M48Z35AV
5.0V or 3.3V, 256Kbit (32Kbit x 8) ZEROPOWER SRAM
Features
Integrated, ultra low power SRAM, power-fail control circuit, and battery READ cycle time equals WRITE cycle time Battery low flag (BOK) Automatic power-fail chip deselect and WRITE protection WRITE protect voltage: (VPFD = Power-fail deselect voltage) M48Z35AV: 2.7V VPFD 3.0V Self-contained battery in the CAPHATTM DIP package Packaging includes a 28-lead SOIC and SNAPHAT top (to be ordered separately) Pin and function compatible with JEDEC standard 32Kbit x 8 SRAMs SOIC package provides direct connection for a SNAPHAT top which contains the battery RoHS compliant Lead-free second level interconnect
28 1 28 1
PCDIP28 (PC) Battery CAPHAT
SNAPHAT (SH) battery
SOH28 (MH)
November 2007
Rev 6
1/24
www.st.com 1
Contents
M48Z35AV
Contents
1 2 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 2.2 2.3 2.4 Read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Write mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data retention mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 VCC noise and negative going transients . . . . . . . . . . . . . . . . . . . . . . . . . 13
3 4 5 6 7
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
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M48Z35AV
List of tables
List of tables
Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Read mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Write mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Power down/up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Power down/up trip points DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 PMDIP28 28-pin plastic DIP, battery CAPHATTM, pack. mech. data. . . . . . . . . . . . . . . . 18 SOH28 28-lead plastic small outline, battery SNAPHAT, pack. mech. data . . . . . . . . . . 19 SH 4-pin SNAPHAT housing for 48mAh battery, pack. mech. data . . . . . . . . . . . . . . . . 20 SH 4-pin SNAPHAT housing for 120 mAh battery, pack. mech. data . . . . . . . . . . . . . . . 21 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 SNAPHAT battery table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
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List of figures
M48Z35AV
List of figures
Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DIP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 SOIC connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Read mode AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Write enable controlled, write mode AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Chip enable controlled, write mode AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 BOK check routine example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Supply voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Power down/up mode AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 PCDIP28 28-pin plastic DIP, battery CAPHATTM, package outline . . . . . . . . . . . . . . . . . 18 SOH28 28-lead plastic small outline, battery SNAPHAT, package outline . . . . . . . . . . . 19 SH 4-pin SNAPHAT housing for 48mAh battery, package outline. . . . . . . . . . . . . . . . . . 20 SH 4-pin SNAPHAT housing for 120mAh battery, package outline. . . . . . . . . . . . . . . . . 21
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M48Z35AV
Summary
1
Summary
The M48Z35AV ZEROPOWER RAM is a 32Kbit x 8, non-volatile static RAM that integrates power-fail deselect circuitry and battery control logic on a single die. The monolithic chip is available in two special packages to provide a highly integrated battery backed-up memory solution. The M48Z35AV is a non-volatile pin and function equivalent to any JEDEC standard 32K x8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. The 28 pin 600mil DIP CAPHATTM houses the M48Z35AV silicon with a long life lithium button cell in a single package. The 28-pin, 330mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT housing containing the battery. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surfacemounting. The SNAPHAT housing is keyed to prevent reverse insertion. The SOIC and battery packages are shipped separately in plastic anti-static tubes or in Tape & Reel form. For the 28-lead SOIC, the battery package (e.g., SNAPHAT) part number is "M4Z28BR00SH1." Figure 1. Logic diagram
VCC
15 A0-A14
8 DQ0-DQ7
W E G
M48Z35AV
VSS
AI02781B
5/24
Summary Table 1. Signal names
A0-A14 DQ0-DQ7 E G W VCC VSS Address inputs Data inputs / outputs Chip enable input Output enable input WRITE enable input Supply voltage Ground
M48Z35AV
Figure 2.
DIP connections
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 M48Z35AV 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC W A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
AI02782B
Figure 3.
SOIC connections
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 M48Z35AV 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC W A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
AI02783
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M48Z35AV Figure 4. Block diagram
Summary
A0-A14
LITHIUM CELL VOLTAGE SENSE AND SWITCHING CIRCUITRY
POWER
32K x 8 SRAM ARRAY
DQ0-DQ7
VPFD
E W G
VCC
VSS
AI01619B
7/24
Operating modes
M48Z35AV
2
Operating modes
The M48Z35AV also has its own Power-fail Detect circuit. The control circuitry constantly monitors the single power supply for an out of tolerance condition. When VCC is out of tolerance, the circuit write protects the SRAM, providing a high degree of data security in the midst of unpredictable system operation brought on by low VCC. As VCC falls below approximately VSO, the control circuitry connects the battery which maintains data until valid power returns. Table 2.
