BUL903ED
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s
s s s
s s
INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED TO-220
3 1 2
s
APPLICATIONS LAMP ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING USING 277V HALF BRIDGE CURRENT-FED CONFIGURATION DESCRIPTION The BUL903ED is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l V CE S V CE O VEBO IC ICM IB IBM Ptot Tstg Tj P a r am e t e r C o l le c t o r- E m i t te r Voltage (V B E = 0) C o l le c t o r- E m i t te r Voltage (IB = 0) E m i t te r - B as e Voltage (IC = 0) C o l le c t o r Current C o l le c t o r Peak Current (t p <5 ms) B a s e Current B a s e Peak Current (t p <5 ms) T o t a l Dissipation at Tc = 25 o C S t o ra g e Temperature M a x . Operating Junction Temperature Va l u e 900 400 7 5 8 2 4 70 - 6 5 to 150 150 U ni t V V V A A A A W
o o
C C
February 2001
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BUL903ED
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m al Resistance Junction-Case T h e r m al Resistance Junction-Ambient Max Max 1.8 62 . 5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l I CE S IEBO P a r a m et e r C o l le c t o r Cut-off C u r re n t (V B E = 0) B a s e -E m i t t er Leakage C u r re n t T e s t Conditions V C E = 900 V VEB = 7 V I C = 10 mA L = 25 mH 400 Min. Typ. M a x. 1 100 Unit mA A V
V CE O ( s u s ) C o l le c t o r- E m i t te r S u s t ai n i ng Voltage (I B = 0) V C E(s at ) V B E (s at ) C o l le c t o r- E m i t te r S a t u ra t i on Voltage B a s e -E m i t t er S a t u ra t i on Voltage D C Current Gain P a r al l e l Diode Forward V o l ta g e R E S I S T IV E LOAD D e l a y Time R i s e Time S t o ra g e Time F a l l Time R E S I S T IV E LOAD D e l a y Time R i s e Time S t o ra g e Time F a l l Time D i o d e Reverse R e c o v e ry Time A v a la n c h e Energy
IC = 1 A I C = 0.1 A I C = 0.5 A I C = 2.0 A I C = 5 mA I C = 0.5 A IF = 3 A V C C = 125 V I B 1 = 0.05 A t p = 300 s
I B = 0.15 A I B = 0.05 A I B = 0.1 A I B = 0.4 A V C E = 10 V VC E = 3 V 8 20
1.0 1.0 1.1 1.2
V V V V
h FE VF
1.2 I C = 0.7 A I B 2 = 0.4 A
V
td tr ts tf td tr ts tf T RR E sb
0.2 1.0 0.8 0 . 25 0.2 0.5 0.8 0.5 300 6
s s s s s s s s ns mJ
V C C = 125 V I B 1 = 0.045 A t p = 300 s
I C = 0.5 A I B 2 = 0.5 A
IF = 1 A V D D = 30 V L = 2 mH
di/dt = 100 A/s
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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BUL903ED
Reverse Biased SOA
Resistive Load Switching Test Circuit
Energy Rating Test Circuit
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BUL903ED
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. M AX. 4.60 1.32 2.72 M IN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. M AX. 0.181 0.051 0.107
P011C
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BUL903ED
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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