STW55NM60ND
N-channel 600 V - 0.047 - 51 A TO-247 FDmeshTM II Power MOSFET (with fast diode)
Features
Type STW55NM60ND
VDSS (@TJmax) 650 V
RDS(on) (max) < 0.060
ID 51 A
The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities
TO-247
2 1
3
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecover y body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Table 1.
Device summary
Marking 55NM60ND Package TO-247 Packaging Tube
Order code STW55NM60ND
April 2008
Rev 2
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www.st.com 12
Contents
STW55NM60ND
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . ..... 6
3 4 5
Test circuits
. . .. . .. . .. . .. . .. . .. . .. . .. . .. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STW55NM60ND
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 600 25 51 32 204 350 40 55 to 150 150 Unit V V A A A W V/ns C C
PTOT dv/dt(2) Tstg Tj
2.
1. Pulse width limited by safe operating area ISD 51 A, di/dt 600 A/s, VDD = 80% V(BR)DSS
Table 3.
Symbol Rthj-case Rthj-amb Tl
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.36 50 300 Unit C/W C/W C
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (star ting Tj = 25 C, ID = IAS, VDD = 50 V) Max value 15 850 Unit A mJ
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Electrical characteristics
STW55NM60ND
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS dv/dt (1) IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDD=480 V, ID= 51 A, VGS =10 V VDS = Max rating VDS = Max rating @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 25.5 A 3 4 0.047 Min. 600 30 1 100 100 5 0.060 Typ. Max. Unit V V/ns A A nA V
1. Characteristic value at turn off on inductive load
Table 6.
Symbol gfs (1) Ciss Coss Crss Coss eq.(2) td(on) tr td(off) tf Qg Qgs Qgd Rg
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS = 15 V, ID = 25.5 A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 45 5800 300 30 900 33 68 188 96 190 30 90 2.5 Max. Unit S pF pF pF
VGS = 0, VDS = 0 to 480 V VDD = 300 V, ID = 25.5 A RG = 4.7 , VGS = 10 V (see Figure 19), (see Figure 14) VDD = 480 V, ID = 51 A, VGS = 10 V, (see Figure 15) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV Open drain
pF ns ns ns ns nC nC nC
1. Pulsed: pulse duration= 300 s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STW55NM60ND
Electrical characteristics
Table 7.
Symbol ISD ISDM (1) VSD (2) t rr Qrr IRRM t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 51 A, VGS = 0 ISD = 51 A, VDD = 60 V di/dt = 100 A/s (see Figure 16) ISD = 51 A,VDD = 60 V di/dt = 100 A/s, Tj = 150 C (see Figure 16) 200 1.8 18 280 3.4 24 Test conditions Min. Typ. Max. 51 204 1.3 Unit A A V ns C A ns C A
1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%.
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Electrical characteristics
STW55NM60ND
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area Figure 3. Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
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STW55NM60ND Figure 8. Gate charge vs gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
Figure 13. Normalized BVDSS vs temperature
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Test circuits
STW55NM60ND
3
Test circuits
Figure 15. Gate charge test circuit
Figure 14. Switching times test circuit for resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
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STW55NM60ND
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
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Package mechanical data
STW55NM60ND
TO-247 Mechanical data
mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S
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STW55NM60ND
Revision history
5
Revision history
Table 8.
Date 16-Nov-2007 22-Apr-2008
Document revision history
Revision 1 2 First release. Document status promoted from preliminary data to datasheet. Changes
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STW55NM60ND
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