Mode Deselect WRITE READ READ Deselect Deselect VSO to VPFD (min)(1) 3.0 to 3.6V
Operating modes
VCC E VIH VIL VIL VIL X X G X X VIL VIH X X W X VIL VIH VIH X X DQ0-DQ7 High Z DIN DOUT High Z High Z High Z Power Standby Active Active Active CMOS standby Battery back-up mode
VSO(1)
1. See Table 10 on page 17 for details.
Note:
X = VIH or VIL; VSO = Battery back-up switchover voltage.
2.1
Read mode
The M48Z35AV is in the READ Mode whenever W (WRITE Enable) is high, E (Chip Enable) is low. The device architecture allows ripple-through access of data from eight of 264,144 locations in the static storage array. Thus, the unique address specified by the 15 Address Inputs defines which one of the 32,768 bytes of data is to be accessed. Valid data will be available at the Data I/O pins within Address Access time (tAVQV) after the last address input signal is stable, providing that the E and G access times are also satisfied. If the E and G access times are not met, valid data will be available after the latter of the Chip Enable Access time (tELQV) or Output Enable Access time (tGLQV). The state of the eight three-state Data I/O signals is controlled by E and G. If the outputs are activated before tAVQV, the data lines will be driven to an indeterminate state until tAVQV. If the Address Inputs are changed while E and G remain active, output data will remain valid for Output Data Hold time (tAXQX) but will go indeterminate until the next Address Access.
8/24
M48Z35AV Figure 5. Read mode AC waveforms
tAVAV A0-A14 tAVQV tELQV E tELQX tGLQV G tGLQX DQ0-DQ7 VALID tGHQZ VALID
Operating modes
tAXQX tEHQZ
AI00925
Note: Table 3.
WRITE enable (W) = High. Read mode AC characteristics
M48Z35AV
Symbol
Parameter(1) Min
100 Max
Unit
tAVAV tAVQV tELQV tGLQV tELQX
(2)
READ cycle time Address valid to output valid Chip enable low to output valid Output enable low to output valid Chip enable low to output transition Output enable low to output transition Chip enable high to output Hi-Z Output enable high to output Hi-Z Address transition to output transition
100 100 100 50 10 5 50 40 10
ns ns ns ns ns ns ns ns ns
tGLQX(2) tEHQZ(2) tGHQZ(2) tAXQX
1. Valid for ambient operating temperature: TA = 0 to 70C; VCC = 3.0 to 3.6V (except where noted). 2. CL = 5pF (see Figure 10 on page 15).
2.2
Write mode
The M48Z35AV is in the WRITE Mode whenever W and E are low. The start of a WRITE is referenced from the latter occurring falling edge of W or E. A WRITE is terminated by the earlier rising edge of W or E. The addresses must be held valid throughout the cycle. E or W must return high for a minimum of tEHAX from Chip Enable or tWHAX from WRITE Enable prior to the initiation of another READ or WRITE cycle. Data-in must be valid tDVWH prior to the end of WRITE and remain valid for tWHDX afterward. G should be kept high during
9/24
Operating modes
M48Z35AV
WRITE cycles to avoid bus contention; although, if the output bus has been activated by a low on E and G, a low on W will disable the outputs tWLQZ after W falls. Figure 6. Write enable controlled, write mode AC waveforms
tAVAV A0-A14 VALID tAVWH tAVEL E tWLWH tAVWL W tWLQZ tWHDX DQ0-DQ7 DATA INPUT tDVWH
AI00926
tWHAX
tWHQX
Figure 7.
Chip enable controlled, write mode AC waveforms
tAVAV A0-A14 VALID tAVEH tAVEL E tAVWL W tEHDX DQ0-DQ7 DATA INPUT tDVEH
AI00927
tELEH
tEHAX
10/24
M48Z35AV Table 4. Write mode AC characteristics
Operating modes
M48Z35AV Symbol Parameter(1) Min tAVAV tAVWL tAVEL tWLWH t ELEH tWHAX tEHAX tDVWH tDVEH tWHDX tEHDX tWLQZ
(2)(3)
100 Max
Unit
WRITE cycle time Address valid to WRITE enable low Address valid to chip enable low WRITE enable pulse width Chip enable low to chip enable high WRITE enable high to address transition Chip enable high to address transition Input valid to WRITE enable high Input valid to chip enable high WRITE enable high to input transition Chip enable high to input transition WRITE enable low to output Hi-Z Address valid to WRITE enable high Address valid to chip enable high WRITE enable high to output transition
100 0 0 80 80 10 10 50 50 5 5 50 80 80 10
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
tAVWH tAVEH tWHQX(2)(3)
1. Valid for ambient operating temperature: TA = 0 to 70C; VCC = 3.0 to 3.6V (except where noted). 2. CL = 5pF (see Figure 10 on page 15). 3. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
2.3
Data retention mode
With valid VCC applied, the M48Z35AV operates as a conventional BYTEWIDETM static RAM. Should the supply voltage decay, the RAM will automatically power-fail deselect, write protecting itself when VCC falls within the VPFD (max), VPFD (min) window. All outputs become high impedance, and all inputs are treated as "Don't care."
