BUL805
High voltage fast-switching NPN power transistor
Features
High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Ver y high switching speed
3 1 2
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds. The device is designed for use as PFC in high frequency ballast half bridge voltage fed topology.
TO-220
Figure 1.
Internal schematic diagram
Applications
Electronic ballast for fluorescent lighting Dedicated for PFC solution in half-bridge voltage fed topology.
Table 1.
Device summary
Marking BUL805 Package TO-220 Packaging Tube
Order code BUL805
July 2008
Rev 2
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BUL805
Contents
1 2 3 4 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
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BUL805
Electrical ratings
1
Electrical ratings
Table 2.
S y mb o l VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at TC = 25C Storage temperature Max. operating junction temperature Value 800 450 9 5 10 2 4 80 -65 to 150 150 Unit V V V A A A A W C C
Table 3.
S y mb o l Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-amb __max __max Value 1.56 62.5 Uni t C/W C/W
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Electrical characteristics
BUL805
2
Electrical characteristics
(Tcase = 25 C unless otherwise specified) Table 4.
S y mb o l ICES
Electrical characteristics
Parameter Collector cut-off current (VBE = 0) Collector cut-off current (IB = 0) Emitter-base voltage (IC = 0) Test conditions VCE = 800 V VCE = 800 V TC = 125 C VCE = 450 V IE = 10 mA Min. Typ. Max. 100 500 250 Unit A A A
ICEO VEBO
9
V
Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage
IC = 10 mA IC = 1 A IC = 2 A IC = 3 A IB = 0.2 A IB = 0.4 A IB = 0.6 A IB = 0.2 A IB = 0.4 A IB = 0.6 A V CE = 5 V V CE = 5 V
450
V 0.4 0.6 0.8 1.1 1.3 1.5 V V V V V V
VBE(sat) (1)
Base-emitter saturation voltage
IC = 1 A IC = 2 A IC = 3 A
hFE
DC current gain
IC = 10 mA IC = 2 A
10 10 20
(1) Pulsed duration = 300 s, duty cycle 1.5%
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BUL805
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
BUL805
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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BUL805
Revision history
4
Revision history
Table 5.
Dat e 19-M ay-2006 15-Jul-2008
Document revision history
Revision 1 2 Initial release. Document status promoted from preliminary data to datasheet. Changes
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BUL805
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