STD65N55F3
N-channel 55V - 6.5m - 80A - DPAK STripFETTM Power MOSFET
Features
Type STD65N55F3
VDSS 55V
RDS(on) <8.5m
ID 80A
Pw 110W
3 1
Standard threshold drive 100% avalanche tested
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "Single Feature SizeTM" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
DPAK
Internal schematic diagram
Applications
Switching application Automotive
Order code
Part number STD65N55F3 Marking 65N55F3 Package DPAK Packaging Tape & reel
May 2007
Rev 3
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Contents
STD65N55F3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6
3 4 5 6
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STD65N55F3
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM (1) PTOT
Absolute maximum ratings
Parameter Drain-source voltage (VGS=0) Gate-Source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 55 20 80 56 320 110 0.73 11 390 -55 to 175 Unit V V A A A W W/C V/ns mJ C
dv/dt (2) EAS (3) Tj Tstg
Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area 2. ISD 65A, di/dt 300A/s, VDD < V(BR)DSS. Tj < Tjmax 3. Starting Tj = 25C, Id = 32A, Vdd = 25V
Table 2.
Symbol Rthj-case
Thermal resistance
Parameter Thermal resistance junction-case max Value 1.36 50 Unit C/W C/W
Rthj-pcb (1) Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 1inch², 2oz Cu.
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Electrical characteristics
STD65N55F3
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS I DSS IGSS VGS(th) RDS(on)
Static
Parameter Drain-source breakdown Voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating,Tc = 125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 32A 2 6.5 Min. Typ. Max. Unit 55 10 100
200
V A A nA V m
4 8.5
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V, ID=32A Min Typ. Max. Unit 50 2200 500 25 33.5 12.5 9.5 45 S pF pF pF nC nC nC
VDS =25V, f=1MHz, VGS=0
VDD=27V, ID = 65A VGS =10V (see Figure 15)
1. Pulsed: pulse duration = 300s, duty cycle 1.5%
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STD65N55F3
Electrical characteristics
Table 5.
Symbol td(on) tr td(off) tf
Switching on/off (inductive load)
Parameter Turn-on delay time Rise time Test conditions VDD=27V, ID= 32A, RG=4.7, VGS=10V (see Figure 14) VDD=27V, ID= 32A, RG=4.7, VGS=10V (see Figure 14) Min. Typ. 20 50 Max. Unit ns ns
Turn-off delay time Fall time
35 11.5
ns ns
Table 6.
Symbol ISD I SDM VSD trr Q rr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed)(1) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=65A, VGS=0 ISD=65A, di/dt =100A/s, VDD=25V, Tj=150C (see Figure 16) 47 87 3.7 Test conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns nC A
1. Pulsed: pulse duration = 300s, duty cycle 1.5%
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Electrical characteristics
STD65N55F3
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Normalized BVDSS vs temperature
Figure 6.
Static drain-source on resistance
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STD65N55F3 Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STD65N55F3
3
Test circuit
Figure 13. Unclamped inductive waveform
Figure 12. Unclamped inductive load test circuit
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load Figure 17. Switching time waveform switching and diode recovery times
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STD65N55F3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STD65N55F3
DPAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch
0068772-F
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STD65N55F3
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 16.4 50 22. 4 18. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0. 795 0.645 0.724 1. 968 0.881 BULK QTY 2500 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6. 8 10.4 1. 5 1. 5 1.65 7. 4 2.55 3. 9 7. 9 1. 9 40
15.7 16.3
inch MIN. MAX . 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0. 059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1. 574
0.618 0.641
MAX . 10. 6 12. 1 1.6 1. 85 7.6 2. 75 4.1 8.1 2.1
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Revision history
STD65N55F3
6
Revision history
Table 7.
Date 08-Feb-2007 22-Feb-2007 11-May-2007
Revision history
Revision 1 2 3 First release Description has been changed Improved current values Changes
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STD65N55F3
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