Note:
A power failure during a WRITE cycle may corrupt data at the currently addressed location, but does not jeopardize the rest of the RAM's content. At voltages below VPFD(min), the user can be assured the memory will be in a write protected state, provided the VCC fall time is not less than tF. The M48Z35AV may respond to transient noise spikes on VCC that reach into the deselect window during the time the device is sampling VCC. Therefore, decoupling of the power supply lines is recommended. When VCC drops below VSO, the control circuit switches power to the internal battery which preserves data. The internal button cell will maintain data in the M48Z35AV for an accumulated period of at least 10 years (at 25C) when VCC is less than VSO. As system power returns and VCC rises above VSO, the battery is disconnected, and the power supply is switched to external VCC. Write protection continues until VCC reaches VPFD(min) plus tREC(min). Normal RAM operation can resume tREC after VCC exceeds VPFD(max).
11/24
Operating modes
M48Z35AV
Also, as VCC rises, the battery voltage is checked. If the voltage is less than approximately 2.5V, an internal Battery Not OK (BOK) flag will be set. The BOK flag can be checked after power up. If the BOK flag is set, the first WRITE attempted will be blocked. The flag is automatically cleared after the first WRITE, and normal RAM operation resumes. Figure 8 illustrates how a BOK check routine could be structured. For more information on Battery Storage Life refer to the Application Note AN1012. Figure 8. BOK check routine example
POWER-UP
READ DATA AT ANY ADDRESS
WRITE DATA COMPLEMENT BACK TO SAME ADDRESS
READ DATA AT SAME ADDRESS AGAIN
IS DATA COMPLEMENT OF FIRST READ? (BATTERY OK) YES
NO (BATTERY LOW)
NOTIFY SYSTEM OF LOW BATTERY (DATA MAY BE CORRUPTED)
WRITE ORIGINAL DATA BACK TO SAME ADDRESS
CONTINUE
AI00607
12/24
M48Z35AV
Operating modes
2.4
VCC noise and negative going transients
ICC transients, including those produced by output switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1F (see Figure 9) is recommended in order to provide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, ST recommends connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). (Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount). Figure 9. Supply voltage protection
VCC VCC
0.1F
DEVICE
VSS
AI02169
13/24
Maximum rating
M48Z35AV
3
Maximum rating
Stressing the device above the rating listed in the "Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 5.
Symbol TA TSTG TSLD(1)(2) VIO VCC IO PD
Absolute maximum ratings
Parameter Ambient operating temperature SNAPHAT Storage temperature (VCC off, oscillator off) Lead solder temperature for 10 seconds Input or output voltages Supply voltage Output current Power dissipation
top
Value 0 to 70 40 to 85 40 to 85 55 to 125 260 0.3 to 4.6 0.3 to 4.6 20 1
Unit C C C C C V V mA W
CAPHAT DIP SOIC
1. For DIP package: Soldering temperature not to exceed 260C for 10 seconds (total thermal budget not to exceed 150C for longer than 30 seconds). 2. For SO package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 260C (total thermal budget not to exceed 245C for greater than 30 seconds).
Caution: Caution:
Negative undershoots below 0.3V are not allowed on any pin while in the battery back-up mode. Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
14/24
M48Z35AV
DC and AC parameters
4
DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and AC characteristics of the device. The parameters in the following DC and AC Characteristic tables are derived from tests performed under the Measurement Conditions listed in Table 6: Operating and AC measurement conditions. Designers should check that the operating conditions in their projects match the measurement conditions when using the quoted parameters. Table 6. Operating and AC measurement conditions
Parameter Supply voltage (VCC) Ambient operating temperature (TA) Load capacitance (CL) Input rise and fall times Input pulse voltages Input and output timing ref. voltages M48Z35AV 3.0 to 3.6 0 to 70 50 5 0 to 3 1.5 Unit V C pF ns V V
Note:
Output Hi-Z is defined as the point where data is no longer driven. Figure 10. AC measurement load circuit
DEVICE UNDER TEST
645
CL = 100pF or 5pF
1.75V
CL includes JIG capacitance
AI03211
Note:
50pF for M48Z35AV. Table 7.
