Datasheets | Transistors | Transistors, Power Bipolar | Very High Voltage

High voltage fast-switching NPN power transistor

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Last Updated: 21/01/2008

Pages: 6

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BUL1403ED
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

s

s

s s s

s s

INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED TO-220

3 1 2

s

APPLICATIONS 2/4 LAMPS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING 277 VAC PUSH-PULL CONFIGURATION DESCRIPTION The BUL1403ED is a new device, designed for fluorescent electronic ballast 277 VAC push-pull applications (up to 4 lamps). This device, it can be used without baker clamp and transil protection, reducing greatly the component count.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
S ym b o l V CE S V CE O VEBO IC ICM IB IBM Ptot Tstg Tj P a r am e t e r C o l le c t o r- E m i t te r Voltage (V B E = 0) C o l le c t o r- E m i t te r Voltage (I B = 0) E m i t te r - B as e Voltage (I C = 0) C o l le c t o r Current C o l le c t o r Peak Current (t p <5 ms) B a s e Current B a s e Peak Current (t p <5 ms) T o t a l Dissipation at T c = 25 o C S t o ra g e Temperature M a x . Operating Junction Temperature Va l u e 14 0 0 650 11 3 6 2 4 80 - 6 5 to 150 150 U ni t V V V A A A A W
o o

C C

September 2002

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BUL1403ED
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m al Resistance Junction-Case T h e r m al Resistance Junction-Ambient Max Max 1.56 62.5
o o

C/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l I CE S IEBO P a r a m et e r C o l le c t o r Cut-off C u r re n t (V B E = 0) B a s e -E m i t t er Leakage C u r re n t T e s t Conditions V C E = 1400 V VEB = 9 V I C = 10 mA L = 25 mH 650 Min. Typ. M a x. 1 100 Unit mA A V

V CE O ( s u s ) C o l le c t o r- E m i t te r S u s t ai n i ng Voltage ( I B = 0) V (BR )EBO E m i t t er - B as e B r e ak d o w n Voltage ( I C = 0) C o l le c t o r- E m i t te r S a t u ra t i on Voltage B a s e -E m i t t er S a t u ra t i on Voltage D C Current Gain

I E = 10 mA

11

18

V

V C E(s at ) V B E (s at )

I C = 0.5 A I C = 0.25 A I C = 0.5 A IC = 1 A IC = 2 A I C = 5 mA I C = 0.4 A I C = 0.8 A I C = 0.5 A I B 1 = 0.05 A D . C . = 2% ( s e e figure 1) L = 2 mH V C C = 50 V ( s e e figure 2)

I B = 0.05 A I B = 0.025 A I B = 0.1 A I B = 0.1 A I B = 0.4 A V C E = 10 V V CE = 3 V V CE = 5 V V C C = 125 V I B 2 = -0.25 A P.W. = 300 s C = 1.8 nF V B E = -5 V 6 18 15 4

2.5 1.5 1.0 1.1 1.2 40

V V V V V

h FE

td tr ts tf Ear

R E S I S T IV E LOAD D e l a y Time R i s e Time S t o ra g e Time F a l l Time R e p e t it i v e Avalanche E n e rg y

0.3 0.8 1.2 0 . 35

s s s s mJ

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

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BUL1403ED
Safe Operating Areas Derating Curve

Output Characteristics

DC Current Gain

DC Current Gain

Collector Emitter Saturation Voltage

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BUL1403ED
Base Emitter Saturation Voltage Reverse Biased SOA

Figure 1: Resistive Load Switching Test Circuit

1 ) Fast electronic switch 2 ) Non-inductive Resistor

Figure 2: Energy Rating Test Circuit

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BUL1403ED

TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409

P011CI
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BUL1403ED

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