STB14NM65N, STF14NM65N STI14NM65N,STP14NM65N,STW14NM65N
N-channel 650 V, 0.33 , 12 A MDmeshTM II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
Type STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.38 < 0.38 < 0.38 < 0.38 < 0.38 ID
3
12 A 12 A 12 A(1) 12 A 12 A
1
2
3 12
TO-220
3 1
I²PAK
D²P A K
3
1. Limited only by maximum temperature allowed
2
3
1
2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-247
1
TO-220FP
Application
Figure 1.
Internal schematic diagram
Switching applications
Description
This series of devices is designed using the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary
Marking 14NM65N 14NM65N 14NM65N 14NM65N 14NM65N Package I²PAK D²PAK TO-220FP TO-220 TO-247 Packaging Tube Tape and reel Tube Tube Tube
Order codes STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N
October 2008
Rev 2
1/18
www.st.com 18
Contents
STB/F/I/P/W14NM65N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 7
3 4 5 6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/18
STB/F/I/P/W14NM65N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value Parameter TO-220, TO-247 D²PAK, I²PAK Unit TO-220FP V V 12(1) 7.6 (1) 48(1) 30 15 --55 to 150 150 2500 A A A W V/ns V C C
VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg TJ
Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Storage temperature Max. operating junction temperature 12 7.6 48 125
650 25
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 12 A, di/dt 400 A/s, VDD =80% V(BR)DSS
Table 3.
Symbol
Thermal data
Value Parameter TO-220 I²PAK D²PAK 1 62.5 ---30 50 -TO-247 TO-220FP 4.2 62.5 -C/W C/W C/W Thermal resistance junction-case max Thermal resistance junction-amb max Thermal resistance junction-pcb max Maximum lead temperature for soldering purposes Unit
Rthj-case Rthj-amb Rthj-pcb
Tl
300
C
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ=25 C, ID=IAS, VDD= 50 V) Max value 3 300 Unit A mJ
3/18
Electrical characteristics
STB/F/I/P/W14NM65N
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS dv/dt (1) IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDD = 520 V, ID=12 A, VGS=10 V VDS = Max rating VDS = Max rating, @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 6 A 2 3 Min. 650 30 1 100 100 4 Typ. Max. Unit V V/ns A A nA V
0.330 0.380
1. Characteristic value at turn off on inductive load
Table 6.
Symbol gfs (1) Ciss Coss Crss Coss eq(2) Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS=15 V, ID = 6A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 10 1300 90 8 150 45 7 25 Max. Unit S pF pF pF pF nC nC nC
VGS = 0, VDS = 0 to 520 V VDD = 520 V, ID = 12 A, VGS = 10 V, (see Figure 19)
1. Pulsed: pulse duration = 300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
4/18
STB/F/I/P/W14NM65N
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD =325 V, ID = 6 A RG = 4.7 VGS = 10 V (see Figure 18) Min Typ 11 13 55 20 Max Unit ns ns ns ns
Table 8.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, VGS = 0 ISD = 12 A, di/dt = 100 A/s VDD = 100 V (see Figure 20) ISD = 12 A, di/dt = 100 A/s VDD = 100 V, TJ = 150 C (see Figure 20) 390 5 25 530 7 25 Test conditions Min Typ Max 12 48 1.3 Unit A A V ns C A ns C A
VSD (2) t rr Qrr IRRM t rr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
5/18
Electrical characteristics
STB/F/I/P/W14NM65N
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
6/18
STB/F/I/P/W14NM65N Figure 6. Safe operating area for TO-247 Figure 7.
Electrical characteristics Thermal impedance for TO-247
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
7/18
Electrical characteristics
STB/F/I/P/W14NM65N
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Figure 14. Normalized gate threshold voltage vs temperature
Figure 15. Normalized on resistance vs temperature
Figure 16. Source-drain diode forward characteristics
Figure 17. Normalized BVDSS vs temperature
8/18
STB/F/I/P/W14NM65N
Test circuit
3
Test circuit
Figure 19. Gate charge test circuit
Figure 18. Switching times test circuit for resistive load
Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/18
Package mechanical data
STB/F/I/P/W14NM65N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
10/18
STB/F/I/P/W14NM65N
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
11/18
Package mechanical data
STB/F/I/P/W14NM65N
TO-220FP mechanical data
mm. Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .038 5 0.114 0.626 0.354 0.118 Typ. Max. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø
A
B
L3 L6 L7
F1 F
D
G1
E H
F2
L2
L5
123
L4
12/18
G
STB/F/I/P/W14NM65N
Package mechanical data
TO-262 mechanical data
mm Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050
inch Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055
13/18
Package mechanical data
STB/F/I/P/W14NM65N
D²PAK (TO-263) mechanical data
mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334
inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8
0079457_M
14/18
STB/F/I/P/W14NM65N
Package mechanical data
TO-247 Mechanical data
mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S
15/18
Packaging mechanical data
STB/F/I/P/W14NM65N
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0795 0.960 1.039 3. 937 1.197 BULK QTY 1000 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
16/18
STB/F/I/P/W14NM65N
Revision history
6
Revision history
Table 9.
Date 15-Feb-2008 14-Oct-2008
Document revision history
Revision 1 2 First release Table 4: Avalanche characteristics has been corrected. Changes
17/18
STB/F/I/P/W14NM65N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
18/18
|
