STG3P2M10N60B
1 phase bridge rectifier + 3 phase inverter IGBT - SEMITOP2 module
Features
Low on-voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode High frequency operation up to 70 kHz One screw mounting Compact design Semitop2 is a trademark of Semikron
SEMITOP2
Applications
High frequency motor controls Motor drivers Figure 1. Internal schematic diagram
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBT, with outstanding performances.
Table 1.
Device summary
Order code Marking G3P2M10N60B Package SEMITOP2 Packaging Semibox
STG3P2M10N60B
October 2008
Rev 2
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www.st.com 12
Contents
STG3P2M10N60B
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Typical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 4 5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STG3P2M10N60B
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VCES IC(1) IC(1) VGE ICM(2) ICM (2) IF PTOT VISO Tstg Tj
Absolute maximum ratings
Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at Ts= 25 C Collector current (continuous) at Ts= 80 C Gate-emitter voltage Collector current (pulsed, tp < 1 ms) Ts=25 C Collector current (pulsed, tp < 1 ms) Ts=80 C Diode RMS forward current at Ts= 25 C Total dissipation at Ts= 25 C Insulation withstand voltage A.C. (t=1 min/sec; Ts = 25 C) Storage temperature Operating junction temperature Value 600 19 10 20 38 20 19 56 2500/3000 40 to 125 40 to 150 Unit V A A V A A A W V C C
1. Calculated value 2. Pulse width limited by max. junction temperature
Table 3.
Symbol Rth(j-s)
Thermal resistance
Parameter Thermal resistance junction-sink(1) max. Value 2.2 Unit k/W
1. Resistance value with conductive grease applied and maximum mounting torque equal to 2Nm
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Electrical characteristics
STG3P2M10N60B
2
Electrical characteristics
(Ts = 25 C unless otherwise specified) Table 4.
Symbol
Static
Parameter Test conditions Min. Typ. Max. Unit
Collector-emitter V(BR)CES breakdown voltage (VGE = 0) ICES IGES VGE(th) VCE(sat) Collector cut-off current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage
IC = 1 mA VCE = 600 V VCE = 600 V, TS = 125 C VGE = 20 V VCE = VGE, IC = 250 A
600
V
10 1 100 3.75 1.85 1.7 5.75 2.5
A mA nA V V V
Collector-emitter saturation VGE = 15 V, IC= 7 A voltage VGE= 15 V, IC= 7 A, Ts = 125 C
Table 5.
Symbol gfs (1) Cies Coes Cres Qg Qge Qgc
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 15 V, IC= 7 A VCE = 25 V, f = 1 MHz, VGE = 0 Min. Typ. 4.30 720 81 17 35 7 16 48 Max. Unit S pF pF pF nC nC nC
VCE = 390 V, IC = 5 A, VGE = 15 V, (see Figure 9)
1. Pulsed: pulse duration=300s, duty cycle 1.5%
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STG3P2M10N60B
Electrical characteristics
Table 6.
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf
Switching on/off
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 300 V, IC = 7 A RG= 22 , VGE= 15 V (see Figure 10) VCC = 300 V, IC = 7 A RG= 22 , VGE= 15 V Ts =125C (see Figure 10) VCC = 300 V, IC = 7 A RG= 22 , VGE= 15 V (see Figure 10) VCC = 300 V, IC = 7 A RG= 22 , VGE= 15 V Ts=125 C (see Figure 10) Min. Typ. 18.5 8.5 1060 18.5 7 1000 27 72 60 56 116 105 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns
Table 7.
Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets
Switching energy (inductive load)
Parameter Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 300 V, IC = 7 A RG= 22 , VGE= 15 V (see Figure 10) VCC = 300 V, IC = 7 A RG= 22 , VGE= 15 V Ts= 125 C (see Figure 10) Min. Typ. 95 115 210 Max. Unit J J J
Turn-on switching losses Turn-off switching losses Total switching losses
140 215 355
J J J
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current
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Electrical characteristics
STG3P2M10N60B
Table 8.
Symbol VF t rr ta Qrr I rr m S t rr ta Qrr I rr m S
Collector-emitter diode
Parameter Forward on-voltage Reverse recovery time IF = 7 A,VR = 40 V, di/dt = 100 A/s (see Figure 7) Test conditions IF = 3.5 A IF = 3.5 A, Ts = 125 C Min. Typ. 1.3 1.1 37 22 40 2.1 0.68 6 IF = 7 A,VR = 40 V, di/dt = 100 A/s (see Figure 7) 34 98 3.2 0.79 ns ns nC A Max. 1.9 Unit V V ns ns nC A
Reverse recovery charge Reverse recovery current Softness factor of the diode Reverse recovery time
Reverse recovery charge Reverse recovery current Softness factor of the diode
Table 9.
Symbol VF Rth(j-s) Tj
Bridge rectifier diode
Parameter Forward on-voltage Thermal resistance junction-sink(1) Operating junction temperature -40 Test conditions IF = 20 A, Ts= 125 C Min. Typ. Max. 1.1 2.15 150 Unit V K/W C
1. Resistance value with conductive grease applied and maximum mounting torque equal to 2Nm
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STG3P2M10N60B
Electrical characteristics
2.1
Typical characteristics (curves)
Figure 2. Output characteristics at
Ts = 25 C
Figure 3.
Output characteristics at
Ts = 125 C
Figure 4.
Capacitance variations
Figure 5.
Gate charge vs gate-emitter voltage
Figure 6.
Total switching losses vs gate Figure 7. resistance
Total switching losses vs collector current
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Test circuits
STG3P2M10N60B
3
Figure 8.
Test circuits
Test circuit for inductive load switching Figure 9. Gate charge test circuit
AM01504v1
AM01505v1
Figure 10. Switching waveform
Figure 11. Diode recovery time waveform
90% VG 10% 90% VCE
Tr(Voff) Tcross
di/dt IF ta 10% trr tb
Qrr
t 90% IRRM IRRM 10%
IC
Td(off) Td(on) Tr(Ion) Ton Toff Tf
VF di/dt AM01506v1 AM01507v1
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STG3P2M10N60B
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STG3P2M10N60B
SEMITOP2 mechanical data
Dim A A1 A2 A3 øb øb1 D D2 E E1 E2 e e1 e2 e3 f L L1 L2 L3 øP øP1 øp2 R
mm Min 15.30 15.23 Typ Max 15.70 15.63 15.50 15.43 10.50 10 1.50 1.60 40.20 40.50 38 27.80 28 19.80 20 25.50 2.90 3 1.50 7.80 8 3.90 4 2.50 3.43 3.50 11.80 12 5.20 4.30 4.40 12 14.50 1 SEMITOP2 is a trademark of SEMIKRON
40.80 28.20 20.20 3.10 8.20 4.10
12.20 4.50
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STG3P2M10N60B
Revision history
5
Revision history
Table 10.
Date 15-May-2005 15-Oct-2008
Document revision history
Revision 1 2 Initial release. Document status promoted from preliminary data to datasheet. Changes
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STG3P2M10N60B
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