BUL58D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
3 1 2
TO-220
APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES
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INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION The BUL58D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS
Symbol V CE S VC EO VEBO IC I CM IB IBM P tot Tstg Tj P a r am e t e r C ol l e c t o r- E m i t t er Voltage (V B E = 0) C ol l e c t o r- E m i t t er Voltage (I B = 0) Em i tt e r -B a s e Voltage (I C = 0) C ol l e c t o r Current C ol l e c t o r Peak Current (t p < 5 ms) Ba s e Current Ba s e Peak Current (t p < 5 ms) T ot a l Dissipation at T c = 25 o C St o r a ge Temperature M a x. Operating Junction Temperature Value 800 450 9 8 16 4 8 85 - 65 to 150 150 U ni t V V V A A A A W
o o
C C
June 2001
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BUL58D
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m al Resistance Junction-Case T h e r m al Resistance Junction-Ambient Max Max 1.47 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l I CE S IC EO VC E O ( s u s ) VEBO V C E(s at ) V B E (s at ) h FE P a r a m et e r C o l l e c t or Cut-off C u r re n t (V B E = 0) C o l l e c t or Cut-off C u r re n t (I B = 0) C o l l e c t or - E m i t te r S u s t ai n i n g Voltage E m i t t e r- B a s e Voltage ( I C = 0) C o l l e c t or - E m i t te r S a t u ra t i o n Voltage B a s e -E m i t t e r S a t u ra t i o n Voltage D C Current Gain I N D U C T I V E LOAD S t o ra g e Time F a l l Time I N D U C T I V E LOAD S t o ra g e Time F a l l Time D i o d e Forward Voltage T e s t Conditions V C E = 800 V V C E O = 800 V V C E = 450 V I C = 100 mA I E = 10 mA IC = 4 A IC = 5 A IC = 4 A IC = 5 A I B = 0.8 A IB = 1 A I B = 0.8 A IB = 1 A 5 38 1 90 1.5 180 3 1.8 180 s ns s ns V L = 25 mH 450 9 1.5 2 1.3 1.5 T j = 125 o C Min. Typ. M a x. 200 500 200 Unit A A A V V V V V V
IC = 5 A VCE = 5 V I C = 500 mA V C E = 5 V IC = 2 A V B E ( o f f ) = -5 V V C L = 250 V IC = 2 A V B E ( o f f ) = -5 V V C L = 250 V T j = 125 o C IC = 3 A I B 1 = 0.4 A RBB = 0 L = 200 H I B 1 = 0.4 A RBB = 0 L = 200 H
ts tf ts tf Vf
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
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BUL58D
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
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BUL58D
Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit
(1) Fast electronic switch (2 ) Non-inductive Resistor (3 ) Fast recovery rectifier
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BUL58D
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
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BUL58D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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