STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N
N-channel 650 V, 0.43 , 9 A MDmeshTM II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
Features
Type STD10NM65N STF10NM65N STP10NM65N STU10NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 < 0.48 < 0.48 < 0.48 ID
2 3
3 1 2
9A 9 A(1) 9A 9A
1
TO-220
IPAK
1. Limited only by maximum temperature allowed
3 1
3 1 2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1.
TO-2 20F P
DP AK
Application
Internal schematic diagram
Switching applications
Description
This series of devices implements the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Marking 10NM65N 10NM65N 10NM65N 10NM65N Package DPAK TO-220FP TO-220 IPAK Packaging Tape & reel Tube Tube Tube
Order codes STD10NM65N STF10NM65N STP10NM65N STU10NM65N
October 2008
Rev 3
1/17
www.st.com 17
Contents
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ... 7
3 4 5 6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value Parameter TO-220/IPAK TO-220FP DPAK 650 25 9 5.7 36 90 15 --55 to 150 150 2500 9(1) 5.7(1) 36(1) 25 Unit
VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj
Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25 C) Storage temperature Max. operating junction temperature
V V A A A W V/ns V C C
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 9 A, di/dt 400 A/s, VDD = 80% V(BR)DSS
Table 3.
Symbol Rthj-case Rthj-pcb Rthj-amb Tl
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Thermal resistance junction-amb max Maximum lead temperature for soldering purpose -62.5 TO-220 IPAK 1.38 -100 300 50 -DPAK TO-220FP 5 -62.5 Unit C/W C/W C/W C
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAS, VDD= 50 V) Max value 2.5 200 Unit A mJ
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Electrical characteristics
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
2
Electrical characteristics
(TCASE=25 C unless otherwise specified) Table 5.
Symbol V(BR)DSS dv/dt (1) IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDD= 520 V, ID= 9 A, VGS= 10 V VDS = max rating VDS = max rating, @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 4.5 A 2 3 0.43 Min. 650 25 1 100 100 4 0.48 Typ. Max. Unit V V/ns A A nA V
1. Characteristics value at turn off on inductive load
Table 6.
Symbol gfs (1) Ciss Coss Crss Coss eq.(2) Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS=15 V, ID = 4.5 A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 7.5 850 53 4 90 25 14 4 Max. Unit S pF pF pF
VGS = 0, VDS = 0 to 520 V VDD = 520 V, ID = 9 A, VGS = 10 V, (see Figure 19)
pF nC nC nC
1. Pulsed: pulse duration = 300 s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 325 V, ID = 4.5 A RG = 4.7 VGS = 10 V (see Figure 18) Min Typ 12 8 50 20 Max Unit ns ns ns ns
Table 8.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, VGS = 0 ISD = 9 A, di/dt = 100 A/s VDD = 100 V (see Figure 20) ISD = 9 A, di/dt = 100 A/s VDD = 100 V, Tj = 150 C (see Figure 20) 330 3 19 430 4 19 Test conditions Min Typ Max 9 36 1.3 Unit A A V ns C A ns C A
VSD (2) t rr Qrr IRRM t rr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Safe operating area for DPAK/IPAK Figure 7.
Thermal impedance for DPAK/IPAK
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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Figure 8. Output characteristics Figure 9.
Electrical characteristics Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate source voltage Figure 13. Capacitance variations
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Electrical characteristics
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Figure 15. Normalized on resistance vs temperature
Figure 14. Normalized gate threshold voltage vs temperature
Figure 16. Source-drain diode forward characteristics
Figure 17. Normalized BVDSS vs temperature
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Test circuit
3
Test circuit
Figure 19. Gate charge test circuit
Figure 18. Switching times test circuit for resistive load
Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
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Package mechanical data
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Package mechanical data
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
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G
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Package mechanical data
TO-251 (IPAK) mechanical data
mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0. 80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2. 28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60
0068771_H
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Package mechanical data
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
TO-252 (DPAK) mechanical data
DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0. 20 8o 4.40 9.35 1 2. 80 0. 80 1 6.40 4. 70 2. 28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5. 10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Package mechanical data
5
Package mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 16.4 50 22. 4 18. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0. 795 0.645 0.724 1. 968 0.881 BULK QTY 2500 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6. 8 10.4 1. 5 1. 5 1.65 7. 4 2.55 3. 9 7. 9 1. 9 40
15.7 16.3
inch MIN. MAX . 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0. 059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1. 574
0.618 0.641
MAX . 10. 6 12. 1 1.6 1. 85 7.6 2. 75 4.1 8.1 2.1
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Revision history
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
6
Revision history
Table 9.
Date 26-Oct-2007 07-Feb-2008 14-Oct-2008
Document revision history
Revision 1 2 3 Initial release. Document status promoted from preliminary data to datasheet. Table 4: Avalanche characteristics has been corrected. Changes
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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
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