STB185N55F3 STP185N55F3
N-channel 55V - 3.2m - 120A - D2PAK/TO-220 STripFETTM Power MOSFET
Features
Type STB185N55F3 STP185N55F3 VDSS 55V 55V RDS(on) 3.5m 3.8m ID 120A
(1) (1)
Pw 330W 330W
120A
1. Value limited by wire bonding
Ultra low on-resistance 100% avalanche tested
TO-220
1
3 2
3 1
D2PAK
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique "single feature sizeTM" strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
Figure 1.
Internal schematic diagram
Applications
Switching applications Automotive
Table 1.
Device summary
Order codes Marking 185N55F3 185N55F3 Package D2PAK TO-220 Packaging Tape & reel Tube
STB185N55F3 STP185N55F3
June 2007
Rev 2
1/14
www.st.com 14
Contents
STB185N55F3 - STP185N55F3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6
3 4 5 6
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STB185N55F3 - STP185N55F3
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID (1) ID (1) IDM (2) PTOT
Absolute maximum ratings
Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 55 20 120 120 480 330 2.2 10 1000 -55 To 175 Unit V V A A A W W/C V/ns mJ C
dv/dt (3) EAS (4) Tj Tstg
Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature storage temperature
1. Current limited by package. 2. Pulse width limited by safe operating area. 3. ISD < 120A, di/dt < 900A/s, VDD < V(BR)DSS, TJ < TJMAX 4. Starting Tj=25C, Id=60A, Vdd=40V (see Figure 16 and Figure 17)
Table 2.
Thermal data
TO-220 D˛PAK 0.45 62.5 -300 -50 Unit C/W C/W C/W C
Rthj-case Rthj-a Rthj-pcb(1) Tl
Thermal resistance junction-case Thermal resistance junction-ambient max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose
1. When mounted on 1 inch˛ FR4 2oz Cu.
3/14
Electrical characteristics
STB185N55F3 - STP185N55F3
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 250A, VGS= 0 VDS= max rating, VDS= max rating,@125C Min. 55 10 100
200
Typ.
Max.
Unit V A A nA V m m
Gate body leakage current VGS = 20V (VDS = 0) Gate threshold voltage Static drain-source on resistance VDS= VGS, ID = 250A VGS= 10V, ID= 60A D˛PAK TO-220 2 2.9 3.2
4 3.5 3.8
Table 4.
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V , ID = 60A Min. Typ. 150 6800 1450 15 25 150 110 50 100 30 26 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDS = 25V, f = 1MHz, VGS = 0 VDD = 27.5V, ID = 60A RG = 4.7 VGS = 10V (see Figure 13, Figure 18) VDD = 44V, ID = 120A, VGS = 10V, (see Figure 14)
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%.
4/14
STB185N55F3 - STP185N55F3
Electrical characteristics
Table 5.
Symbol ISD ISDM(1) VSD(2) t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VGS=0 ISD=120A, di/dt = 100A/s, VDD=35V, Tj=150C (see Figure 15) 60 0.11 3.5 Test conditions Min. Typ. Max. 120 480 1.5 Unit A A V ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
5/14
Electrical characteristics
STB185N55F3 - STP185N55F3
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area Figure 3. Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
Static drain-source on resistance
6/14
STB185N55F3 - STP185N55F3 Figure 8. Gate charge vs gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
7/14
Test circuit
STB185N55F3 - STP185N55F3
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
8/14
STB185N55F3 - STP185N55F3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
9/14
Package mechanical data
STB185N55F3 - STP185N55F3
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 T YP M AX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
10/14
STB185N55F3 - STP185N55F3
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
11/14
Packaging mechanical data
STB185N55F3 - STP185N55F3
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0795 0.960 1.039 3. 937 1.197 BULK QTY 1000 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
12/14
STB185N55F3 - STP185N55F3
Revision history
6
Revision history
Table 6.
Date 31-Jan-2007 28-Jun-2007
Revision history
Revision 1 2 First version Complete version Changes
13/14
STB185N55F3 - STP185N55F3
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
14/14
|
