SMM4F
High junction temperature TransilTM
Features
Typical peak pulse power: 400 W (10/1000 s) 2.4 kW (8/20 s) Stand off voltage range: from 5 V to 33 V Unidirectional types Low leakage current: 0.2 A at 25 C 1 A at 85 C Operating Tj max: 175 C JEDEC registered package outline RoHS package Halogen free molding compound
K STmite flat (DO222-AA) A
Complies with the following standards
IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G-Method 3015-7: class3 25 kV (human body model)
Description
The SMM4F Transil series has been designed to protect sensitive equipment against electro-static discharges according to IEC 61000-4-2, MIL STD 883 Method 3015, and electrical over stress such as IEC 61000-4-4 and 5. They are generally for surges below 400 W 10/1000 s. This planar technology makes it compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time. Their low clamping voltages provide a better safety margin to protect sensitive circuits with extended life time expectancy. Packaged in STmite flat, this minimizes PCB space consumption (footprint in accordance with IPC 7531 standard).
TM: Transil is a trademark of STMicroelectronics
December 2007 Rev 2 1/10
www.st.com 10
Characteristics
SMM4F
1
Characteristics
Table 1.
Symbol VPP PPP P IFSM Tstg Tj TL
Absolute ratings (Tamb = 25 C)
Parameter Peak pulse voltage (IEC 61000-4-2 contact discharge) Peak pulse power dissipation
(1)
Value 30 400 2.5 30 -65 to +175 -55 to +175 260
Unit kV W W A C C C
Tj initial = Tamb Tamb = 125 C tp = 10 ms Tj initial = Tamb
Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Storage temperature range Operating junction temperature range
Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol Rth(j-l) Rth(j-a)
Thermal resistances
Parameter Junction to leads Junction to ambient on PCB with recommended pad layout Value 20 C/W 250 Unit
Table 3.
Symbol VRM VBR IR VCL IRM IPP T VF RD
Electrical characteristics - parameter definitions (Tamb = 25 C)
Parameter Stand-off voltage Breakdown voltage Breakdown current Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Forward voltage drop Dynamic resistance
IPP VCL VBR VRM IRM IR VF V IF I
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SMM4F Table 4. Electrical characteristics - parameter values (Tamb = 25 C)
IRM max@VRM Type 25 C 85 C A SMM4F5.0A SMM4F6.0A SMM4F6.5A SMM4F8.5A SMM4F10A SMM4F12A SMM4F13A SMM4F15A SMM4F18A SMM4F20A SMM4F24A SMM4F26A SMM4F28A SMM4F33A 10 10 10 10 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 50 50 50 50 1 1 1 1 1 1 1 1 1 1 V min VBR @IR(1) typ max V mA
Characteristics
VCL @IPP RD(2) VCL @IPP RD(2) 10/1000 s 10/1000 s 8/20 s 8/20 s max V 9.2 A 43.5 0.047 0.076 0.093 0.141 0.187 0.259 0.309 0.335 0.436 0.600 1.00 1.18 1.34 1.76 max V A 0.04 0.04 0.04 0.07 0.09 0.12 0.13 0.19 0.27 0.33 0.47 0.51 0.62 0.87
T(3) max 10-4/C 5.7 5.9 6.1 7.3 7.8 8.3 8.4 8.8 9.2 9.4 9.6 9.7 9.8 10.0
5.0 6.46 6.80 7.14 10
13.4 174 13.7 170 14.5 160 19.5 124 21.7 106 25.3 91 27.2 85 32.5 71 39.3 59 42.8 54 50 46
6.0 6.65 7.00 7.35 10 10.3 38.8 6.5 7.13 7.50 7.88 10 11.2 37.5 8.5 9.5 10.0 10.5 1 1 1 1 1 1 1 1 1 1 1 14.4 27.7 17.0 23.5 19.9 20.1 21.5 18.6 24.4 16.4 29.2 14.0 32.4 12.0 38.9 42.1 45.4 53.3 9.5 9.0 8.0 7.0
10 11.4 12.0 12.6 12 13.3 14.0 14.7 13 14.3 15.0 15.8 15 17.1 18.0 18.9 18 20.9 22.0 23.1 20 22.8 24.0 25.2 24 26.6 28.01 29.4 26 28.5 30.0 31.5 28 31.4 33.0 34.7 33 37.1 39.0 41.0
53.5 43 59.0 39 69.7 33
1. Pulse test: tp <50ms. 2. To calculate maximum clamping voltage at other surge currents, use the following formula VCLmax = RD x IPP + VBRmax 3. To calculate VBR versus junction temperature, use the following formula: VBR @ Tj = VBR @ 25 C x (1 + T x (Tj - 25))
Figure 1.
Definition of IPP pulse
%IPP 100
Repetitive peak pulse current tr = rise time (s) tp = pulse duration time (s)
50
0 tr tp
t
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Characteristics
SMM4F
Figure 2.
Peak power dissipation versus initial junction temperature
Figure 3.