Symbol CIN CIO
(3)
Capacitance
Parameter(1)(2) Input capacitance Input / output capacitance Min Max 10 10 Unit pF pF
1. Effective capacitance measured with power supply at 5V. Sampled only, not 100% tested. 2. At 25C, f = 1MHz. 3. Outputs deselected.
15/24
DC and AC parameters Table 8.
Symbol ILI(2) ILO((2) ICC ICC1 ICC2 VIL VIH VOL VOH
M48Z35AV
DC characteristics
Parameter Input leakage current Output leakage current Supply current Supply current (TTL standby) Supply current (CMOS standby) Input low voltage Input high voltage Output low voltage Output high voltage IOL = 2.1mA IOH = 1mA 2.4 Test condition(1) 0V VIN VCC 0V VOUT VCC Outputs open E = VIH E = VCC 0.2V 0.3 2.2 Min Max 1 5 50 3 3 0.8 VCC + 0.3 0.4 Unit A A mA mA mA V V V V
1. Valid for ambient operating temperature: TA = 0 to 70C; VCC = 3.0 to 3.6V (except where noted). 2. Outputs deselected.
Figure 11. Power down/up mode AC waveforms
VCC VPFD (max) VPFD (min) VSO tF tFB tPD INPUTS
RECOGNIZED
tR tRB tDR DON'T CARE trec
RECOGNIZED
HIGH-Z OUTPUTS VALID
(PER CONTROL INPUT)
VALID
(PER CONTROL INPUT)
AI01168C
Table 9.
Symbol tPD tF
(2) (3)
Power down/up AC characteristics
Parameter(1) E or W at VIH before power down VPFD (max) to VPFD (min) VCC fall time VPFD (min) to VSS VCC fall time VPFD (min) to VPFD (max) VCC rise time VSS to VPFD (min) VCC rise time VPFD (max) to inputs recognized Min 0 300 10 10 1 40 200 Max Unit s s s s s ms
tFB
tR tRB trec
1. Valid for ambient operating temperature: TA = 0 to 70C; VCC = 3.0 to 3.6V (except where noted). 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200s after VCC passes VPFD (min). 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
16/24
M48Z35AV Table 10.
Symbol VPFD VSO tDR(3)
DC and AC parameters Power down/up trip points DC characteristics
Parameter(1)(2) Power-fail deselect voltage Battery back-up switchover voltage Expected data retention time 10 Min 2.7 Typ 2.9 VPFD 100mV Max 3.0 Unit V V YEARS
1. All voltages referenced to VSS. 2. Valid for ambient operating temperature: TA = 0 to 70C; VCC = 3.0 to 3.6V (except where noted). 3. At 25C, VCC = 0V.
17/24
Package mechanical data
M48Z35AV
5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Figure 12. PCDIP28 28-pin plastic DIP, battery CAPHATTM, package outline
A2
A
A1 B1 B e3 D
N
L eA
C
e1
E
1 PCDIP
Note:
Drawing is not to scale. Table 11.
Symbol Typ A A1 A2 B B1 C D E e1 e3 eA L N Min 8.89 0.38 8.38 0.38 1.14 0.20 39.37 17.83 2.29 29.72 15.24 3.05 28 Max 9.65 0.76 8.89 0.53 1.78 0.31 39.88 18.34 2.79 36.32 16.00 3.81 Typ Min 0.350 0.015 0.330 0.015 0.045 0.008 1.550 0.702 0.090 1.170 0.600 0.120 28 Max 0.380 0.030 0.350 0.021 0.070 0.012 1.570 0.722 0.110 1.430 0.630 0.150
PMDIP28 28-pin plastic DIP, battery CAPHATTM, pack. mech. data
mm inches
18/24
M48Z35AV
Package mechanical data Figure 13. SOH28 28-lead plastic small outline, battery SNAPHAT, package outline
A2 B e
A C eB CP
D
N
E
H A1 L
1 SOH-A
Note:
Drawing is not to scale. Table 12. SOH28 28-lead plastic small outline, battery SNAPHAT, pack. mech. data
mm Symbol Typ A A1 A2 B C D E e eB H L a N CP 1.27 0.05 2.34 0.36 0.15 17.71 8.23 3.20 11.51 0.41 0 28 0.10 Min Max 3.05 0.36 2.69 0.51 0.32 18.49 8.89 3.61 12.70 1.27 8 0.050 0.002 0.092 0.014 0.006 0.697 0.324 0.126 0.453 0.016 0 28 0.004 Typ Min Max 0.120 0.014 0.106 0.020 0.012 0.728 0.350 0.142 0.500 0.050 8 inches
19/24
Package mechanical data
M48Z35AV
Figure 14. SH 4-pin SNAPHAT housing for 48mAh battery, package outline
A1
A2 A A3
eA D
B eB
L
E
SHZP-A
Note:
Drawing is not to scale. Table 13.
