BUL310
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s s s
s s s
STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC LARGE RBSOA TO-220
3 1 2
APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS
s
DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l VC ES V CE O VE B O IC IC M IB IB M Ptot Ts t g Tj Parameter C o l l e c to r- E m it t e r Voltage (V B E = 0) C o l l e c to r- E m it t e r Voltage (I B = 0) E m i t te r- B a s e Voltage (I C = 0) C o l l e c to r Current C o l l e c to r Peak Current (t p <5 ms) B a s e Current B a s e Peak Current (t p <5 ms) T o t a l Dissipation at Tc = 25 o C S t o r a g e Temperature M a x . Operating Junction Temperature Value 1000 500 9 5 10 3 4 75 - 6 5 to 150 150 U n it V V V V A A A W
o o
C C
February 2002
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THERMAL DATA
R t h j - c a se R t hj -amb T h e r m a l Resistance Junction-Case T h e r m a l Resistance Junction-Ambient Max Max 1.65 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l IC ES I CE O Pa r a m e t e r C o l l e c to r Cut-off C u r r e n t (V B E = 0) C o l l e c to r Cut-off C u r r e n t (I B = 0) T e s t Conditions V C E = 1000 V V C E = 1000 V V C E = 500 V I C = 100 mA L= 25 mH 500 T j = 125 o C Min. Typ. Max. 100 500 250 U n it A A A V
V CE O ( s u s ) C o l l e c to r- E m it t e r S u s t a i n in g Voltage ( I B = 0) VEBO VC E ( s a t ) E m i t te r- B a s e Voltage ( I C = 0) C o l l e c to r- E m it t e r S a t u r a t io n Voltage B a s e - E m it t e r S a t u r a t io n Voltage D C Current Gain I N D U C T I V E LOAD S t o r a g e Time F a l l Time I N D U C T I V E LOAD S t o r a g e Time F a l l Time
I E = 10 mA IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A IC = 3 A I C = 10 mA IC = 3 A IC = 2 A V B E ( o f f ) = -5 V V C L = 250 V (s e e figure 1) IC = 2 A V B E ( o f f ) = -5V V C L = 250 V T j = 125 o C I B = 0.2 A I B = 0.4 A I B = 0.6 A I B = 0.2 A I B = 0.4 A I B = 0.6 A V CE = 5 V V C E = 2.5 V I B 1 = 0.4 A RBB = 0 L = 200 H I B 1 = 0.4 A RBB = 0 L = 200 H (see figure 1)
9 0.5 0.7 1.1 1 1.1 1.2 10 6 10 1.2 80 14 1.9 160
V V V V V V V
V B E (s at )
hFE
ts tf
s ns
ts tf
1.8 150
s ns
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
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BUL310
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Load Fall Time
Inductive Load Storage Time
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BUL310
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit
(1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier
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BUL310
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
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BUL310
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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