BUL128
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s s s
s
STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
3 1 2
APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CE S VC EO VEBO IC I CM IB IBM Ptot Tstg Tj Parameter C o ll e c t o r -E m i t t e r Voltage (V B E = 0) C o ll e c t o r -E m i t t e r Voltage (I B = 0) Em it t e r -B a s e Voltage (I C = 0) C o ll e c t o r Current C o ll e c t o r Peak Current (t p < 5 ms) Ba s e Current Ba s e Peak Current (t p < 5 ms) T o t a l Dissipation at T c = 25 o C St o r a g e Temperature M a x . Operating Junction Temperature Value 700 400 9 4 8 2 4 70 - 6 5 to 150 150 U ni t V V V A A A A W
o o
C C
November 2001
1/7
BUL128
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m a l Resistance Junction-Case T h e r m a l Resistance Junction-Ambient Max Max 1.78 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CE S VEBO Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (V B E = -1.5 V) E m i t t e r- B a s e Voltage ( I C = 0) T e s t Conditions V C E = 700 V V C E = 700 V I E = 10 mA I C = 100 mA L = 25 mH T j = 125 o C 9 400 Min. Typ. Ma x. 10 0 50 0 Unit A A V V
V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage ( I B = 0) IC EO V C E(s at ) C o l l e c t o r Cut-Off C u r r e n t (I B = 0) C o l l e c t o r- E m i t te r S a t u r a t io n Voltage
V C E = 400 V IC IC IC IC = = = = 0.5 A 1A 2.5 A 4A IB IB IB IB = = = = 0.1 A 0.2 A 0.5 A 1A
25 0 0.7 1 1.5 0.5 1.1 1.2 1.3 10 14 25 IC = 2 A I B 2 = -0.4 A (see fig.2) I B 1 = 0.4 A RBB = 0 (see fig.1) 1.5 0.2 0.6 0.1 28 40 3 0.4 1 0.2
A V V V V V V V
V B E (s at )
B a s e - E m i tt e r S a t u r a t io n Voltage D C Current Gain
I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 mA IC = 2 A Group A Group B V C C = 125 V I B 1 = 0.4 A T p = 30 s IC = 2 A V B E ( o f f ) = -5 V V c l a m p = 200 V
I B = 0.1 A I B = 0.2 A I B = 0.5 A V CE = 5 V V CE = 5 V
hFE
ts tf ts tf
R E S I S T IV E LOAD S t o r a g e Time F a l l Time I N D U C T I V E LOAD S t o r a g e Time F a l l Time
s s s s
Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
2/7
BUL128
Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BUL128
Inductive Load Fall Time Inductive Load Storage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/7
BUL128
Figure 1: Inductive Load Switching Test Circuit.
1 ) Fast electronic switch 2 ) Non-inductive Resistor 3 ) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1 ) Fast electronic switch 2 ) Non-inductive Resistor
5/7
BUL128
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
6/7
BUL128
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
7/7
|
