M48T512Y M48T512V
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER SRAM
Features
Integrated ultra-low power SRAM, real-time clock, power-fail control circuit, battery, and crystal BCD coded year, month, day, date, hours, minutes, and seconds Automatic power-fail chip deselect and write protection Write protect voltages: (VPFD = Power-fail deselect voltage) M48T512Y: VCC = 4.5 to 5.5 V 4.2 V VPFD 4.5 V M48T512V: VCC = 3.0 to 3.6 V 2.7 V VPFD 3.0 V Conventional SRAM operation; unlimited write cycles Software controlled clock calibration for high accuracy applications 10 years of data retention and clock operation in the absence of power Pin and function compatible with industry standard 512 K x 8 SRAMS Self-contained battery and crystal in DIP package
PMDIP32 (PM) module
32 1
March 2008
Rev 5
1/22
www.st.com 1
Contents
M48T512Y, M48T512V
Contents
1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 2.2 2.3 READ mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 WRITE mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Data retention mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
Clock operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1 3.2 3.3 3.4 3.5 Reading the clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Setting the clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Stopping and starting the oscillator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Calibrating the clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 VCC noise and negative going transients . . . . . . . . . . . . . . . . . . . . . . . . . 14
4 5 6 7 8
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
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M48T512Y, M48T512V
List of tables
List of tables
Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 READ mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 WRITE mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Register map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Power down/up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Power down/up trip points DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 PMDIP32 32-pin plastic module DIP, package mechanical data. . . . . . . . . . . . . . . . . . . 19 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
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List of figures
M48T512Y, M48T512V
List of figures
Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 32-pin DIP connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 READ mode AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 WRITE AC waveforms, WRITE enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 WRITE AC waveforms, chip enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Crystal accuracy across temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Calibration waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Supply voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Power down/up mode AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 PMDIP32 32-pin plastic module DIP, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . 19
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M48T512Y, M48T512V
Description
1
Description
The M48T512Y/V TIMEKEEPER RAM is a 512 Kb x 8 non-volatile static RAM and realtime clock organized as 524,288 words by 8 bits. The special DIP package provides a fully integrated battery backup memory and real-time clock solution. The M48T512Y/V directly replaces industry standard 512 Kb x 8 SRAMs. It also provides the non-volatility of Flash without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. Figure 1. Logic diagram
VCC
19 A0-A18 W E G M48T512Y M48T512V
8 DQ0-DQ7
VSS
AI02262
Table 1.
A0-A18 DQ0-DQ7 E G W VCC VSS
Signal names
Address inputs Data inputs / outputs Chip enable input Output enable input WRITE enable input Supply voltage Ground
5/22
Description Figure 2. 32-pin DIP connections
A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 8 M48T512Y 9 M48T512V 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 W A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
M48T512Y, M48T512V
AI02263
Figure 3.
Block diagram
OSCILLATOR AND CLOCK CHAIN 32,768 Hz CRYSTAL POWER
8x8 TIMEKEEPER REGISTERS A0-A18
524,280 x 8 SRAM ARRAY LITHIUM CELL VOLTAGE SENSE AND SWITCHING CIRCUITRY VPFD
DQ0-DQ7
E W G
VCC
VSS
AI02384
6/22
M48T512Y, M48T512V
Operating modes
2
Operating modes
The 32-pin, 600 mil hybrid DIP houses a controller chip, SRAM, quartz crystal, and a long life lithium button cell in a single package. Figure 3 on page 6 illustrates the static memory array and the quartz controlled clock oscillator. The clock locations contain the year, month, date, day, hour, minute, and second in 24 hour BCD format. Corrections for 28, 29 (leap year - compliant until the year 2100), 30, and 31 day months are made automatically. Byte 7FFF8h is the clock control register (see Table 5 on page 12). This byte controls user access to the clock information and also stores the clock calibration setting. The seven clock bytes (7FFFFh-7FFF9h) are not the actual clock counters; they are memory locations consisting of BiPORTTM READ/WRITE memory cells within the static RAM array. The M48T512Y/V includes a clock control circuit which updates the clock bytes with current information once per second. The information can be accessed by the user in the same manner as any other location in the static memory array. The M48T512Y/V also has its own Power-Fail Detect circuit. This control circuitry constantly monitors the supply voltage for an out of tolerance condition. When VCC is out of tolerance, the circuit write protects the TIMEKEEPER register data and SRAM, providing data security in the midst of unpredictable system operation. As VCC falls, the control circuitry automatically switches to the battery, maintaining data and clock operation until valid power is restored. Table 2.
