BUL138
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s s s
s s
STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC
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APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FL YBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL138 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CE S VC EO VEBO IC I CM IB IBM P tot Tstg Tj P a r am e t e r C ol l e c t o r- E m i t t er Voltage (V B E = 0) C ol l e c t o r- E m i t t er Voltage (I B = 0) Em i tt e r -B a s e Voltage (I C = 0) C ol l e c t o r Current C ol l e c t o r Peak Current (t p < 5 ms) Ba s e Current Ba s e Peak Current (t p < 5 ms) T ot a l Dissipation at T c = 25 o C St o r a ge Temperature M a x. Operating Junction Temperature Value 800 400 9 5 10 2 4 80 - 65 to 150 150 U ni t V V V A A A A W
o o
C C
June 2001
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THERMAL DATA
R t h j - c a se R t hj- amb T h e r m al Resistance Junction-case T h e r m al Resistance Junction-ambient Max Max 1.56 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l I CE S IC EO VC E O ( s u s ) VEBO V C E(s at ) P a r a m et e r C o l l e c t or Cut-off C u r re n t (V B E = 0) C o l l e c t or Cut-off C u r re n t (I B = 0) C o l l e c t or - E m i t te r S u s t ai n i n g Voltage E m i t t e r- B a s e Voltage C o l l e c t or - E m i t te r S a t u ra t i o n Voltage T e s t Conditions V C E = 800 V V C E = 800 V V C E = 400 V I C = 100 mA I E = 10 mA IC IC IC IC IC = = = = = 1 2 3 4 5 A A A A A IB IB IB IB IB = = = = = 0.2 A 0.4 A 0.6 A 1A 1A L = 25 mH 400 9 0.5 0.7 1 1 0.7 1.1 1.3 1.5 8 10 2.4 I B 1 = 0.4 A RBB = 0 L = 200 H I B 1 = 0.4 A RBB = 0 L = 200 H 0.7 50 1 75 40 T j = 125 o C Min. Typ. M a x. 100 500 250 Unit A A A V V V V V V V V V V
V B E (s at )
B a s e -E m i t t e r S a t u ra t i o n Voltage D C Current Gain R E S I S T IV E LOAD S t o ra g e Time I N D U C T I V E LOAD S t o ra g e Time F a l l Time I N D U C T I V E LOAD S t o ra g e Time F a l l Time
IC = 1 A IC = 2 A IC = 3 A IC = 2 A I C = 10 mA IC = 2 A V C C = 250 V IC = 2 A V B E ( o f f ) = -5 V V C L = 250 V IC = 2 A V B E ( o f f ) = -5V V C L = 250 V T j = 125 o C
I B = 0.2 A I B = 0.4 A I B = 0.6 A V CE = 5 V VCE = 5 V I B 1 = -I B 2 = 0.4 A
h FE
ts ts tf ts tf
3.5 1.4 100
s s ns s ns
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
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DC Current Gain DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
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Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuits
1 ) Fast electronic switch 2 ) Non-inductive Resistor 3 ) Fast recovery rectifier
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BUL138
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
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BUL138
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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