BUL705
High voltage fast-switching NPN Power Transistor
General features
NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 C In compliance with the 2002/93/EC European Directive
1 2 3
TO-220
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Internal schematic diagram
Applications
Electronic ballast for fluorescent lighting Dedicated for PFC solution in HF ballast halfbridge voltage fed
Order codes
Part Number BUL705 Marking BUL705 Package TO-220 Packing Tube
May 2006
Rev 1
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BUL705
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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BUL705
Electrical ratings
1
Electrical ratings
Table 1.
S y mb o l VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25C Storage temperature Max. operating junction temperature Val ue 700 400 10 5 10 2 4 80 -65 to 150 150 Unit V V V A A A A W C C
Table 2.
S y mb o l Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-amb __max __max Value 1.56 62.5 Uni t C/W C/W
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Electrical characteristics
BUL705
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 3.
S y mb o l ICES ICEO VEBO
Electrical characteristics
Parameter Collector cut-off current (VBE =-1.5V) Collector cut-off current (IB =0) Emitter-base voltage (IC = 0) Test Conditions VCE =700V VCE =700V VCE =400V IE =10mA 10 Min. Typ. Max. 100 500 250 Unit A A A V
Tj =125C
Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
IC =100mA IC =2A IC =3A IC =4A IC =2A IC =3A IC =10mA IC =2A VCC =250V IB1 = -IB2 =0.4A (see fig.12 ) IC =2A VBE(off) =-5V Vclamp=250V (see fig.13) IC =2A VBE(off) =-5V Vclamp=250V
L =25mH IB =0.4A IB =0.6A IB =1A IB =0.4A IB =0.6A V CE =5V V CE =5V IC =2A
400
V
0.4 0.6 0.8 1.1 1.2 10 16 32
V V V V V
VBE(sat) (1) hFE
ts
Resistive load Storage time
2.4 IB1 =0.4A R BB =0 L =200H IB1 =0.4A R BB =0 L =200H (see fig.13) 1 75 0.7 50
3.5
s
ts tf
Inductive load Storage time Fall time
1.4 100
s ns
ts tf
Inductive load Storage time Fall time
s ns
Tj =125C
Note (1) Pulsed duration = 300 s, duty cycle 1.5%
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Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Derating Curve
Figure 3.
DC current gain
Figure 4.
DC current gain
Figure 5.
Collector-emitter saturation voltage
Figure 6.
Base-emitter saturation voltage
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Electrical characteristics Figure 7. Inductive load fall time Figure 8.
BUL705 Inductive load storage time
Figure 9.
Reverse biased safe operating area
2.2
Test circuits
Figure 10. Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
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BUL705 Figure 11. Inductive load switching test circuit
Electrical characteristics
1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier
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Package mechanical data
BUL705
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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BUL705
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
øP
Q
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Revision history
BUL705
4
Revision history
Table 4.
Dat e 22-May-2006
Revision history
Revision 1 Initial release. Changes
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BUL705
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