STG3P3M25N60
3 phase inverter IGBT - SEMITOP3 module
Features
Low on-voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode High frequency operation up to 70 kHz One screw mounting Compact design Semitop3 is a trademark of Semikron
SEMITOP3
Applications
High frequency inverters Motor drivers Figure 1. Internal schematic diagram
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Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBT, with outstanding performances.
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Scheme_semitop3
Table 1.
Device summary
Order code Marking G3P3M25N60 Package SEMITOP3 Packaging Semibox
STG3P3M25N60
October 2008
Rev 2
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www.st.com 12
Contents
STG3P3M25N60
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Typical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 4 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STG3P3M25N60
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VCES IC(1) IC(1) VGE ICM(2) ICM (2) IF PTOT VISO Tstg Tj
Absolute maximum ratings
Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at Ts = 25 C Collector current (continuous) at Ts = 80 C Gate-emitter voltage Collector current (pulsed, tp < 1 ms) Ts=25 C Collector current (pulsed, tp < 1 ms) Ts=80 C Diode RMS forward current at Ts = 25 C Total dissipation at Ts = 25 C Insulation withstand voltage A.C. (t=1 min/sec; Ts= 25 C) Storage temperature Operating junction temperature Value 600 50 25 20 100 50 19 96 2500/3000 40 to 125 40 to 150 Unit V A A V A A A W V C C
1. Calculated value 2. Pulse width limited by max. junction temperature
Table 3.
Symbol Rth(j-s)
Thermal resistance (for single IGBT)
Parameter Thermal resistance junction-sink(1) max. Value 1.3 Unit k/W
1. Resistance value with conductive grease applied and maximum mounting torque equal to 2Nm
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Electrical characteristics
STG3P3M25N60
2
Electrical characteristics
(Ts= 25 C unless otherwise specified) Table 4.
Symbol
IGBT-Inverter parameters
Parameter Test conditions Min. Typ. Max. Unit
Collector-emitter V(BR)CES breakdown voltage (VGE= 0) ICES IGES VGE(th) VCE(sat) Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Gate threshold voltage
IC= 1 mA VCE= 600 V VCE= 600 V, Ts= 125 C VGE= 20 V VCE = VGE, IC= 250 A
600
V
10 1 100 3.75 1.85 1.7 5.75 2.5
A mA nA V V V
Collector-emitter saturation VGE= 15 V, IC= 20 A voltage VGE=15 V, IC= 20 A, Ts=125C
Table 5.
Symbol gfs (1) Cies Coes Cres Qg Qge Qgc
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 15 V, IC= 20 A VCE = 25 V, f = 1 MHz, VGE = 0 VCE = 390 V, IC = 20 A, VGE = 15 V, (see Figure 9) Min. Typ. 15 2200 225 50 100 16 45 140 Max. Unit S pF pF pF nC nC nC
1. Pulsed: pulse duration=300s, duty cycle 1.5%
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STG3P3M25N60
Electrical characteristics
Table 6.
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf
Switching on/off
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 300 V, IC = 20 A RG= 3.3 , VGE= 15 V, (see Figure 10) VCC = 300 V, IC = 20 A RG= 3.3 , VGE= 15 V, Ts=125C (see Figure 10) VCC = 300 V, IC = 20 A RG= 3.3 , VGE= 15 V, (see Figure 10) VCC = 300 V, IC = 20 A RG= 3.3 , VGE= 15 V, Ts=125 C (see Figure 10) 28 100 75 66 150 130 ns ns ns ns ns ns Min. Typ. 31 11 1600 31 11.5 1500 Max. Unit ns ns A/s ns ns A/s
Table 7.
Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets
Switching energy (inductive load)
Parameter Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 300 V, IC = 20 A RG= 3.3 , VGE= 15 V, (see Figure 10) VCC = 300 V, IC = 20 A RG= 3.3 , VGE= 15 V, Ts= 125 C (see Figure 10) Min. Typ. 220 330 550 Max. Unit J J J
Turn-on switching losses Turn-off switching losses Total switching losses
450 770 1220
J J J
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current
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Electrical characteristics
STG3P3M25N60
Table 8.
Symbol VF t rr ta Qrr I rr m S t rr ta Qrr I rr m S
Collector-emitter diode
Parameter Forward on-voltage Reverse recovery time IF = 20 A ,VR = 40 V, di/dt = 100 A/s Test conditions IF = 10 A IF = 10 A, Ts = 125 C Min. Typ. 1.3 1.0 44 32 Reverse recovery charge Reverse recovery current Softness factor of the diode Reverse recovery time IF = 20 A ,VR = 40 V, Reverse recovery charge Reverse recovery current Softness factor of the diode di/dt = 100 A/s, Ts = 125 C 66 3 0.375 88 56 237 5.4 0.57 ns ns nC A Max. 2.0 Unit V V ns ns nC A
Table 9.
Symbol Rts
Temperature sensor
Parameter Equivalent resistance conditions 5%, Tr = 25 (100) C Min. Typ. Max. 5000 (493) Unit
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STG3P3M25N60
Electrical characteristics
2.1
Typical characteristics (curves)
Figure 2. Output characteristics at Ts = 25 C Figure 3. Output characteristics at Ts = 125 C
Figure 4.
Capacitance variation
Figure 5.
Gate charge vs gate-emitter voltage
Figure 6.
Total switching losses vs gate Figure 7. resistance
Total switching losses vs collector current
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Test circuits
STG3P3M25N60
3
Figure 8.
Test circuits
Test circuit for inductive load switching Figure 9. Gate charge test circuit
AM01504v1
AM01505v1
Figure 10. Switching waveform
Figure 11. Diode recovery time waveform
90% VG 10% 90% VCE
Tr(Voff) Tcross
di/dt IF ta 10% trr tb
Qrr
t 90% IRRM IRRM 10%
IC
Td(off) Td(on) Tr(Ion) Ton Toff Tf
VF di/dt AM01506v1 AM01507v1
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STG3P3M25N60
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STG3P3M25N60
SEMITOP3 mechanical data
Dim A A1 A2 A3 øb øb1 D D2 E E1 E2 e e1 e2 e3 f L L1 L2 L3 øP øP1 øp2 R
mm Min 15.30 15.23 Typ Max 15.70 15.63 15.50 15.43 10.50 10 1.50 1.60 54.70 55 52.50 30.70 31 22.55 22.75 28.50 3.90 4 2 2.90 3 5.40 5.50 2.50 3.43 3.50 11.80 12 5.20 4.30 4.40 12 14.50 1 SEMITOP3 is a trademark of SEMIKRON
55.30 31.30 23 4.10 3.10 5.60
12.20 4.50
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STG3P3M25N60
Revision history
5
Revision history
Table 10.
Date 29-May-2006 02-Oct-2008
Revision history
Revision 1 2 Initial release Updated Figure 6 and Figure 7 Document status promoted from preliminary data to datasheet. Changes
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STG3P3M25N60
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