Mode Deselect WRITE READ READ Deselect Deselect VSO to VPFD (min)(1) VSO(1) 4.5 to 5.5 V or 3.0 to 3.6 V
Operating modes
VCC E VIH VIL VIL VIL X X G X X VIL VIH X X W X VIL VIH VIH X X DQ0-DQ7 High Z DIN DOUT High Z High Z High Z Power Standby Active Active Active CMOS standby Batter y backup mode
1. See Table 11 on page 18 for details.
Note:
X = VIH or VIL; VSO = Battery backup switchover voltage.
2.1
READ mode
The M48T512Y/V is in the READ mode whenever W (WRITE Enable) is high and E (Chip Enable) is low. The unique address specified by the 19 Address Inputs defines which one of the 524,288 bytes of data is to be accessed. Valid data will be available at the Data I/O pins within Address Access Time (tAVQV) after the last address input signal is stable, providing the E and G access times are also satisfied. If the E and G access times are not met, valid data will be available after the latter of the Chip Enable Access Times (tELQV) or Output Enable Access Time (tGLQV). The state of the eight three-state Data I/O signals is controlled by E and G. If the outputs are activated before tAVQV, the data lines will be driven to an indeterminate state until tAVQV. If the Address Inputs are changed while E and G remain active, output data will remain valid for Output Data Hold Time (tAXQX) but will go indeterminate until the next Address Access.
7/22
Operating modes Figure 4.
A0-A18 tAVQV tELQV E tELQX tGLQV G tGLQX DQ0-DQ7 DATA OUT tGHQZ
M48T512Y, M48T512V
READ mode AC waveforms
VALID tAXQX tEHQZ
Note: Table 3.
WE = High. READ mode AC characteristics
M48T512Y M48T512V 85 Max Min 85 70 70 40 5 5 25 25 10 5 5 5 30 30 85 85 55 M ax ns ns ns ns ns ns ns ns ns Unit Parameter(1) Min
Symbol
70
tAVAV tAVQV tELQV tGLQV tELQX(2) tGLQX(2) tEHQZ(2) tGHQZ(2) tAXQX
2. CL = 5pF.
READ cycle time Address valid to output valid Chip enable low to output valid Output enable low to output valid Chip enable low to output transition Output enable low to output transition Chip enable high to output Hi-Z Output enable high to output Hi-Z Address transition to output transition
70
1. Valid for ambient operating temperature: TA = 0 to 70C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2.2
WRITE mode
The M48T512Y/V is in the WRITE mode whenever W (WRITE Enable) and E (Chip Enable) are low state after the address inputs are stable. The start of a WRITE is referenced from the latter occurring falling edge of W or E. A WRITE is terminated by the earlier rising edge of W or E. The addresses must be held valid throughout the cycle. E or W must return high for a minimum of tEHAX from Chip Enable or tWHAX from WRITE Enable prior to the initiation of another READ or WRITE cycle. Data-in must be valid tDVWH prior to the end of WRITE and remain valid for tWHDX afterward. G should be kept high during WRITE cycles to avoid bus contention; although, if the output bus has been activated by a low on E and G a low on W will disable the outputs tWLQZ after W falls.
8/22
M48T512Y, M48T512V Figure 5. WRITE AC waveforms, WRITE enable controlled
tAVAV A0-A18 VALID tAVWH tAVEL E tWLWH tAVWL W tWLQZ tWHDX DQ0-DQ7 DATA INPUT tDVWH
Operating modes
tWHAX
tWHQX
AI02386
Figure 6.
