STC03DE220HV
Features
Table 1.
VCS(ON) 1V
Features
IC 3A RCS(ON) 0.33
.
Low equivalent on resistance Ver y fast-switch, up to 150 kHz Ver y low CISS driven by RG = 4.7
23 4
Applications
1
Aux SMPS for three phase mains
TO247-4L HV
Description
The STC03DE220HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE220HV is designed for use in aux flyback smps for any three phase application. Figure 1. Internal schematic diagrams
Table 2.
Device summary
Marking C03DE220HV Package TO247-4L HV Packaging Tube
Order code STC03DE220HV
May 2008
Rev 2
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ww w.st .com 7
W
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33
Electrical ratings
STC03D E220HV
1
Electrical ratings
Table 3.
S y mb o l VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-source voltage (V BS = VGS =0) Base-source voltage (IC = 0, VGS = 0) Source-base voltage (IC = 0, VGS = 0) Gate-source voltage Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tc 25 C Storage temperature Max. operating junction temperature Value 2200 30 9 Unit V V V V A A A A W C C
20
3 6 3 6 166 -40 to 150 125
Table 4.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case max Value 0.6 Unit C/W
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STC03DE220HV
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 C; unless otherwise specified) Table 5.
S y mb o l ICS(SS) IBS(OS) ISB(OS) IGS(OS)
Electrical characteristics
Parameter Test conditions M in. Typ. Ma x . 100 Unit A
Collector-source = 2200 V V current (V BS =VGS = 0) CS(SS) Base-source current (IC =0, VGS = 0) Source-base current (IC =0, VGS = 0) Gate-source leakage (V BS = 0) Collector-source ON voltage DC current gain Base-source ON voltage VBS(OS) = 30 V VSB(OS) = 9 V VGS = 20 V VGS = 10 V IC = 1.5 A IB = 0.15 A VGS = 10 V IC = 3 A IB = 0.6 A 0.2 0.25 15 10 0.82 1 1.5 2.2 750
10
A
100
A
500
nA V V
VCS(ON)
hFE
VCS = 1 V VGS =10 V IC =1.5 A VCS = 1 V VGS =10 V IC =3 A VGS = 10 V IC = 1.5 A IB = 0.15 A IB = 0.6 A VGS =10 V IC =3 A IB = 250 A f = 1 MHz VGS = 10 V RG = 47 tp = 4 s IB = 0.3 A
VBS(ON) VGS(th) Ciss
V V 3 V pF
Gate threshold voltage VBS = VGS Input capacitance (VGS = VCB = 0) Gate-source Charge (V CB = 0) INDUCTIVE LOAD Storage time Fall time VCS = 25 V VCS =15 V IC = 1.8 A VGS = 10 V
QGS(tot)
12.5
nC
ts tf
VClamp = 1760 V IC = 1.5 A VCC = V Clamp = 400 V
1040 20
ns ns
VCS(dyn)
Collector-source dynamic voltage (500 ns)
VGS = 10 V IB = 0.3 A tpeak = 500 ns
IC = 1.5 A RG = 47 IBpeak = 3 A
7.6
V
VCC = V Clamp = 400 V VCS(dyn) Collector-source dynamic voltage (1 s) Maximum collectorsource voltage switched without snubber VGS = 10 V IB = 0.3 A tpeak = 500 ns IC = 1.5 A RG = 47 IBpeak = 3 A 5.8 V
VCSW
RG = 47
hFE = 5
IC = 3 A
2200
V
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Package mechanical data
STC03D E220HV
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com
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STC03DE220HV
Package mechanical data
TO247-4L HV mechanical data
DI M. A A1 A2 b b1 b2 c D D1 E e e1 L L1 L2 L3 øP S
MI N. 4. 85 2. 20 0. 95 1. 10 2. 50 0. 40 23.85 15.45
m m. TY P 2. 50 1. 27 1. 10
MA X . 5.15 2.60 1.30 1.50 2.90 0.80 24. 15 15. 75
24 21.50 15.60 2. 54 5. 08
10.20 2. 20
2. 50 18.50 3 5. 50
10. 80 2.80
3. 55
3.65
773 4874_A
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Revision history
STC03D E220HV
4
Table 6.
Revision history
Document revision history
Revision 1 2 First release. Document status promoted from preliminary data to datasheet. Changes
Date 27-Nov-2006 19-May-2008
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STC03DE220HV
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