Symbol Typ A A1 A2 A3 B D E eA eB L 0.46 21.21 14.22 15.55 3.20 2.03 6.73 6.48 Min Max 9.78 7.24 6.99 0.38 0.56 21.84 14.99 15.95 3.61 2.29 0.018 0.835 0.560 0.612 0.126 0.080 0.265 0.255 Typ Min Max 0.385 0.285 0.275 0.015 0.022 0.860 0.590 0.628 0.142 0.090
SH 4-pin SNAPHAT housing for 48mAh battery, pack. mech. data
mm inches
20/24
M48Z35AV
Package mechanical data Figure 15. SH 4-pin SNAPHAT housing for 120mAh battery, package outline
A1
A2 A A3
eA D
B eB
L
E
SHZP-A
Note:
Drawing is not to scale. Table 14.
Symb Typ A A1 A2 A3 B D E eA eB L 0.46 21.21 17.27 15.55 3.20 2.03 8.00 7.24 Min Max 10.54 8.51 8.00 0.38 0.56 21.84 18.03 15.95 3.61 2.29 0.018 0.835 0.680 0.612 0.126 0.080 0.315 0.285 Typ Min Max 0.415 0.335 0.315 0.015 0.022 0.860 0.710 0.628 0.142 0.090
SH 4-pin SNAPHAT housing for 120 mAh battery, pack. mech. data
mm inches
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Part numbering
M48Z35AV
6
Part numbering
Table 15.
Example: Device type M48Z Supply voltage and write protect voltage 35AV = VCC = 3.0 to 3.6V; VPFD = 2.7 to 3.0V Speed 10 = 100ns (35AV) Package PC = PCDIP28 MH(1) = SOH28 Temperature range 1 = 0 to 70C Shipping method For SOH28: E = Lead-free package (ECOPACK), tubes F = Lead-free package (ECOPACK), tape & reel For PCDIP28: blank = tubes
1. The SOIC package (SOH28) requires the SNAPHAT battery package which is ordered separately under the part number "M4Zxx-BR00SH1" in plastic tubes (see Table 16).
Ordering information scheme
M48Z 35AV 10 MH 1 E
Caution:
Do not place the SNAPHAT battery package "M4Zxx-BR00SH1" in conductive foam as it will drain the lithium button-cell battery. For other options, or for more information on any aspect of this device, please contact the ST sales office nearest you. Table 16. SNAPHAT battery table
Description Lithium battery (48mAh) SNAPHAT Lithium battery (120mAh) SNAPHAT Package SH SH
Part number M4Z28-BR00SH1 M4Z32-BR00SH1
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M48Z35AV
Revision history
7
Revision history
Table 17.
Date Sep-1999 20-Apr-2000 22-Jun-2001 05-Jul-2001 17-Dec-2001 29-May-2002 03-Oct-2002 07-Nov-2002 02-Apr-2003 24-Mar-2004 09-Jun-2005
Document revision history
Revision 1.0 1.1 2.0 2.1 2.2 2.3 2.4 2.5 3.0 4.0 5 First Issue SH and SH28 packages for 2-pin and 2-socket removed Reformatted; added temperature information (Table 7, 8, 3, 4, 9, 10) Removed reference to "Crystal" in Features Summary Changed speed grade designator to "10" (Table 15) Modified reflow time and temperature footnotes (Table 5) Update VCC for Supply Voltage (Table 5) Update Absolute Maximum Ratings (Table 5) v2.2 template applied; test condition updated (Table 10) Reformatted; updated Lead-free information (Table 5, 15) Removal of SNAPHAT, Industrial temperature sales types (Table 3, 4, 5, 6, 8, 9, 10, 15) Reformatted document; added lead-free second level interconnect information to cover page and Section 5: Package mechanical data; removed M48Z35AY and references throughout document; updated Table 2, 3, 4, 5, 6, 8, 9, 15 and 16. Changes
05-Nov-2007
6
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M48Z35AV
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