electrical Characteristics
2STF1360 - 2STN1360
2.1
Typical Characteristics
DC Current Gain Figure 2. DC Current Gain
Figure 1.
Figure 3.
Collector Emitter Saturation Voltage Figure 4.
Base Emitter Saturation Voltage
Figure 5.
Resistive Load Switching Times
Figure 6.
Resistive LoadSwitching Times
4/11
2STF1360 - 2STN1360
Figure 7. Reverse Bised SOA
2 Electrical Characteristics
5/11
3 Test Circuits
2STF1360 - 2STN1360
3
Figure 8.
Test Circuits
Resistive Load Switching Test Circuit
1) Fast electronic switch 2) Non-inductive Resisitor
6/11
2STF1360 - 2STN1360
4 Package Mechanical Data
4
Package Mechanical Data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
7/11
4 Package Mechanical Data
2STF1360 - 2STN1360
SOT-89 MECHANICAL DATA
mm MIN. A B B1 C C1 D D1 E e e1 H L 1.4 0.44 0.36 0.35 0.35 4.4 1.62 2.29 1.42 2.92 3.94 0.89 TYP. MAX. 1.6 0.56 0.48 0.44 0.44 4.6 1.83 2.6 1.57 3.07 4.25 1.2 MIN. 55.1 17.3 14.2 13.8 13.8 173.2 63.8 90.2 55.9 115.0 155.1 35.0 mils TYP. MAX. 63.0 22.0 18.9 17.3 17.3 181.1 72.0 102.4 61.8 120.9 167.3 47.2
DIM.
P025H
8/11
2STF1360 - 2STN1360
4 Package Mechanical Data
SOT-223 MECHANICAL DATA
mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 1 0o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 1 0o MIN. i nch TYP. MAX. 0.071 0.031 0.122 0.013 0.264
DIM.
P008B
9/11
5 Revision History
2STF1360 - 2STN1360
5
Revision History
Date 21-Nov-2005 Revision 1 Initial Release Changes
10/11
2STF1360 - 2STN1360
5 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
11/11
Document Number: 11783
(195 kb)