WRITE AC waveforms, chip enable controlled
tAVAV A0-A18 VALID tAVEH tAVEL E tAVWL W tEHDX DQ0-DQ7 DATA INPUT tDVEH
AI02387
tELEH
tEHAX
9/22
Operating modes Table 4. WRITE mode AC characteristics
M48T512Y Symbol Parameter(1) Min tAVAV tAVWL tAVEL tWLWH tELEH tWHAX tEHAX tDVWH tDVEH tWHDX tEHDX tWLQZ(2)(3) tAVWH tAVEH tWHQX(2)(3)
2. CL = 5pF. 3. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
M48T512Y, M48T512V
M48T512V -85 Unit Max ns ns ns ns ns ns ns ns ns ns ns 30 70 70 5 ns ns ns ns
-70 Max Min 85 0 0 60 65 5 15 35 35 5 15 25 60 60 5
WRITE cycle time Address valid to WRITE enable low Address valid to chip enable low WRITE enable pulse width Chip enable low to chip enable high WRITE enable high to address transition Chip enable high to address transition Input valid to WRITE enable high Input valid to chip enable high WRITE enable high to input transition Chip enable high to input transition WRITE enable low to output Hi-Z Address valid to write enable high Address valid to chip enable high WRITE enable high to output transition
70 0 0 50 55 5 10 30 30 5 10
1. Valid for ambient operating temperature: TA = 0 to 70C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
2.3
Data retention mode
With valid VCC applied, the M48T512Y/V operates as a conventional BYTEWIDETM static RAM. Should the supply voltage decay, the RAM will automatically deselect, write protecting itself when VCC falls between VPFD (max) and VPFD (min). All outputs become high impedance and all inputs are treated as "Don't care."
Note:
A power failure during a WRITE cycle may corrupt data at the current addressed location, but does not jeopardize the rest of the RAM's content. At voltages below VPFD (min), the memory will be in a write protected state, provided the VCC fall time is not less than tF. The M48T512Y/V may respond to transient noise spikes on VCC that cross into the deselect window during the time the device is sampling VCC.Therefore, decoupling of the power supply lines is recommended. When VCC drops below VSO, the control circuit switches power to the internal battery, preserving data and powering the clock. The internal energy source will maintain data in the M48T512Y/V for an accumulated period of at least 10 years at room temperature. As system power rises above VSO, the battery is disconnected, and the power supply is switched to external VCC. Write protection continues until VCC reaches VPFD (min) plus tREC (min). Normal RAM operation can resume tREC after VCC exceeds VPFD (max). Refer to Application Note (AN1012) on the ST website for more information on battery life.
10/22
M48T512Y, M48T512V
Clock operations
3
3.1
Clock operations
Reading the clock
Updates to the TIMEKEEPER registers should be halted before clock data is read to prevent reading data in transition (see Table 5 on page 12). The BiPORTTM TIMEKEEPER cells in the RAM array are only data registers and not the actual clock counters, so updating the registers can be halted without disturbing the clock itself. Updating is halted when a '1' is written to the READ bit, D6 in the Control Register (7FFF8h). As long as a '1' remains in that position, updating is halted. After a halt is issued, the registers reflect the count; that is, the day, date, and time that were current at the moment the halt command was issued. All of the TIMEKEEPER registers are updated simultaneously. A halt will not interrupt an update in progress. The next update occurs 1 second after the READ bit is reset to a '0.'
3.2
Setting the clock
Bit D7 of the Control Register (7FFF8h) is the WRITE bit. Setting the WRITE bit to a '1,' like the READ bit, halts updates to the TIMEKEEPER registers. The user can then load them with the correct day, date, and time data in 24 hour BCD format (see Table 5 on page 12). Resetting the WRITE bit to a '0' then transfers the values of all time registers 7FFFFh7FFF9h to the actual TIMEKEEPER counters and allows normal operation to resume. After the WRITE bit is reset, the next clock update will occur approximately one second later.
Note:
Upon power-up, both the WRITE bit and the READ bit will be reset to '0.'
3.3
Stopping and starting the oscillator.
