BUL38D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s s
s s s s s
STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
3 1 2
TO-220
APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES
s
DESCRIPTION The BUL38D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l V CE S V CE O VEBO IC ICM IB IBM Ptot Tstg Tj P a r am e t e r C o l le c t o r- E m i t te r Voltage (V B E = 0) C o l le c t o r- E m i t te r Voltage (I B = 0) E m i t te r - B as e Voltage (I C = 0) C o l le c t o r Current C o l le c t o r Peak Current (t p <5 ms) B a s e Current B a s e Peak Current (t p <5 ms) T o t a l Dissipation at Tc = 25 C S t o ra g e Temperature M a x . Operating Junction Temperature
o
Va l u e 800 450 9 5 10 2 4 80 - 6 5 to 150 150
U ni t V V V V A A A W
o o
C C
February 2003
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BUL38D
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m al Resistance Junction-Case T h e r m al Resistance Junction-Ambient Max Max 1. 5 6 62 . 5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l I CE S IC EO P a r a m et e r C o l le c t o r Cut-off C u r re n t (V B E = 0) C o l le c t o r Cut-off C u r re n t (I B = 0) T e s t Conditions V C E = 800 V V C E = 800 V V C E = 450 V I C = 100 mA L = 25 mH 450 T c = 125 o C Min. Typ. M a x. 100 500 250 Unit A A A V
V CE O ( s u s ) C o l le c t o r- E m i t te r S u s t ai n i ng Voltage ( I B = 0) VEBO V C E(s at ) E m i t t er - B as e Voltage ( I C = 0) C o l le c t o r- E m i t te r S a t u ra t i on Voltage B a s e -E m i t t er S a t u ra t i on Voltage D C Current Gain
I E = 10 mA IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A I C = 10 mA I C = 0.5 A IC = 2 A G r o up A G r o up B I C = 2.5 A I B 1 = -IB 2 = 0.5 A ( s e e figure 2) IC = 2 A V B E ( o f f ) = -5 V V C L = 250 V ( s e e figure 1) IC = 2 A V B E ( o f f ) = -5 V V C L = 250 V T c = 125 o C IC = 2 A I B = 0.2 A I B = 0.4 A I B = 0.75 A I B = 0.2 A I B = 0.4 A VCE = 5 V V CE = 5 V V CE = 5 V
9 0.5 0.7 1.1 1.1 1.2 10 60 13 22 V C C = 150 V t p = 30 s I B 1 = 0.4 A RBB = 0 L = 200 H I B 1 = 0.4 A RBB = 0 L = 200 H (see figure 1) 1.0 23 32 2.2 0.8 1 55 1.8 100
V V V V V V
V B E (s at ) h FE
ts tf ts tf
R E S I S T IV E LOAD S t o ra g e Time F a l l Time I N D U C T I V E LOAD S t o ra g e Time F a l l Time I N D U C T I V E LOAD S t o ra g e Time F a l l Time D i o d e Forward Voltage
s s s ns
ts tf Vf
1.3 100 1.5
s ns V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
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BUL38D
Safe Operating Area Derating Curve
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
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BUL38D
Inductive Load Storage Time Inductive Load Fall Time
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit.
1 ) Fast electronic switch 2 ) Non-inductive Resistor 3 ) Fast recovery rectifier
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BUL38D
Figure 2: Resistive Load Switching Test Circuit.
1 ) Fast electronic switch 2 ) Non-inductive Resistor
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BUL38D
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
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BUL38D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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