BUL89
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s
s s s
HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC
APPLICATIONS s ELECTRONIC TRANSFORMER FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL89 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. TO-220
3 1 2
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CE S VC EO VEBO IC I CM IB IBM Ptot Tstg Tj Parameter C o ll e c t o r -E m i t t e r Voltage (V B E = 0) C o ll e c t o r -E m i t t e r Voltage (I B = 0) Em it t e r -B a s e Voltage (I C = 0) C o ll e c t o r Current C o ll e c t o r Peak Current (t p < 5 ms) Ba s e Current Ba s e Peak Current (t p < 5 ms) T o t a l Dissipation at T c = 25 o C St o r a g e Temperature M a x . Operating Junction Temperature Value 850 400 9 12 25 6 12 110 - 6 5 to 150 150 U ni t V V V A A A A W
o o
C C
September 2001
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THERMAL DATA
R t h j - c a se T h e r m a l Resistance Junction-Case Max 1 .1 4
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CE S IC EO Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (V B E = 0) C o l l e c t o r Cut-off C u r r e n t (I B = 0) T e s t Conditions V C E = 850 V V C E = 850 V V C E = 400 V I C = 10 mA L = 25 mH 400 T j = 125 o C Min. Typ. Ma x. 10 0 50 0 10 0 Unit A A A V
V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage ( I B = 0) VEBO V C E(s at ) E m i t t e r- B a s e Voltage ( I C = 0) C o l l e c t o r- E m i t te r S a t u r a t io n Voltage B a s e - E m i tt e r S a t u r a t io n Voltage D C Current Gain I N D U C T I V E LOAD S t o r a g e Time F a l l Time I N D U C T I V E LOAD S t o r a g e Time F a l l Time
I E = 10 mA IC = 5 A IC = 8 A I C = 12 A IC = 5 A IC = 8 A IC = 5 A I C = 10 mA IC = 8 A V B E ( o f f ) = -5 V V C L = 350 V ( s e e figure 1) IC = 8 A V B E ( o f f ) = -5 V V C L = 350 V T j = 100 o C IB = 1 A I B = 1.6 A I B = 2.4 A IB = 1 A I B = 1.6 A V CE = 5 V V CE = 5 V I B 1 = 1.6 A RBB = 0 L = 200 H I B 1 = 1.6 A RBB = 0 L = 200 H (see figure 1)
9 1 1.5 5 1.3 1.6 10 10 1.5 55 40
V V V V V V
V B E (s at ) hFE
ts tf
2.3 11 0
s ns
ts tf
1.9 80
s ns
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Derating Curve
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BUL89
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Load Fall Time
Inductive Load Storage Time
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BUL89
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit
1 ) Fast electronic switch 2 ) Non-inductive Resistor 3 ) Fast recovery rectifier
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BUL89
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
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BUL89
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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