The oscillator may be stopped at any time. If the device is going to spend a significant amount of time on the shelf, the oscillator can be turned off to minimize current drain on the battery. The STOP bit is located at bit D7 within 7FFF9h. Setting it to a '1' stops the oscillator. The M48T512Y/V is shipped from STMicroelectronics with the STOP bit set to a '1.' When reset to a '0,' the M48T512Y/V oscillator starts after approximately one second.
No te :
It is not necessary to set the WRITE bit when setting or resetting the FREQUENCY TEST bit (FT) or the STOP bit (ST).
11/22
Clock operations Table 5.
Address D7 7FFFFh 7FFFEh 7FFFDh 7FFFCh 7FFFBh 7FFFAh 7FFF9h 7FFF8h 0 0 0 0 0 ST W R D6 D5 D4 D3 D2 D1 Year 10 M Month Date 0 Day Hours Minutes Seconds Calibration D0 10 years 0 0 0 0 0
M48T512Y, M48T512V Register map
Data Function/range BCD format Year Month Date Day Hours Minutes Seconds Control 00-99 01-12 01-31 01-07 00-23 00-59 00-59
10 date 0 0
10 hours 10 minutes 10 seconds S
Keys: S = SIGN bit R = READ bit W = WRITE bit ST = STOP bit 0 = Must be set to '0'
3.4
Calibrating the clock
The M48T512Y/V is driven by a quartz controlled oscillator with a nominal frequency of 32,768 Hz. The devices are factory calibrated at 25C and tested for accuracy. Clock accuracy will not exceed 35 ppm (parts per million) oscillator frequency error at 25C, which equates to about 1.53 minutes per month. When the Calibration circuit is properly employed, accuracy improves to better than +1/2 ppm at 25C. The oscillation rate of crystals changes with temperature. The M48T512Y/V design employs periodic counter correction. The calibration circuit adds or subtracts counts from the oscillator divider circuit at the divide by 256 stage (see Figure 8 on page 13). The number of times pulses are blanked (subtracted, negative calibration) or split (added, positive calibration) depends upon the value loaded into the five Calibration bits found in the Control Register. Adding counts speeds the clock up, subtracting counts slows the clock down. The Calibration bits occupy the five lower order bits (D4-D0) in the Control Register 7FFF8h. These bits can be set to represent any value between 0 and 31 in binary form. Bit D5 is a Sign bit; '1' indicates positive calibration, '0' indicates negative calibration. Calibration occurs within a 64 minute cycle. The first 62 minutes in the cycle may, once per minute, have one second either shortened by 128 or lengthened by 256 oscillator cycles. If a binary '1' is loaded into the register, only the first 2 minutes in the 64 minute cycle will be modified; if a binary 6 is loaded, the first 12 will be affected, and so on. Therefore, each calibration step has the effect of adding 512 or subtracting 256 oscillator cycles for every 125, 829, 120 actual oscillator cycles; that is, +4.068 or 2.034 ppm of adjustment per calibration step in the calibration register. Assuming that the oscillator is running at exactly 32,768 Hz, each of the 31 increments in the Calibration byte would represent +10.7 or 5.35 seconds per month which corresponds to a total range of +5.5 or 2.75 minutes per month.
12/22
M48T512Y, M48T512V
Clock operations
One method for ascertaining how much calibration a given M48T512Y/V may require involves setting the clock, letting it run for a month and comparing it to a known accurate reference and recording deviation over a fixed period of time. Calibration values, including the number of seconds lost or gained in a given period, can be found in STMicroelectronics' Application Note AN934, "TIMEKEEPER Calibration." This allows the designer to give the end user the ability to calibrate the clock as the environment requires, even if the final product is packaged in a non-user serviceable enclosure. The designer could provide a simple utility that accesses the Calibration bits. For more information on calibration see Application Note AN934, "TIMEKEEPER Calibration" on the ST website. Figure 7. Crystal accuracy across temperature
Frequency (ppm) 20 0 20 40 60 80 100 120 140 160 40 30 20 10 0 10 20 30 40 50 60 70 80 F = -0.038 ppm (T - T )2 10% 0 F C2 T0 = 25 C
Temperature C
AI00999
Figure 8.