Peak pulse power versus exponential pulse duration (Tj initial = 25 C)
1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
PPP[ T j init ia l ] / PPP[ T j init ial = 2 5 C]
10.0
PPP(kW)
Tj initial = 25 C
1.0
Tj initial (C)
0.1
tp(ms)
125 150 175 200
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
0
25
50
75
100
Figure 4.
Clamping voltage versus peak pulse current (exponential waveform, maximum values)
IPP(A)
1000
Tj initial=25 C SMM4F5.0A SMM4F15A
100
SMM4F24A
SMM4F33A
10
1
tp = 8/20 s tp = 10/1000 s
VCL(V)
0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
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SMM4F
Characteristics
Figure 5.
Junction capacitance versus reverse applied voltage (typical values)
Figure 6.
Peak forward voltage drop versus peak forward current (typical values)
10000
C(pF)
F=1 MHz VOSC=30 mVRMS Tj=25 C
1.0E+02
IFM(A)
1.0E+01
1000
SMM4F5.0A
Tj =125 C
SMM4F15A SMM4F24A
1.0E+00
100
SMM4F33A
1.0E-01
Tj =25 C
VR(V)
10 1 10 100
VFM(V)
1.0E-02 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 7.
Relative variation of thermal impedance junction to ambient versus pulse duration (printed ciruit board FR4, SCu = 1 cm2)
Figure 8.
Thermal resistance junction to ambient versus copper surface under each lead (printed circuit board FR4, eCu = 35 m)
1.00
Zth(j-a)/Rth(j-a)
On recommended pad layout
200 180 160
Rth(j-a)(C/W)
0.10
140 120 100 80
0.01
tp(S)
0.00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
60 40 0.0 0.2 0.4 0.6 0.8
SCU(cm2)
1.0 1.2 1.4 1.6 1.8 2.0 2.2
Figure 9.
Leakage current versus junction temperature (typical values)
1.E+04
IR(nA)
1.E+03
VBR11.7V
1.E+02
1.E+01
VBR>11.7V
1.E+00
Tj(C)
1.E-01 25 50 75 100 125 150
VR=VRM
175
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Ordering information scheme
SMM4F
2
Ordering information scheme
Figure 10. Ordering information scheme
SM
Surface Mount Package M = STmite package Surge rating 4F = 400 W in flat package Stand off voltage example - 12 = 12 V Type A = Unidirectional
M 4F
xx
A
-
TR
Packaging TR = Tape and reel
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SMM4F
Package information
3
Package information
Case: JEDEC DO-222AA molded plastic over Planar junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: For unidirectional types the band indicates cathode. Flammability: Epoxy is rated UL94V-0 RoHS package
In order to meet environmental requirements, ST (also) offers these devices in ECOPACK packages. ECOPACK packages are Lead-free. The category of second level Interconnect is marked on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 5. STmite flat dimensions
Dimensions Ref. Millimeters Min.
E1 L L1
Inches Min. Typ. Max.
Typ. 0.85 0.55 0.85 0.15 1.90 3.80 2.95 0.55 2.40 0.60 0.35
Max. 0.95 0.65 1.00 0.25 2.05 3.90 3.10 0.80 2.60 0.75 0.50
A
L2
0.80 0.40 0.70 0.10 1.75 3.60 2.80 0.50 2.10 0.45 0.20
0.031 0.033 0.037 0.016 0.022 0.026 0.027 0.033 0.039 0.004 0.006 0.009 0.069 0.075 0.081 0.142 0.150 0.154 0.110 0.116 0.122 0.020 0.022 0.031 0.083 0.094 0.102 0.018 0.024 0.030 0.008 0.014 0.020
b
D b b2
b2 c D E E1 L L1 L2 L3
E
L3
c A
Figure 11. STmite flat footprint dimensions
0.85 0.63
(0.033) (.025)
Figure 12. Marking information
2.00
(0.079)
0.65
(.026)
Cathode bar (unidirectional de vices onl y )
(0.026)
0.65
(0.037)
0.95
1.95
(0.077)
4.13
(0.163)
y ww xxx
Y: Year WW: week XXX: Marking
millimeters
(inches)
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Package information Table 6. Marking
Type SMM4F5.0A-TR SMM4F6.0A-TR SMM4F6.5A-TR SMM4F8.5A-TR SMM4F10A-TR SMM4F12A-TR SMM4F13A-TR SMM4F15A-TR SMM4F18A-TR SMM4F20A-TR SMM4F24A-TR SMM4F26A-TR SMM4F28A-TR SMM4F33A-TR Marking 4UA 4UB 4UC 4UD 4UE 4UF 4UG 4UH 4UJ 4UK 4UM 4UN 4UO 4UQ
SMM4F
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SMM4F
Ordering information
4
Ordering information
Table 7. Ordering information
Marking See Table 6. Package STmite flat Weight 16.7 mg Base qty 12000 Delivery mode Tape and reel
Order code(1) SMM4FxxA-TR
1. xx indicates stand-off voltage
5
Revision history
Table 8.
Date 29-Nov-2007 19-Dec-2007
Document revision history
Revision 1 2 First issue. Updated IPP and RD parameters in columns 10 and 11 of Table 4. Changes
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SMM4F
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