SD2931
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
· GOLD METALLIZATION · EXCELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz
M174 epoxy sealed
DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up to 230 MHz.
PIN CONNECTION
4 1
3 1. Drain 2. Source
2 3. Gate 4. Source
ORDER CODES
Order Codes SD2931 Marking SD2931 Package M174 Packaging Plastic Tray
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Symbol V(BR)DSS VDGR VGS ID PDISS Tj T STG Drain Source Voltage Drain-Gate Voltage (RGS = 1M) Gate-Source Volatge Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 125 125 20 20 292 200 -65 to +150 Unit V V V A W C C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 0.6 REV. 4 July 2004 1/10 C/W
SD2931
ELECTRICAL SPECIFICATION (TCASE = 25C) STATIC
Symbol V(BR)DSS IDSS IGSS VGS(Q)* VDS(ON) G FS CISS COSS C RSS
*
Test Conditions VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V IDS = 100 mA VDS = 50 V VDS = 0 V ID = 250 mA ID = 10 A ID = 5 A VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz
Min. 125
Typ.
Max.
Unit V A nA V V mho
50 250 1.5 4.0 3.0 5 480 190 18
pF pF pF
VGS(Q) sorted with alpha/numeric code marked on unit.
DYNAMIC
Symbol POUT G PS D Load Mismatch VDD = 50 V VDD = 50 V VDD = 50 V Test Conditions IDQ = 250 mA IDQ = 250 mA POUT = 150 W IDQ = 250 mA POUT = 150 W f = 175 MHz f = 175 MHz f = 175 MHz f = 175 MHz Min. 150 14 55 10:1 15 65 Typ. Max. Unit W dB % VSWR
VDD = 50 V IDQ = 250 mA POUT = 150 W All Phase Angles
IMPEDANCE DATA
D
VGS SORTS
AA BB
ZDL
1.5 - 1.6 1.6 - 1.7 1.7 - 1.8 1.8 - 1.9 1.9 - 2.0 2.0 - 2.1 2.1 - 2.2 2.2 - 2.3 2.3 - 2.4 2.4 - 2.5 2.5 - 2.6 2.6 - 2.7 2.7 - 2.8
J K L M N P Q R S T U V
2.8 - 2.9 2.9 - 3.0 3.0 - 3.1 3.1 - 3.2 3.2 - 3.3 3.3 - 3.4 3.4 - 3.5 3.5 - 3.6 3.6 - 3.7 3.7 - 3.8 3.8 - 3.9 3.9 - 4.0
CC DD EE A B C D E F G H
Typical Input Impedance
Typical Drain Load Impedance
G Zin
S
FREQ 30 MHz 175 MHz
ZIN () 1.7 - j 5.7 1.2 - j 2.0
ZDL () 6.8 + j 0.9 2.0 + j 2.4
2/10
SD2931
TYPICAL PERFORMANCE
Capacitance vs. Drain-Source Voltage Drain Current vs. Gate Voltage
10000
20
Tc=-20 C
ID, DRAIN CURRENT (A)
C, CAPACITANCE (pF)
f =1MHz
15
Tc=+25 C
1000
Ciss
10
VDS = 10 V
Coss
Tc=+80 C
100
5
Crss
10 0 10 20 30 40 50
0 2 2 .5 3 3 .5 4 4 .5 5 5 .5 6
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Gate-Source Voltage vs. Case Temperature
Maximum Thermal Resistance vs. Case Temperature
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
1.12 1.08 1.04
Id =11A Id =9A Id =10A Id =7A Id =5A
0.72 0.7
RTH(j-c) (C/W)
0.68 0.66 0.64 0.62 0.6 0.58 25 35 45 55 65 75 85
1 0.96 0.92 0.88
Id =4A Id =2A Id =1A
Vds= 10 V
0.84 0.8 -25 0 25
Id =.25A Id =.1A
Tc, CASE TEMPERATURE (C)
100
50
75
Tc, CASE TEMPERATURE (C)
Safe Operating Area
100
Ids (A)
10
(1)
1 1 10 100 1000
Vds (V)
(1) Current in this area may be limited by Rds(on)
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SD2931
TYPICAL PERFORMANCE (175 MHz)
Output Power vs. Input Power Output Power vs. Input Power
270
270
Pout, OUTPUT POWER (W)
240 210 180 150 120 90 60 30 0 0 5 10 15
Pout, OUTPUT POWER (W)
Vdd= 50V Vdd= 40V
240 210 180 150 120 90 60 30 0 0 5 10
Vdd= 50V Idq= 250mA f= 175MHz
Tc =-20 C Tc =+25 C
Tc =+80 C
f= 175MHz Idq= 250mA
20 25
15
20
25
Pin, INPUT POWER (W)
Pin, INPUT POWER(W)
Power Gain vs. Output Power
Efficiency vs. Output Power
18
80 70 60 50 40 30 20 0 50 100 150 200 250 0 50 100 150 200 250
Gp, POWER GAIN (dB)
16 14 12 10 8 6
Vdd=50V Idq=250mA f=175Mhz
Nd, EFFICIENCY (%)
Vdd=50V Idq=250mA f=175Mhz
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
Output Power vs. Supply Voltage
270 240 Pin =10W