Calibration waveform
NORMAL
POSITIVE CALIBRATION
NEGATIVE CALIBRATION
AI00594B
13/22
Clock operations
M48T512Y, M48T512V
3.5
VCC noise and negative going transients
ICC transients, including those produced by output switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. A ceramic bypass capacitor value of 0.1 F is recommended to filter these spikes. In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, ST recommends connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). (Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount). Figure 9. Supply voltage protection
VCC VCC
0.1F
DEVICE
VSS
AI02169
Caution:
Negative undershoots below 0.3 V are not allowed on any pin while in the battery backup mode.
14/22
M48T512Y, M48T512V
Maximum ratings
4
Maximum ratings
Stressing the device above the ratings listed in the "Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 6.
Symbol TA TSTG TSLD
(1)
Absolute maximum ratings
Parameter Ambient operating temperature Storage temperature (VCC off, oscillator off) Lead solder temperature for 10 seconds Input or output voltages Supply voltage Output current Power dissipation M48T512Y M48T512V Value 0 to 70 40 to 85 260 0.3 to VCC +0.3 0.3 to 7.0 0.3 to 4.6 20 1 Unit C C C V V V mA W
VIO VCC IO PD
1. Soldering temperature not to exceed 260C for 10 seconds (total thermal budget not to exceed 150C for longer than 30 seconds). No preheat above 150C, or direct exposure to IR reflow (or IR preheat) allowed, to avoid damaging the Lithium battery.
Caution:
Negative undershoots below 0.3 V are not allowed on any pin while in the battery backup mode.
15/22
DC and AC parameters
M48T512Y, M48T512V
5
DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and AC characteristics of the device. The parameters in the following DC and AC Characteristic tables are derived from tests performed under the Measurement Conditions listed in the relevant tables. Designers should check that the operating conditions in their projects match the measurement conditions when using the quoted parameters. Table 7. Operating and AC measurement conditions
Parameter Supply voltage (VCC) Ambient operating temperature (TA) Load capacitance (CL) Input rise and fall times Input pulse voltages Input and output timing ref. voltages M48T512Y 4.5 to 5.5 0 to 70 100 5 0 to 3 1.5 M48T512V 3.0 to 3.6 0 to 70 50 5 0 to 3 1.5 Unit V C pF ns V V
Figure 10. AC measurement load circuit
DEVICE UNDER TEST
CL
(1)
1.75V
CL includes JIG capacitance
AI03971
1. CL = 50 pF for M48T512V.
Table 8.
Symbol CIN CIO(3)
Capacitance
Parameter(1)(2) Input capacitance Input / output capacitance Min Max 20 20 Unit pF pF
1. Effective capacitance measured with power supply at 5 V (M48T512Y) or 3.3 V (M48T512V). Sampled only, not 100% tested. 2. At 25C, f = 1 MHz. 3. Outputs deselected.
16/22
M48T512Y, M48T512V Table 9. DC characteristics
M48T512Y Symbol Parameter Test condition(1) Min ILI ILO(2) ICC ICC1 ICC2 VIL VIH VOL VOH Input leakage current Output leakage current Supply current Supply current (standby) TTL Supply current (standby) CMOS Input low voltage Input high voltage Output low voltage Output high voltage IOL = 2.1 mA IOH = 1 mA 2.4 0 V VIN VCC 0 V VOUT VCC Outputs open E = VIH E VCC 0.2 V 0.3 2.2 70 Max 2 2 115 8 4 0.8 VCC +0.3 0.4
DC and AC parameters
M48T512V 85 Min Max 2 2 60 4 3 0.3 2.2 2.2 0.4 VCC +0.3 0.4 A A mA mA mA V V V V Unit
1. Valid for ambient operating temperature: TA = 0 to 70C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted). 2. Outputs deselected.