Drain Current vs. Gate-Source Voltage
20
Tc=-20 C
Pout,OUTPUT POWER(W)
ID, DRAIN CURRENT (A)
210 180 150 Pin =2.5W 120 90 60 30 0 24 28 32 36 40 44 48 52 Idq= 250mA f= 175MHz Pin =5W
15
Tc=+25 C
10
Tc=+80 C
5
0 2 2 .5 3 3 .5 4 4 .5 5 5 .5 6
Vdd,DRAIN VOLTAGE(V)
VGS, GATE-SOURCE VOLTAGE (V)
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SD2931
175 MHz Test Circuit Schematic (Production Test Circuit)
Note: All dimensions in inches REF. 1021579C
175 MHz Test Circuit Component Part List
T1 T2 FB1 FB2, FB3 FB4 L1 PCB R1, R3 R2 R4 R5 C1, C11 C2 C3, C8, C9 C4 C5 C6 C7 C10 C12, C15 C13, C14,C16, C17 C18 4:1 Transformer, 25 ohm Flexible Coax .090 OD 6" Long 1:4 Transformer, 25 ohm Semi-Rigid Coax .141 OD 6" Long Toroid X 2, 0.5" OD .312" ID 850 2 Turns VK200 Shield Bead, 1" OD 0.5" ID 850 3 Turns 1/4 Wave Choke, 50 ohm Semi-Rigid Coax .141 OD 12" Long 0.62" Woven Fiberglass, 1 oz. Copper, 2 Sides, r = 2.55 470 ohm 1 W Chip Resistor 360 ohm 1/2 W Resistor 20 Kohm 10 Turn Potentiometer 560 ohm 1 W Resistor 470 pF ATC Chip Cap 43 pF ATC Chip Cap Arco 404, 12-65 pF Arco 423, 16-100 pF 120 pF ATC Chip Cap 0.01 F ATC Chip Cap 30 pF ATC Chip Cap 91 pF ATC Chip Cap 1200 pF ATC Chip Cap 0.01 F / 500 V Chip Cap 10 F 63 V Electrolytic Capacitor
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SD2931
175 MHz Test Circuit Photomaster
6.4 inches
175 MHz Test Circuit
6/10
4 inches
SD2931
TYPICAL PERFORMANCE (30 MHz)
Output Power vs. Input Power Power Gain vs. Output Power
Pout, OUTPUT POWER (W)
250
30
Vdd = 50 V
200 150 100 50 0 0 0 .1 0.2 0 .3 0.4 0 .5
PG, POWER GAIN (dB)
29 28 27 26 25 24 0 40 80 120 160 200
Vdd = 40 V f = 30 MHz IDQ = 250 mA
f = 30 MHz VDD = 50 V IDQ = 250 mA
Pin, INPUT POWER (W)
Pout, OUTPUT POWER (W)
Efficiency vs. Output Power
Output Power vs. Supply Voltage
200
70 60
Pin=.31 W Pin=.22 W
Efficiency (%)
150
40 30 20 10 0 0 40 80 120 160 200
Pout(W)
50
100
Pin=.13 W
f = 30 MHz VDD = 50 V IDQ = 250 mA
50
f = 30 MHz IDQ = 250 mA
0 24 28 32 36 40 44 48 52
Pout, OUTPUT POWER (W)
VDD(V)
Output Power vs. Gate Voltage
Pout, OUTPUT POWER (W)
200
T= +25 C T= -20 C
150
100
T= +80 C VDD = 50 V IDQ = 250 mA f = 30 MHz Pin = Constant
0 1 2 3 4 5 6
50
0
VGS GATE-SOURCE VOLTAGE (V)
7/10
SD2931
30 MHz Test Circuit Schematic (Engineering Test Circuit)
30 MHz Test Circuit Component Part List
T1 T2 FB1 FB2 FB3 R FC 1 P CB R1, R3 R2 C1,C4,C6,C7,C8,C9, C11,C12,C13 C2,C3 C5 C10 C14 9:1 Transformer, 25 ohm Flexible Coax with extra shield .090 OD 15" Long 1:4 Transformer, 50 ohm Flexible Coax .225 OD 15" Long Toroid 1.7" OD .30" ID 220 4Turns Surface Mount EMI Shield Bead Toroid 1.7" OD .300" ID 220 3Turns Toroid 0.5" OD 0.30" ID 125 4Turns 12 awg wire 0.62" Woven Fiberglass, 1 oz. Copper, 2 Sides, r = 2.55 1 K ohm 1 W Chip Resistor 680 ohm 3W Wirewound Resistor 0.1 F ATC Chip Cap 750 pF ATC Chip Cap 470 pF ATC Chip Cap 10 F 63 V Electrolytic Capacitor 100 F 63 V Electrolytic Capacitor
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SD2931 M174 (.500 DIA 4/L N/HERM W/FLG) MECHANICAL DATA
mm Inch M AX 5.584 3.18 6.22 18.28 3.18 24.64 12.57 0.08 2.11 3.81 24.89 12.83 0.18 3.00 4.45 7.11 25.53 3.05 26.67 3.30 1.005 0.120 0.970 0.495 0.003 0.083 0.150 6.48 18.54 0.245 0.720 0.125 0.980 0.505 0.007 0.118 0.175 0.280 1.050 0.130 MIN. 0.219 0.125 0.255 0.730 TYP. M AX 0.230
DIM.
A B C D E F G H I J K L M
MIN. 5.56
TYP.
Controlling Dimension in Inches
1011000D
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SD2931
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2004 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com
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