Figure 11. Power down/up mode AC waveforms
VCC VPFD (max) VPFD (min) VSO VSS
tF tFB
tDR tRB DON'T CARE
tR tREC
RECOGNIZED
INPUTS
(Including E)
RECOGNIZED
HIGH-Z OUTPUTS VALID VALID
AI02385
17/22
DC and AC parameters Table 10.
Symbol tF(2) tFB(3) tR tRB t REC
M48T512Y, M48T512V
Power down/up AC characteristics
Parameter(1) VPFD (max) to VPFD (min) VCC fall time VPFD (min) to VSS VCC fall time VPFD (min) to VPFD (max) VCC rise time VSS to VPFD (min) VCC rise time E recovery time M48T512Y M48T512V Min 300 10 150 10 1 40 200 Max Unit s s s s s ms
1. Valid for ambient operating temperature: TA = 0 to 70C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted). 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200s after VCC passes VPFD (min). 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
Table 11.
Symbol VPFD VSO tDR(3)
Power down/up trip points DC characteristics
Parameter(1)(2) Power-fail deselect voltage M48T512Y M48T512V M48T512Y M48T512V 10 Min 4.2 2.7 Typ 4.35 2.9 3.0 VPFD 100mV Max 4.5 3.0 Unit V V V V YEARS
Battery backup switchover voltage Expected data retention time
1. All voltages referenced to VSS. 2. Valid for ambient operating temperature: TA = 0 to 70C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted). 3. At 25C, VCC = 0 V.
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M48T512Y, M48T512V
Package mechanical data
6
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Figure 12. PMDIP32 32-pin plastic module DIP, package outline
A
A1 S B e3 D e1
L eA
C
N
E
1 PMDIP
Note:
Drawing is not to scale. Table 12.
Symb Typ A A1 B C D E e1 e3 eA L S N Min 9.27 0.38 0.43 0.20 42.42 18.03 2.29 34.29 14.99 3.05 1.91 32 Max 9.52 0.59 0.33 43.18 18.80 2.79 41.91 16.00 3.81 2.79 0.100 1.500 0.600 Typ Min 0.365 0.015 0.017 0.008 1.670 0.710 0.090 1.350 0.590 0.120 0.075 32 Max 0.375 0.023 0.013 1.700 0.740 0.110 1.650 0.630 0.150 0.110
PMDIP32 32-pin plastic module DIP, package mechanical data
mm inches
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Part numbering
M48T512Y, M48T512V
7
Part numbering
Table 13.
Example:
Ordering information scheme
M48T 512Y 70 PM 1
Device type M48T
Supply voltage and write protect voltage 512Y = VCC = 4.5 to 5.5 V; VPFD = 4.2 to 4.5 V 512V = VCC = 3.0 to 3.6 V; VPFD = 2.7 to 3.0 V
Speed 70 = 70 ns (512Y) 85 = 85 ns (512V)
Package PM = PMDIP32
Temperature range 1 = 0 to 70C
For other options, or for more information on any aspect of this device, please contact the ST sales office nearest you.
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M48T512Y, M48T512V
Revision history
8
Revision history
Table 14.
Date June 1998 03-Dec-1999 11-Dec-2000 20-Jul-2001 07-Aug-2001 20-May-2002 07-Aug-2002 31-Mar-2003 22-Feb-2005 25-Mar-2008
Document revision history
Revision 1.0 1.1 2.0 2.1 2.2 2.3 2.4 3.0 4.0 5.0 First issue M48T512Y: VPFD (Min) changed; AC measurement load circuit changed (Figure 10); tFB and tRB changed (Figure 11, Table 10) Reformatted Segments re-ordered; temp./voltage info. added to tables (Table 8, 9, 3, 4, 10, 11) Text re-ordered from last adjustment ("Operating modes" section) Add countries to disclaimer Add marketing status v2.2 template applied; data retention condition updated (Table 11) Reformatted; IR reflow update (Table 6) Reformatted document, minor text changes; updated cover page and Table 13 concerning availability of M48T512V (3.3 V version); updated Figure 9, 10, 11, Table 9, 12, Section 6: Package mechanical data. Changes
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M48T512Y, M48T512V
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